PD-96991
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level R
DS(on)
IRHMS67264 100K Rads (Si) 0.041Ω
IRHMS63264 300K Rads (Si) 0.041Ω
I
D
45A
45A
IRHMS67264
250V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm
2
).
Their combination of very low
RDS(on)
and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Low-Ohmic
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
45
28.5
180
208
1.67
±20
251
45
20.8
4.4
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
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1
06/28/05
IRHMS67264
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
250
—
—
2.0
37
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.31
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.041
4.0
—
10
25
100
-100
220
50
70
35
70
80
15
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 28.5A
Ã
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 28.5A
Ã
VDS = 200V ,VGS = 0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A
VDS = 125V
VDD = 125V, ID = 45A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
6847
933
12
0.48
—
—
—
—
pF
Ω
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
45
180
1.2
700
14.3
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 45A, VGS = 0V
Ã
Tj = 25°C, IF = 45A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.60
0.21 —
—
48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS67264
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Sourcee On-State
Resistance (Low Ohmic TO-254AA)
Diode Forward Voltage
Up to 300K Rads (Si)
Min
250
2.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 200V, V
GS
= 0V
V
GS
= 12V, I
D
= 28.5A
V
GS
= 12V, I
D
= 28.5A
V
GS
= 0V, I
D
= 45A
—
4.0
100
-100
10
0.041
0.041
1.2
Part numbers IRHMS67264 and IRHMS63264
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
(MeV/(mg/cm2))
Ag
Xe
Au
43
59
90
Energy
(MeV)
1217
823
1480
Range
(µm)
112
66
80
@VGS =
@VGS =
VDS (V)
@VGS =
@VGS =
@VGS =
@VGS =
0V
250
250
75
-5V
250
250
75
-10V
250
250
-
-15V
250
50
-
-17V
100
-
-
-20V
50
-
-
300
250
200
150
100
50
0
0
-5
-10
VGS
-15
-20
VDS
Ag
Xe
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS67264
Pre-Irradiation
1000
TOP
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
10
5.0V
5.0V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
10
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 45A
2.5
ID, Drain-to-Source Current (A)
2.0
T J = 150°C
100
T J = 25°C
1.5
1.0
10
5
5.5
6
VDS = 50V
15
60µs PULSE WIDTH
6.5
7
7.5
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHMS67264
14000
12000
10000
8000
6000
4000
2000
0
1
VGS, Gate-to-Source Voltage (V)
100KHz
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID = 45A
16
VDS = 200V
VDS = 125V
VDS = 50V
C, Capacitance (pF)
Ciss
Coss
12
8
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
50
100
150
200
250
10
100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
100
10
100µs
1ms
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
10ms
0.1
1000
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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