SFT8600
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
FEATURES:
•
•
•
•
•
•
•
BVCEO to 400 volts
Very Low Saturation Voltage
Very Low Leakage
High Gain from 20 mA to 250 mA
200° C Operating, Gold Eutectic Die Attach
Superior Performance over JEDEC 2N5010-15 Series
High Speed Switching tf = 0.4µS TYP
1 AMP
1000 Volts
NPN Transistor
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
(RBE = 1K
Ω)
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 100º C
Derate above 25º C
Operating and Storage Temperature
V
CEO
V
CER
V
CBO
V
EBO
I
C
I
B
P
D
Tj, Tstg
R
θJC
400
1000
1000
6
1
100
2.0
2.0
-65 to +200
30
V
V
V
A
A
W
mW/ºC
ºC
ºC/W
Thermal Resistance, Junction to Case
CASE OUTLINE: TO-5
FIGURE 1
OUTLINE AND DIMENSIONS
All dimensions are in inches
Tolerances:
(unless otherwise specified)
XX: ±0.01”
XXX: ±0.005”
Pin 1:
Pin 2:
Pin 3:
Case:
Emitter
Base
Collector
Collector
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0033 G
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT8600
Electrical Characteristic
Symbol
BV
CEO
BV
CER
BV
CBO
BV
EBO
I
CBO
I
CEO
I
EBO
Min
400
1000
1000
6
––
––
––
10
30
40
20
15
––
––
––
––
8.0
––
Max
––
––
––
10
500
10
1
Units
V
V
V
µAdc
µAdc
µAdc
Collector – Emitter Breakdown Voltage
(IC= 10mAdc)
(IC= 20µAdc, RBE = 1KΩ)
Collector–Base Breakdown Voltage
(IC= 20
µAdc)
Emitter–Base Breakdown Voltage
(IE= 20
µAdc)
Collector Cutoff Current
(VCB= 800V)
(VCB= 800V @ TC= 150°)
Collector Cutoff Current
(VCE= 400 Vdc)
Emitter Cutoff Current
(VEB= 4V)
DC Current Gain*
(IC= 100mAdc, VCE= 5Vdc, TC= -55°)
(IC= 5mAdc, VCE= 5Vdc)
(IC= 10mAdc, VCE= 5Vdc)
(IC= 100mAdc, VCE= 5Vdc)
(IC= 250mAdc, VCE= 5Vdc)
Collector – Emitter Saturation Voltage*
(IC= 20mAdc, IB= 2mAdc)
(IC= 100mAdc, IB=10mAdc)
Base – Emitter Saturation Voltage *
(IC= 20mAdc, IB= 2mAdc)
(IC=100mAdc, IB=10mAdc)
Current Gain Bandwidth Product
(IC= 100mAdc, VCE= 10Vdc, f= 10MHz)
Output Capacitance
(VCB= 20Vdc, IE= 0 Adc, f= 1.0MHz)
h
FE
200
––
V
CE(Sat)
0.3
0.5
0.8
1.0
––
15
50
150
3
800
Vdc
V
BE(Sat)
f
T
Vdc
MHz
pF
nsec
nsec
µsec
nsec
Cob
(VCC = 125Vdc,
IC = 100 mAdc,
IB1 = 20 mAdc,
IB2 = 40 mAdc)
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
---
---
* Pulse Test: Pulse Width = 300
µ
S, Duty Cycle = 2%
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
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