Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT5553A/G
Series
5 AMP
100 Volts
PNP Power Transistor
Features:
•
BV
CEO
80V
•
Fast Switching
•
Very High Gain
•
Low Saturation Voltage
•
200 ºC Operating Temperature
•
Gold Eutectic Die Attach
•
TX, TXV, S-Level Screening Available
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFT5553A __ __ __
│ │ └
Scre
ening
2/
__
= Not Screen
│ │
TX = TX Level
│ │
TXV = TXV Level
│ │
S = S Level
│ │
│ └
Polarity __
= Normal
│
R = Reverse
│
└
Package
/G = Cerpack
Maximum Ratings
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
Power Dissipation @ T
C
≤
100ºC
Derate above 100ºC
Operating & Storage Temperature
Thermal Resistance,
Junction to Case
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
I
B
P
D
Top & Tstg
R
θJC
Value
100
80
6.0
5.0
2.0
40
0.4
-65 to +200
1.8
Units
Volts
Volts
Volts
Amps
Amps
W
W/ ºC
ºC
ºC/W
Cerpack Outline:
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0015E
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT5553A/G
Series
Symbol
I
C
= 100 µA
DC
I
C
= 100 µA
DC
I
E
= 20 µA
DC
V
EB
= 5 V
DC
V
CB
= 100 V
DC
V
CE
= 80 V
DC
V
CE
= 1.1V
DC
, I
C
= 1.0A
DC
V
CE
= 1.32V
DC
, I
C
= 2.5A
DC
V
CE
= 2.2V
DC
, I
C
= 5.0A
DC
I
C
= 2.5A
DC
, I
B
= 0.2A
DC
I
C
= 2.5A
DC
, I
B
= 0.2A
DC
I
C
= 2.5A
DC
, V
CE
= 1.3V
DC
I
C
= 50mA
DC
, V
CE
= 10V
DC
, f = 20MHz
V
CB
= 30V
DC
, I
E
= 0A
DC
, f = 1.0MHz
V
CC
= 200V
DC
, I
C
= 1.0A
DC
,
I
B1
= I
B2
= 100mA
DC
, R
B1
= R
B2
= 40Ω
BV
CEO
BV
CBO
BV
EBO
I
EBO
I
CBO
I
CEO
H
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
c
ob
t
(on)
t
(off)
Electrical Characteristics
3/
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Emitter – Cutoff Current
Collector – Cutoff Current
Collector – Cutoff Current
DC Current Gain *
Min
80
100
6
––
––
––
80
55
25
––
––
––
40
––
––
––
Max
––
––
––
10
10
100
220
150
120
0.5
1.1
0.95
––
120
200
1500
Units
Volts
Volts
Volts
µA
µA
µA
––
V
DC
V
DC
V
DC
MHz
pF
nsec
nsec
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Base – Emitter On Voltage *
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Turn Off Time
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
Available Part Numbers:
SFT5553A/G
SFT5553A/GR
Code
---
R
PIN ASSIGNMENT (Standard)
Function
Base
PIN 1
Collector
Emitter
Normal
Collector
Base
Reverse
PIN 2
Base
Emitter
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0015E
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
