Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT390604A2
Series
Dual Microminiature Package
800 mA 75 Volts
NPN/PNP Transistor
Features:
•
•
•
•
•
High Speed Switching Transistor
Multiple Devices Reduce Board Space
High Power Dissipation: Up to 600 mW / device
TX, TXV, S-Level screening available
Replaces both 2N3906AU (PNP) &
2N3904AU(NPN) in one package
PNP
Value
NPN
Value
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFT390604A2
__ __
│ └
Scre
ening
2/
__
= Commercial
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
└
Package
GW = Gullwing
Maximum Ratings (per device)
Symbol
Units
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continues Collector Current
Power Dissipation @ TC = 25ºC
Operating & Storage Temperature
V
CEO
V
CBO
V
CBO
I
C
P
D
Top & Tstg
R
θJC
40
40
6
200
600
-65 to +200
0.29
40
60
6
200
600
-65 to +200
0.29
Volts
Volts
Volts
mAmps
mW
ºC
ºC/mW
Maximum Thermal Resistance
(Junction to Case)
Gullwing (GW)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0036 B
Doc
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT390604A2
Series
Symbol
PNP
Limit
NPN
Limit
Units
Electrical Characteristic
4/ 5/
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Transfer Ratio
*
I
C
= 1 mA
I
C
= 10 µA
I
C
= 10 µA
Vce = 30 V, Vbe = 3.0 V
Vcb = -30 V
Veb = -3.0 V
V
CE
= 1.0V, I
C
= 0.1 mA
V
CE
= 1.0V, I
C
= 1.0 mA
V
CE
= 1.0V, I
C
= 10 mA
V
CE
= 1.0V, I
C
= 50 mA
V
CE
= 1.0V, I
C
= 100 mA
BV
CEO
BV
CBO
BV
EBO
I
CEX
I
CBO
I
EBO
40 min
40 min
5 min
50 max
50 max
50 max
60 min
80 min
100 - 300
60 min
30 min
40 min
60 min
5 min
50 max
50 max
50 max
40 min
70 min
100 - 300
60 min
30 min
V
V
V
nA
nA
nA
H
FE
Collector – Emitter Saturation Voltage *
Base – Emitter Saturation Voltage *
Frequency Transition
Output Capacitance
Input Capacitance
Turn-on Delay Time
Rise Time
Switch Times
Storage Time
Fall Time
Small Signal Current Gain
(f = 1 khz )
Noise Figure
I
C
= 10mA, I
B
= 1.0mA
V
CE(Sat)
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
V
BE(Sat)
I
C
= 50mA, I
B
= 5.0mA
V
CE
= 20V, I
C
= 20mA
V
CE
= 10V, f = 1MHz
V
CE
= 0.5V, f = 1MHz
Vcc=3V, IC = 10 mA
IB1 = 1mA, IB2=-1mA
Vbe(off) = 0.5 V
V
CE
= 10V, I
C
= 1.0 mA
f
T
c
ob
c
ib
td
tr
ts
tf
h
fe
NF
0.25 max
0.20 max
0.40 max
0.30 max
0.65 to 0.85 0.65 to 0.85
0.95 max
0.95 max
250 min
4.5 max
10 max
35 max
35 max
225 max
75 max
100 - 400
4.0 max
300 min
4.0 max
8.0 max
35 max
35 max
200 max
50 max
100 - 400
5.0 max
V
V
MHz
pF
pF
nsec
Ic = 100 uA, Vce = 5 V, Rs = 1.0 kΩ, f = 1 khz
db
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability
Contact Factory.
2/ Screening per MIL-PRF-19500
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
5/ Negative bias conditions for the PNP device type
PIN ASSIGNMENT
Pin 2
Pin 3
Pin 4
PNP Device
Base
Emitter
Collector
Available Part Numbers:
SFT390604A2GW
Package
GW
Pin 1
Collector
Pin 5
NPN Device
Base
Pin 6
Emitter
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