INTEGRATED CIRCUITS
74LV125
Quad buffer/line driver (3-State)
Product specification
Supersedes data of 1997 Feb 03
IC24 Data Handbook
1998 Apr 28
Philips
Semiconductors
Philips Semiconductors
Product specification
Quad buffer/line driver (3-State)
74LV125
FEATURES
•
Wide operating voltage: 1.0 to 5.5 V
•
Optimized for Low Voltage applications: 1.0 to 3.6 V
•
Accepts TTL input levels between V
CC
= 2.7 V and V
CC
= 3.6 V
•
Typical V
OLP
(output ground bounce) < 0.8 V at V
CC
= 3.3 V,
•
Typical V
OHV
(output V
OH
undershoot) > 2 V at V
CC
= 3.3 V,
•
Output capability: bus driver
•
I
CC
category: MSI
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25°C; t
r
= t
f
≤
2.5 ns
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
PARAMETER
Propagation delay
nA to nY
Input capacitance
Power dissipation capacitance per buffer
T
amb
= 25°C.
T
amb
= 25°C.
DESCRIPTION
The 74LV125 is a low-voltage Si-gate CMOS device and is pin and
function compatible with 74HC/HCT125.
The 74LV125 consists of four non-inverting buffers/line drivers with
3-state outputs. The 3-state outputs (nY) are controlled by the output
enable input (nOE). A HIGH at nOE causes the outputs to assume a
high impedance OFF-state.
CONDITIONS
C
L
= 15 pF;
V
CC
= 3.3 V
V
CC
= 3.3 V;
V
I
= GND to V
CC1
TYPICAL
9
3.5
22
UNIT
ns
pF
pF
NOTE:
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW)
P
D
= C
PD
×
V
CC2
×
f
i
)
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz; C
L
= output load capacitance in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
ORDERING INFORMATION
PACKAGES
14-Pin Plastic DIL
14-Pin Plastic SO
14-Pin Plastic SSOP Type II
14-Pin Plastic TSSOP Type I
TEMPERATURE RANGE
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
OUTSIDE NORTH AMERICA
74LV125 N
74LV125 D
74LV125 DB
74LV125 PW
NORTH AMERICA
74LV125 N
74LV125 D
74LV125 DB
74LV125PW DH
PKG. DWG. #
SOT27-1
SOT108-1
SOT337-1
SOT402-1
PIN DESCRIPTION
PIN
NUMBER
1, 4, 10, 13
2, 5, 9, 12
3, 6, 8, 11
7
14
SYMBOL
1OE – 4OE
1A – 4A
1Y – 4Y
GND
V
CC
NAME AND FUNCTION
FUNCTION TABLE
INPUTS
nOE
Data enable inputs (active LOW)
Data inputs
Data Outputs
Ground (0 V)
Positive supply voltage
L
L
H
NOTES:
H = HIGH voltage level
L = LOW voltage level
X = don’t care
Z = high impedance OFF-state
nA
L
H
X
OUTPUT
nY
L
H
Z
1998 Apr 28
2
853–1901 19290
Philips Semiconductors
Product specification
Quad buffer/line driver (3-State)
74LV125
PIN CONFIGURATION
1OE
1A
1Y
2OE
2A
2Y
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
CC
4OE
4A
4Y
LOGIC SYMBOL (IEEE/IEC)
2
1
3
1
EN1
5
6
4
3OE
3A
3Y
9
8
10
12
11
13
SV00455
LOGIC SYMBOL
2
1A
1Y
3
SV00457
1
5
1OE
2A
2Y
6
4
9
2OE
3A
3Y
8
10
12
3OE
4A
4Y
11
13
4OE
SV00456
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
O
T
amb
Input voltage
Output voltage
Operating ambient temperature range in free air
See DC and AC
characteristics
V
CC
= 1.0V to 2.0V
V
CC
= 2.0V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 3.6V to 5.5V
PARAMETER
DC supply voltage
CONDITIONS
See Note 1
MIN
1.0
0
0
–40
–40
–
–
–
–
–
–
–
–
TYP
3.3
–
–
MAX
5.5
V
CC
V
CC
+85
+125
500
200
100
50
UNIT
V
V
V
°C
t
r
, t
f
Input rise and fall times
ns/V
NOTE:
1. The LV is guaranteed to function down to V
CC
= 1.0V (input levels GND or V
CC
); DC characteristics are guaranteed from V
CC
= 1.2V to V
CC
= 5.5V.
