Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT3906A2
Series
Dual Microminiature Package
800 mA 75 Volts
Dual PNP Transistor
Features:
•
•
•
•
•
•
High Speed Switching Transistor
Multiple Devices Reduce Board Space
High Power Dissipation: Up to 600 mW / device
Replacement for 2N3904AU
TX, TXV, S-Level screening available
NPN complimentary parts available (SFT3904A2)
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFT3906A2
__ __
Scre
ening
2/
__
= Commercial
TX = TX Level
TXV = TXV Level
S = S Level
Package
GW = Gullwing
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continues Collector Current
Power Dissipation @ TC = 25ºC
Operating & Storage Temperature
V
CEO
V
CBO
V
CBO
I
C
P
D
Top & Tstg
R
èJC
40
40
6
200
600
-65 to +200
0.29
Volts
Volts
Volts
mAmps
mW
ºC
ºC/mW
Maximum Thermal Resistance
(Junction to Case)
Gullwing (GW)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0038 A
Doc
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT3906A2
Series
Symbol
Min
Max
Units
Electrical Characteristic
4/
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Transfer Ratio
*
I
C
= 1 mA
I
C
= 10 µA
I
C
= 10 µA
Vce = -30 V, Vbe = 3.0 V
Vcb = -30 V
Veb = -3.0 V
V
CE
= -1.0V, I
C
= 0.1 mA
V
CE
= -1.0V, I
C
= 1.0 mA
V
CE
= -1.0V, I
C
= 10 mA
V
CE
= -1.0V, I
C
= 50 mA
V
CE
= -1.0V, I
C
= 100 mA
BV
CEO
BV
CBO
BV
EBO
I
CEX
I
CBO
I
EBO
-40
-40
-5
––
––
––
60
80
100
60
30
––
––
-0.65
––
250
––
––
––
––
––
––
100
––
––
––
––
50
50
50
––
––
300
––
––
-0.25
-0.40
-0.85
-0.95
––
4.5
10
35
35
225
75
400
4.0
Volts
Volts
Volts
nA
nA
nA
H
FE
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Frequency Transition
Output Capacitance
Input Capacitance
Turn-on Delay Time
Rise Time
Switch Times
Storage Time
Fall Time
Small Signal Current Gain
(f = 1 khz )
Noise Figure
I
C
= 10mA, I
B
= 1.0mA
V
CE(Sat)
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
V
BE(Sat)
I
C
= 50mA, I
B
= 5.0mA
V
CE
= -20V, I
C
= 20mA
V
CE
= -10V, f = 1MHz
V
CE
= -0.5V, f = 1MHz
Vcc=-3V, IC = 10 mA
IB1 = 1mA, IB2=-1mA
Vbe(off) = 0.5 V
V
CE
= -10V, I
C
= 1.0 mA
f
T
c
ob
c
ib
td
tr
ts
tf
h
fe
NF
Volts
Volts
MHz
pF
pF
n sec
Ic = 100 uA, Vce = -5 V, Rs = 1.0 kÙ, f = 1 khz
db
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact
Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics
@25ºC.
PIN ASSIGNMENT
Pin 2
Pin 3
Pin 4
Base1
Emitter1 Collector2
Available Part Numbers:
SFT3906A2GW
Package
GW
Pin 1
Collector1
Pin 5
Base2
Pin 6
Emitter2
PCB设计
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