Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT501 and SFT503
Series
5 AMP
200 Volts
HIGH SPEED
PNP Transistor
Features:
•
•
•
•
•
•
•
•
•
Radiation Tolerant
Fast Switching
High Frequency, 50 MHz Typical
BVCEO 150 Volts Min
High Linear Gain
Very Low Leakage and Saturation
200ºC Operating Temperature
Gold Eutectic Die Attach
Designed for Complementary Use with SFT502 and
SFT504
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFT501 __ __
SFT503 __ __
¦ + Scre
ening
2/
__
= Not Screen
¦
TX = TX Level
¦
TXV = TXV Level
¦
S
= S Level
¦
+
Package
3/
__
= TO-5
1/
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continues Collector Current
Base Current
Power Dissipation
@ TC = 50ºC
Derate above 50ºC
Operating & Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
Top & Tstg
Junction to Case
R
?JC
Value
150
200
7
5
1
10
66.6
-65 to +200
15
Units
Volts
Volts
Volts
Amps
Amps
W
mW/ºC
ºC
ºC/W
Maximum Thermal Resistance
TO-5
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
B17BH
DATA SHEET #: TR0040C
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT501 and SFT503
Series
Electrical Characteristic
4/
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cutoff Current
Collector – Cutoff Current
Emitter – Cutoff Current
DC Current Gain *
SFT501
I
C
= 50mA
I
C
= 200µA
I
E
= 200µA
V
CE
= 100 V
V
CB
= 100 V
V
EB
= 6 V
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 2.5A
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 2.5A
V
CE
= 5V, I
C
= 5A
I
C
= 2.5A, I
B
= 250mA
I
C
= 5.0A, I
B
= 500mA
I
C
= 2.5A, I
B
= 250mA
I
C
= 5.0A, I
B
= 500mA
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
V
CB
= 10V, I
E
= 0A, f = 1MHz
V
BE
= 10V, I
C
= 0A, f = 1MHz
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CEO
I
CBO
I
EBO
Min
150
200
7
––
––
––
20
30
20
50
50
40
––
––
––
––
40
––
––
––
––
––
––
Typ
200
275
13
––
––
––
––
––
70
––
––
70
0.35
0.6
1.0
1.2
55
130
450
25
40
320
130
Max
––
––
––
1.0
500
500
––
––
––
––
––
––
0.75
1.5
1.3
1.5
––
225
600
50
250
600
300
Units
Volts
Volts
Volts
µA
nA
nA
SFT503
h
FE
––
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(Sat)
V
BE(Sat)
f
T
c
ob
C
ib
t
d
Volts
Volts
MHz
pF
pF
nsec
nsec
nsec
nsec
V
CC
= 50V,
I
C
= 5A,
I
B1
= I
B2
= 0.5A
t
r
t
S
t
f
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
Available Part Numbers:
SFT501
SFT503
Package
TO-5
PIN ASSIGNMENT
Pin 1
Emitter
Pin 2
Base
Pin 3 (Case)
Collector
单片机
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