1998 Apr 28
3
Philips Semiconductors
Product specification
Quad buffer/line driver (3-State)
74LV125
ABSOLUTE MAXIMUM RATINGS
1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
"I
IK
"I
OK
"I
O
"I
GND
,
"I
CC
T
stg
P
TOT
PARAMETER
DC supply voltage
DC input diode current
DC output diode current
DC output source or sink current
– bus driver outputs
DC V
CC
or GND current for types with
– bus driver outputs
Storage temperature range
Power dissipation per package
– plastic DIL
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
for temperature range: –40 to +125°C
above +70°C derate linearly with 12 mW/K
above +70°C derate linearly with 8 mW/K
above +60°C derate linearly with 5.5 mW/K
V
I
< –0.5 or V
I
> V
CC
+ 0.5V
V
O
< –0.5 or V
O
> V
CC
+ 0.5V
–0.5V < V
O
< V
CC
+ 0.5V
CONDITIONS
RATING
–0.5 to +7.0
20
50
35
70
–65 to +150
750
500
400
UNIT
V
mA
mA
mA
mA
°C
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, voltages are referenced to GND (ground = 0 V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
V
CC
= 1.2 V
V
IH
HIGH level Input
voltage
V
CC
= 2.0 V
V
CC
= 2.7 to 3.6 V
V
CC
= 4.5 to 5.5 V
V
CC
= 1.2 V
V
IL
LOW level Input
voltage
V
CC
= 2.0 V
V
CC
= 2.7 to 3.6 V
V
CC
= 4.5 to 5.5
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
–I
O
= 100µA
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
–I
O
= 100µA
V
OH
HIGH l
level output
l t t
voltage
out uts
voltage; all outputs
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
–I
O
= 100µA
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
–I
O
= 100µA
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
–I
O
= 100µA
V
OH
HIGH level output
voltage; BUS driver
outputs
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
–I
O
= 8mA
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
–I
O
= 16mA
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
I
O
= 100µA
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
I
O
= 100µA
V
OL
LOW l
level output
l t t
voltage
out uts
voltage; all outputs
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
I
O
= 100µA
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 100µA
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
I
O
= 100µA
V
OL
LOW level output
voltage; BUS driver
outputs
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 8mA
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
I
O
= 16mA
1.8
2.5
2.8
4.3
2.40
3.60
1.2
2.0
2.7
3.0
4.5
2.82
4.20
0
0
0
0
0
0.20
0.35
0.2
0.2
0.2
0.2
0.40
0.55
0.2
0.2
0.2
0.2
0.50
V
0.65
V
1.8
2.5
2.8
4.3
2.20
V
3.50
V
0.9
1.4
2.0
0.7<V
CC
0.3
0.6
0.8
0.3<V
CC
-40°C to +85°C
TYP
1
MAX
-40°C to +125°C
MIN
0.9
1.4
2.0
0.7<V
CC
0.3
0.6
0.8
0.3<V
CC
V
V
MAX
UNIT
1998 Apr 28
4
Philips Semiconductors
Product specification
Quad buffer/line driver (3-State)
74LV125
DC ELECTRICAL CHARACTERISTICS (Continued)
Over recommended operating conditions, voltages are referenced to GND (ground = 0 V)
LIMITS
SYMBOL
PARAMETER
Input leakage
current
3-State output
OFF-state current
Quiescent supply
current; MSI
Additional
quiescent supply
current per input
TEST CONDITIONS
MIN
I
I
I
OZ
I
CC
∆I
CC
V
CC
= 5.5 V; V
I
= V
CC
or GND
V
CC
= 5.5 V; V
I
= V
IH
or V
IL;
V
O
= V
CC
or GND
V
CC
= 5.5 V; V
I
= V
CC
or GND; I
O
= 0
V
CC
= 2.7 V to 3.6 V; V
I
= V
CC
– 0.6 V
-40°C to +85°C
TYP
1
MAX
1.0
5
20.0
500
-40°C to +125°C
MIN
MAX
1.0
10
160
850
µA
µA
µA
µA
UNIT
NOTE:
1. All typical values are measured at T
amb
= 25°C.
AC CHARACTERISTICS
GND = 0V; t
r
= t
f
≤
2.5ns; C
L
= 50pF; R
L
= 1KΩ
SYMBOL
PARAMETER
WAVEFORM
CONDITION
V
CC
(V)
1.2
2.0
t
PHL/
t
PLH
Propagation delay
nA to nY
Figures 1, 2
2.7
3.0 to 3.6
4.5 to 5.5
1.2
t
PZH/
t
PZL
3 State out ut
3-State output
enable time
OE to Y
nOE t nY
2.0
Figures 2, 3
2.7
3.0 to 3.6
4.5 to 5.5
1.2
t
PHZ/
t
PLZ
3 State out ut
3-State output
disable time
nOE t nY
OE to Y
2.0
Figures 2, 3
2.7
3.0 to 3.6
4.5 to 5.5
NOTES:
1. Unless otherwise stated, all typical values are measured at T
amb
= 25°C
2. Typical values are measured at V
CC
= 3.3 V.
65
24
18
14
2
32
24
20
17
39
29
24
21
ns
75
26
19
14
2
31
23
18
15
39
29
23
19
ns
MIN
LIMITS
–40 to +85
°C
TYP
1
55
19
14
10
2
24
18
14
12
31
23
18
15
ns
MAX
–40 to +125
°C
MIN
MAX
UNIT
1998 Apr 28
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
