Datasheet> 器件分类 > 半导体> 模拟混合信号IC> 5962F9953602VXC

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5962F9953602VXC: 产品描述1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16; 产品类别半导体模拟混合信号IC; 文件大小49KB，共2页; 制造商Intersil ( Renesas ); 官网地址http://www.intersil.com/cda/home/

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5962F9953602VXC概述

1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16

5962F9953602VXC规格参数

参数名称	属性值
功能数量	1
端子数量	16
最小工作温度	-55 Cel
最大工作温度	125 Cel
加工封装描述	CERAMIC, DFP-16
each_compli	Yes
状态	Active
接口类型	HALF BRIDGE BASED MOSFET DRIVER
高端驱动器	YES
jesd_30_code	R-CDFP-F16
jesd_609_code	e0
moisture_sensitivity_level	NOT APPLICABLE
额定输出峰值电流限制	1.5 A
包装材料	CERAMIC, METAL-SEALED COFIRED
ckage_code	DFP
ckage_equivalence_code	FL16,.3
包装形状	RECTANGULAR
包装尺寸	FLATPACK
eak_reflow_temperature__cel_	NOT SPECIFIED
wer_supplies__v_	12/20
qualification_status	COMMERCIAL
seated_height_max	2.92 mm
sub_category	MOSFET Drivers
最小供电电压	12 V
最大供电电压	20 V
表面贴装	YES
工艺	BIPOLAR
温度等级	MILITARY
端子涂层	NOT SPECIFIED
端子形式	FLAT
端子间距	1.27 mm
端子位置	DUAL
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
l_dose	300k Rad(Si)
width	6.73 mm

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IS-2100ARH 为高性能辐射硬化半桥驱动器，优化于高频操作环境。其设计基于独立控制的低侧和高侧栅极驱动器，允许用户自定义死区时间与驱动策略，提升系统设计的适应性。该器件在 130V 电压下运作，结构上采用辐射加固硅栅和介质隔离技术，以应对极端辐射条件。关键特性包括片上错误检测机制，通过实时比较 HIN 信号与高侧锁存器状态，自动生成纠正脉冲来抵御单事件扰动。辐射耐受指标为最大 300krad(SI) 总剂量、闭锁免疫 DI RSG 工艺、82MeV/mg/cm² SEU 等级，以及垂直架构减少低剂量率影响。驱动能力方面，可在 1MHz 频率下处理 1000pF 负载，典型上升/下降时间为 30ns，峰值输出电流达 1.5A，直流功耗仅 60mW。工作电压范围覆盖 12V 至 20V（VDD=VCC），并集成低侧欠压保护，引导电源支持最高 150V。该驱动器适用于高频开关电源、电感负载驱动和 DC 电机控制系统。器件遵循 DSCC 规范，订购时需使用指定 SMD 编号，确保在军事和航天领域的合规性与可靠性。

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IS-2100ARH

Data Sheet

April 2003

FN9037.1

Radiation Hardened High Frequency

Half Bridge Driver

The Radiation Hardened IS-2100ARH is a high frequency,

130V Half Bridge N-Channel MOSFET Driver IC, which is

functionally similar to industry standard 2110 types. The low-

side and high-side gate drivers are independently controlled.

This gives the user maximum flexibility in dead-time

selection and driver protocol.

In addition, the device has on-chip error detection and

correction circuitry, which monitors the state of the high-side

latch and compares it to the HIN signal. If they disagree, a

set or reset pulse is generated to correct the high-side latch.

This feature protects the high-side latch from single event

upsets (SEUs).

Specifications for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Detailed Electrical Specifications for the IS-2100ARH are

contained in SMD 5962-99536. A “hotlink” is provided

on our website for downloading.

Features

• Electrically Screened to DSCC SMD # 5962-99536

• QML Qualified per MIL-PRF-38535 Requirements

• Radiation Environment

- Maximum Total Dose . . . . . . . . . . . . . . . . . 300krad(SI)

- DI RSG Process Provides Latch-up Immunity

- SEU Rating. . . . . . . . . . . . . . . . . . . . . . 82MeV/mg/cm

- Vertical Device Architecture Reduces Sensitivity to Low

Dose Rates

• Bootstrap Supply Max Voltage to 150V

• Drives 1000pF Load at 1MHz with Rise and Fall Times of

30ns (Typ)

• 1.5A (Typ) Peak Output Current

• Independent Inputs for Non-Half Bridge Topologies

• Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ)

• Operates with V

= V

Over 12V to 20V Range

• Low-side Supply Undervoltage Protection

Ordering Information

ORDERING NUMBER

5962F9953602VXC

5962F9953602QXC

IS9-2100ARH/Proto

INTERSIL MKT.

NUMBER

IS9-2100ARH-Q

IS9-2100ARH-8

IS9-2100ARH/Proto

TEMP.

RANGE (

-55 to 125

Applications

• High Frequency Switch-Mode Power Supplies

• Drivers for Inductive Loads

• DC Motor Drivers

Pinout

IS-2100ARH

FLATPACK (CDFP4-F16)

TOP VIEW

COM

LIN

HIN

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

Intersil (and design) is a registered trademark of Intersil Americas Inc.

5962F9953602VXC相似产品对比

	5962F9953602VXC	5962F9953602QXC	IS9-2100ARH-8	IS9-2100ARH/PROTO	IS-2100ARH
描述	1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16	1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16	1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16	1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16	1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16
功能数量	1	1	1	1	1
端子数量	16	16	16	16	16
最小工作温度	-55 Cel	-55 Cel	-55 Cel	-55 Cel	-55 Cel
最大工作温度	125 Cel	125 Cel	125 Cel	125 Cel	125 Cel
加工封装描述	CERAMIC, DFP-16	CERAMIC, DFP-16	CERAMIC, DFP-16	CERAMIC, DFP-16	CERAMIC, DFP-16
each_compli	Yes	Yes	Yes	Yes	Yes
状态	Active	Active	Active	Active	Active
接口类型	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER
高端驱动器	YES	YES	YES	YES	YES
jesd_30_code	R-CDFP-F16	R-CDFP-F16	R-CDFP-F16	R-CDFP-F16	R-CDFP-F16
jesd_609_code	e0	e0	e0	e0	e0
moisture_sensitivity_level	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE
额定输出峰值电流限制	1.5 A	1.5 A	1.5 A	1.5 A	1.5 A
包装材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
ckage_code	DFP	DFP	DFP	DFP	DFP
ckage_equivalence_code	FL16,.3	FL16,.3	FL16,.3	FL16,.3	FL16,.3
包装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
包装尺寸	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
eak_reflow_temperature__cel_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
wer_supplies__v_	12/20	12/20	12/20	12/20	12/20
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
seated_height_max	2.92 mm	2.92 mm	2.92 mm	2.92 mm	2.92 mm
sub_category	MOSFET Drivers	MOSFET Drivers	MOSFET Drivers	MOSFET Drivers	MOSFET Drivers
最小供电电压	12 V	12 V	12 V	12 V	12 V
最大供电电压	20 V	20 V	20 V	20 V	20 V
表面贴装	YES	YES	YES	YES	YES
工艺	BIPOLAR	BIPOLAR	BIPOLAR	BIPOLAR	BIPOLAR
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子涂层	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT
端子间距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
l_dose	300k Rad(Si)	300k Rad(Si)	300k Rad(Si)	300k Rad(Si)	300k Rad(Si)
width	6.73 mm	6.73 mm	6.73 mm	6.73 mm	6.73 mm

5962F9953602VXC

5962F9953602VXC概述

5962F9953602VXC规格参数

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