200 AMP 100-140 VOLTS NPN TRANSISTOR
| SFT2014 | SFT2010 | SFT2010-3 | SFT2012 | SFT2014/3 | SFT2010/3 | SFT2012/3 | |
|---|---|---|---|---|---|---|---|
| 描述 | 200 AMP 100-140 VOLTS NPN TRANSISTOR | 200 AMP 100-140 VOLTS NPN TRANSISTOR | 200 AMP 100-140 VOLTS NPN TRANSISTOR | 200 AMP 100-140 VOLTS NPN TRANSISTOR | 200 AMP 100-140 VOLTS NPN TRANSISTOR | 200 AMP 100-140 VOLTS NPN TRANSISTOR | 200 AMP 100-140 VOLTS NPN TRANSISTOR |
| 包装说明 | - | FLANGE MOUNT, O-MBFM-P2 | - | FLANGE MOUNT, O-MBFM-P2 | - | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | - | compli | - | compli | - | compli | compli |
| ECCN代码 | - | EAR99 | - | EAR99 | - | EAR99 | EAR99 |
| 其他特性 | - | HIGH RELIABILITY | - | HIGH RELIABILITY | - | HIGH RELIABILITY | HIGH RELIABILITY |
| 最大集电极电流 (IC) | - | 200 A | - | 200 A | - | 200 A | 200 A |
| 集电极-发射极最大电压 | - | 100 V | - | 120 V | - | 100 V | 120 V |
| 配置 | - | SINGLE | - | SINGLE | - | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | - | 5 | - | 5 | - | 5 | 5 |
| JEDEC-95代码 | - | TO-3 | - | TO-3 | - | TO-3 | TO-3 |
| JESD-30 代码 | - | O-MBFM-P2 | - | O-MBFM-P2 | - | O-MBFM-P2 | O-MBFM-P2 |
| 元件数量 | - | 1 | - | 1 | - | 1 | 1 |
| 端子数量 | - | 2 | - | 2 | - | 2 | 2 |
| 最高工作温度 | - | 200 °C | - | 200 °C | - | 200 °C | 200 °C |
| 封装主体材料 | - | METAL | - | METAL | - | METAL | METAL |
| 封装形状 | - | ROUND | - | ROUND | - | ROUND | ROUND |
| 封装形式 | - | FLANGE MOUNT | - | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | - | NPN | - | NPN | - | NPN | NPN |
| 最大功率耗散 (Abs) | - | 600 W | - | 600 W | - | 600 W | 600 W |
| 认证状态 | - | Not Qualified | - | Not Qualified | - | Not Qualified | Not Qualified |
| 表面贴装 | - | NO | - | NO | - | NO | NO |
| 端子形式 | - | PIN/PEG | - | PIN/PEG | - | PIN/PEG | PIN/PEG |
| 端子位置 | - | BOTTOM | - | BOTTOM | - | BOTTOM | BOTTOM |
| 晶体管应用 | - | SWITCHING | - | SWITCHING | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | - | SILICON | - | SILICON | SILICON |
| 标称过渡频率 (fT) | - | 30 MHz | - | 30 MHz | - | 30 MHz | 30 MHz |
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