PRELIMINARY
SFT4959
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
Designer's Data Sheet
FEATURES:
•
•
•
•
PNP Silicon Annular Transistor
High Speed
High Frequency
Low Noise
30mA
18 VOLTS
PNP TRANSISTOR
TO-72
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TC=100
o
C
Derate above 100
o
C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J,
T
STG
R
2JC
VALUE
18
25
3
30
.2
1.14
-65 to +200
.87
UNITS
Volts
Volts
Volts
mA
W
mW/
o
C
o
C
o
C/mW
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0001A
PRELIMINARY
SFT4959
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
SOLID STATE DEVICES, INC.
MIN
18
25
3
-
20
1000
-
MAX
-
-
-
0.1
200
-
0.8
MHz
pF
UNITS
V
V
V
uA
Electrical Characteristics *
Collector-Emitter Breakdown Voltage
(I
C
=1mAdc)
Collector-Base Breakdown Voltage
(I
C
=0.1mAdc)
Emitter-Base Breakdown Voltage
(I
E
=0.1mAdc)
Collector Cutoff Current
(V
CB
=10Vdc)
Forward Current Transfer Ratio
(I
C
=2mA, V
CE
=10Vdc)
Current Gain Bandwidth Product
(I
C
=10mA, V
CE
=10Vdc
,
f =100 MHz)
Collector-Base Capacitance
(V
CB
=10 Vdc
,
I
E
=0
,
f =1 MHz )
*T
J
= 25
o
C (Unless Otherwise Specified)
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CBO
h
FE
fT
Cob
CASE OUTLINE: TO-72
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
PIN 4: CASE
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