Operating Temperature Range ......................... -40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(V
L
= +2.7V to +5.5V, BAT = +6V to +26V,
SD
= V
L
, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at V
L
= +3.3V,
BAT = +14V, T
A
= +25°C) (Note 1)
PARAMETER
POWER SUPPLY
V
L
Supply Range
V
L
Supply Current
BAT Supply Range
V
L
I
L
V
BAT
V
L
= +5V, V
BAT
= +14V, continuous
scan, programmable hysteresis off,
M0 = M1 =1, WEND = 1, IN0–IN7 =
unconnected,
CS
= V
L
, SDI = CLK = GND (Note 2)
V
BAT
= +14V, scan mode (SC0 = 0,
SC1= 0, SC2 = 0),
CS
= V
L
,
SDI = CLK = GND (Note 2)
V
SD
= 0V,
V
BAT
= +14V,
V
BATREF
=
+14V (Note 2)
T
A
= +25°C
T
A
= -40°C to +125°C
V
L
= +5.5V, V
BAT
= +14V
6
2.7
0
5.5
1
26
V
µA
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Total Supply Current
I
SUP
46
80
µA
Total Supply Current in Scan
Mode
I
SUP_SCAN
17
2
2
36
3.2
µA
Total Supply Current in Shutdown
Mode
BATREF Input Leakage Current in
Shutdown
BATREF Input Resistance
SWITCH INPUTS (IN0–IN7)
Input-Voltage Threshold Center
(Note 3)
I
SHDN
µA
4.0
1
1
0.425 x
0.4 x
0.5 x
0.5 x
0.575 x
0.63 x
0.22 x
0.48 x
µA
MΩ
I
L_BATREF
R
BATREF
V
SD
= 0V, V
BATREF
= +14V
V
BATREF
= +14V
R
HYST
= ∞ or programmable hysteresis
disabled
R
HYST
= 90kΩ
R
HYST
= ∞ or programmable hysteresis
disabled
V
TH_C
V
BATREF
V
BATREF
V
BATREF
V
BATREF
V
BATREF
V
BATREF
V
BATREF
V
BATREF
V
BATREF
V
BATREF
V
BATREF
V
BATREF
V
BATREF
0.5 x
0.26 x
0.361 x
0.133 x
0.166 x
V
Input-Voltage Threshold
Hysteresis (Note 4)
V
TH_HYS
R
HYST
= 90kΩ
R
HYST
= 0Ω
V
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Maxim Integrated
│
2
MAX13036
Contact Monitor and Level Shifter
Electrical Characteristics (continued)
(V
L
= +2.7V to +5.5V, BAT = +6V to +26V,
SD
= V
L
, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at V
L
= +3.3V,
BAT = +14V, T
A
= +25°C) (Note 1)
PARAMETER
Switch-State Sense Resistor
Wetting Current Rise/Fall Time
SYMBOL
R
SENSE
I
WET_RISE_
FALL
CONDITIONS
R
WET
= 61kΩ
(Note 5)
R
WET
= 61kΩ
Rise
Fall
MIN
11
TYP
16
6
1
22
MAX
22
UNITS
kΩ
µs
Wetting Current
IN0–IN7 Input Impedance in
Shutdown
LOGIC-LEVELS
SDO, DO0, DO1 Output
Voltage High
SDO, DO0, DO1 Output
Voltage Low
INT, OT
Output Voltage Low
SD
Input Leakage Current
SD
Input-Voltage Low
SD
Input-Voltage High
CS,
CLK, SDI Input-Voltage Low
CS,
CLK, SDI Input-Voltage High
CS,
CLK Input Leakage Current
INT, OT
Leakage Current
SDI Input Impedance
THERMAL SHUTDOWN
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
IWET
R
WET
= 30kΩ, VBAT = 14V
R
WET
= 330kΩ
V
SD
= 0V, V
IN_
= +14V
28
40
7.5
51
mA
5.5
8.5
MΩ
V
OH
V
OL
V
INTL
I
L_
SD
V
IL_SD
V
IH_
SD
V
IL
V
IH
I
IL
I
OL
R
SDI
T
SHDN
T
HYST
Source current = 2mA
Sink current = 4mA
Sink current = 4mA
V
SD
= V
BAT
= +12V
0.8 x V
L
0.2 x V
L
0.4
