70HF(R) Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 70 A
FEATURES
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V V
RRM
• Designed and qualified for industrial level
DO-203AB (DO-5)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
70 A
DO-203AB (DO-5)
Single diode
• Converters
• Power supplies
• Machine tool controls
• Battery charges
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
100 to 1200
-65 to 180
TEST CONDITIONS
70HF(R)
10 TO 120
70
T
C
140
110
1200
1250
7100
6450
1400/1600
-65 to 150
140/160
70
110
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
60
70HF(R)
80
100
120
140
160
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
200
300
500
720
960
1200
1440
1650
1900
V
R(BR)
, MINIMUM
AVALANCHE
VOLTAGE
V
200
300
500
725
950
1150
1350
1550
1750
4.5
9
15
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 12-Dec-13
Document Number: 93521
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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70HF(R) Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
=
T
J
maximum
TEST CONDITIONS
180° conduction, half sine wave
70HF(R)
10 TO 120
70
140
110
1200
1250
1000
1050
7100
6450
5000
4550
71 000
0.79
1.00
2.33
m
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 220 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
1.35
1.53
1.46
V
A
2
s
V
A
2
s
A
110
140/160
UNITS
A
°C
A
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
(1)
Lubricated thread, tighting on nut
(1)
Not lubricated thread, tighting on hexagon
(2)
Lubricated thread, tighting on hexagon
(2)
Approximate weight
Case style
Notes
(1)
Recommended for pass-through holes
(2)
Recommended for holed threaded heatsinks
See dimensions - link at the end of datasheet
TEST CONDITIONS
70HF(R)
10 TO 120
-65 to 180
140/160
-65 to 150
UNITS
°C
0.45
K/W
0.25
3.4
(30)
2.3
(20)
4.2
(37)
3.2
(28)
17
0.6
DO-203AB (DO-5)
g
oz.
N·m
(lbf · in)
Maximum allowable mounting
torque (+0 %, -10 %)
Revision: 12-Dec-13
Document Number: 93521
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
70HF(R) Series
www.vishay.com
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.08
0.10
0.13
0.19
0.30
RECTANGULAR CONDUCTION
0.06
0.11
0.14
0.20
0.30
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
180
70HF(R) Series (100V to 1200V)
R
thJC
(DC) = 0.45 K/W
170
150
70HF(R) Series (1400V to 1600V)
R
thJC
(DC) = 0.45 K/W
140
160
Conduction Angle
130
Conduction Angle
150
120
140
60°
30°
130
0
10
20
30
40
90°
110
60°
30°
100
0
10
20
30
40
90°
120°
180°
60
70
80
120°
180°
70
80
50
60
50
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
180
170
160
Conduction Period
150
140
130
Conduction Period
70HF(R) Series (100V to 1200V)
R
thJC
(DC) = 0.45 K/W
70HF(R) Series (1400V to 1600V)
R
thJC
(DC) = 0.45 K/W
150
140
90°
130
30°
120
0
20
40
60
80
100
120
Average Forward Current (A)
60°
120°
180°
DC
120
110
90°
100
30°
90
0
20
40
60
80
100
120
Average Forward Current (A)
60°
120°
180°
DC
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Revision: 12-Dec-13
Document Number: 93521
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
70HF(R) Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
0
80 20 40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
R
th
K/W
0.5
W
K/
0.7
1
1.
5
W
K/
SA
K/
W
K/W
.3
=0
2K
/W
R
elta
-D
3K
/W
4K
/W
5 K/
W
70HF(R) Series
(100V to 1200V)
T = 180°C
J
Fig. 5 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
120
100
80
60
40
20
0
0
20
40
60
80
100
0
120 20 40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
DC
180°
120°
90°
60°
30°
R
th
W
K/
0.5
7
0.
1
SA
W
K/
K/
W
W
K/
.3
=0
1.5
K/
W
2K
/W
aR
elt
-D
RMS Limit
Conduction Period
3K
/W
5 K/W
70HF(R) Series
(100V to 1200V)
T = 180°C
J
Fig. 6 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
0
80
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
R
thS
/W
5K
0.
W
K/
7
0.
1.5
K/
W
2K
/W
3K
/W
4K
/W
70HF(R) Series
(1400V to 1600V)
T
J
= 150°C
5 K/W
Fig. 7 - Forward Power Loss Characteristics
Revision: 12-Dec-13
Document Number: 93521
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1
W
K/
A
K/W
.3
=0
aR
elt
-D
70HF(R) Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
120
100
80
60
RMS Limit
40
20
0
0
20
40
60
80
100
0
120
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Conduction Period
DC
180°
120°
90°
60°
30°
R
th
5
0.
K/
W
0.
7
1
SA
W
K/
=
3
0.
K/
W
W
K/
a
elt
-D
1.5
K/W
2K
/W
3K
/W
R
70HF(R) Series
(1400V to 1600V)
T = 150°C
J
5 K/W
Fig. 8 - Forward Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
1100
1000
900
800
700
600
500
400
300
1
1000
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= T
J
Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
100
T = 25°C
J
10
T = T Max.
J
J
70HF(R) Series
70HF(R) Series
1
0
0.5
1
1.5
2
2.5
3
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 11 - Forward Voltage Drop Characteristics
Peak Half Sine Wave Forward Current (A)
1200
1100
1000
900
800
700
600
500
400
300
200
0.01
Transient Thermal Impedance Z
thJC
(K/W)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= T
J
Max.
No Voltage Reapplied
Rated V
RRM
Reapplied
10
Steady State Value
R thJC = 0.45 K/W
1
(DC Operation)
0.1
0.01
70HF(R) Series
0.001
0.0001
70HF(R) Series
0.1
Pulse Train Duration (s)
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 12 - Thermal Impedance Z
thJC
Characteristics
Revision: 12-Dec-13
Document Number: 93521
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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