Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| APT6030BVFR_05 | APT6030BVFR | APT6030SVFR | |
|---|---|---|---|
| 描述 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 是否Rohs认证 | - | 不符合 | 不符合 |
| 厂商名称 | - | ADPOW | ADPOW |
| 包装说明 | - | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | - | unknow | unknown |
| 其他特性 | - | AVALANCHE RATED | AVALANCHE RATED |
| 雪崩能效等级（Eas） | - | 1300 mJ | 1300 mJ |
| 外壳连接 | - | DRAIN | DRAIN |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 600 V | 600 V |
| 最大漏极电流 (ID) | - | 21 A | 21 A |
| 最大漏源导通电阻 | - | 0.3 Ω | 0.3 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | - | R-PSFM-T3 | R-PSSO-G2 |
| JESD-609代码 | - | e0 | e0 |
| 元件数量 | - | 1 | 1 |
| 端子数量 | - | 3 | 2 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | FLANGE MOUNT | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | - | 300 W | 298 W |
| 最大脉冲漏极电流 (IDM) | - | 84 A | 84 A |
| 认证状态 | - | Not Qualified | Not Qualified |
| 表面贴装 | - | NO | YES |
| 端子面层 | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | - | THROUGH-HOLE | GULL WING |
| 端子位置 | - | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | SILICON |
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