15
2.4
0.33 x V
L
0.66 x V
L
-1
-1
65
100
+170
15
+1
+1
145
30
0.8
V
V
V
µA
V
V
V
V
µA
µA
kΩ
°C
°C
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Maxim Integrated
│
3
MAX13036
Contact Monitor and Level Shifter
Timing Characteristics
(V
L
= +2.7V to +5.5V, BAT = +6V to +26V,
SD
= V
L
, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at V
L
= +3.3V,
BAT = +14V, T
A
= +25°C) (Note 1)
PARAMETER
IN0 to DO0 Propagation Delay
IN1 to DO1 Propagation Delay
CLK Frequency
Falling Edge of
CS
to Rising Edge
of CLK Required Setup Time
Falling Edge of CLK to Rising
Edge of
CS
Required Setup Time
SDI Valid to Falling Edge of CLK
Required Setup Time
Falling Edge of CLK to SDI
Required Hold Time
Time From Falling Edge of
CS
to
SDO Low Impedance
Time From Rising Edge of
CS
to
SDO High Impedance
Time from Rising Edge of CLK to
SDO Data Valid
Debounce time
Scanning Time Pulse
Scanning Time Period
Wetting Time Pulse
Time from Shutdown To Normal
Operation
SYMBOL
t
PROP
f
CLK
t
LEAD
t
LAG
t
SI(SU)
t
SI(HOLD)
t
SO(EN)
t
SO(DIS)
t
VALID
t
DEB
t
SCAN
t
SCAN_P
t
WET
SC2 = 0, SC1 = 1, SC0 = 1
WTOFF = 0
SD
low-to-high transition to input
monitoring enabled
V
BAT
= 6V
V
BAT
= +14V
Input rise/fall time < 2ns,
V
L
= +3.0V to +5.5V
Input rise/fall time < 2ns,
V
L
= +3.0V to +5.5V, Figure 1
Input rise/fall time < 2ns,
V
L
= +3.0V to +5.5V, Figure 1
Input rise/fall time < 2ns,
V
L
= +3.0V to +5.5V, Figure 1
Input rise/fall time < 2ns,
V
L
= +3.0V to +5.5V, Figure 1
Input rise/fall time < 2ns,
V
L
= +3.0V to +5.5V, Figure 1
V
L
= +3.0V to +5.5V, Figures 1 and 2
CSDO =15pF,
V
L
= +3.0V to +5.5V, Figure 1
C
TDEB
= 500pF
C
TDEB
= 10nF (Note 6)
3.18
63
130
4
10
5.9
120
250
8
21
200
110
50
30
20
55
55
70
9.42
188
400
14
35
CONDITIONS
MIN
TYP
22
22
5
MAX
35
UNITS
µs
MHz
ns
ns
ns
ns
ns
ns
ns
ms
µs
ms
ms
µs
Note 1:
All units are 100% production tested at T
A
= +125°C. Limits over the operating temperature range are guaranteed by cor-
relation to the +125°C tests.
Note 2:
The total supply current is the sum of the current flowing into V
L
, BAT, and BATREF.
Note 3:
V
TH_C
= (V
TH_HIGH
+ V
TH_LOW
)/2.
Note 4:
V
TH_HYS
= (V
TH_HIGH
- V
TH_LOW
).
Note 5:
Wetting current rise/fall time is measured as the time from 10% to 90% of the maximum wetting current.
Note 6:
Guaranteed by design.
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Maxim Integrated
│
4
MAX13036
Contact Monitor and Level Shifter
Test Circuits/Timing Diagrams
CS
t
LEAD
CLK
t
SI(SU)
SDI
t
SO(EN)
SDO
MSB OUT
t
SI(HOLD)
t
LAG
MSB IN
t
VALID
LSB OUT
t
SO(DIS)
Figure 1. SPI Timing Characteristics
V
L
CS
t
SO(EN)
15pF
SDO
t
SO(DIS)
MAX13036
CS
SDO
1kΩ
1/3V
L
V
OL
+ 0.1V
L
Figure 2. SDO Enable/Disable Test Circuit and Timing Diagram
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