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JANSR2N7495U5

产品描述RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
产品类别分立半导体    晶体管   
文件大小124KB,共8页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
下载文档 详细参数 选型对比 全文预览

JANSR2N7495U5概述

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

JANSR2N7495U5规格参数

参数名称属性值
是否无铅含铅
厂商名称International Rectifier ( Infineon )
零件包装代码LCC
包装说明CHIP CARRIER, R-CQCC-N15
针数18
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性RADIATION HARDENED
雪崩能效等级(Eas)320 mJ
外壳连接SOURCE
配置SINGLE
最小漏源击穿电压60 V
最大漏极电流 (ID)11.7 A
最大漏源导通电阻0.08 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-CQCC-N15
元件数量1
端子数量15
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式CHIP CARRIER
极性/信道类型N-CHANNEL
最大脉冲漏极电流 (IDM)46.8 A
认证状态Not Qualified
参考标准MIL-19500/700
表面贴装YES
端子形式NO LEAD
端子位置QUAD
晶体管应用SWITCHING
晶体管元件材料SILICON

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PD - 94239E
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level R
DS(on)
IRHE57034
100K Rads (Si)
0.08Ω
IRHE53034
300K Rads (Si)
0.08Ω
IRHE54034
IRHE58034
500K Rads (Si)
1000K Rads (Si)
0.08Ω
0.1Ω
I
D
11.7A
11.7A
11.7A
11.7A
IRHE57034
JANSR2N7495U5
60V, N-CHANNEL
REF: MIL-PRF-19500/700
5

TECHNOLOGY
™
QPL Part Number
JANSR2N7495U5
JANSF2N7495U5
JANSG2N7495U5
JANSH2N7495U5
LCC-18
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 (for 5s)
0.42 (Typical)
11.7
7.4
46.8
25
0.2
±20
87
11.7
2.5
3.4
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
04/27/06

JANSR2N7495U5相似产品对比

JANSR2N7495U5 IRHE53034 IRHE54034 IRHE57034 JANSH2N7495U5 JANSG2N7495U5 JANSF2N7495U5 IRHE58034
描述 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
零件包装代码 LCC LCC LCC LCC LCC LCC LCC LCC
包装说明 CHIP CARRIER, R-CQCC-N15 CHIP CARRIER, R-CQCC-N15 CHIP CARRIER, R-CQCC-N15 CHIP CARRIER, R-CQCC-N15 CHIP CARRIER, R-CQCC-N15 CHIP CARRIER, R-CQCC-N15 CHIP CARRIER, R-CQCC-N15 CHIP CARRIER, R-CQCC-N15
针数 18 18 18 18 18 18 18 18
Reach Compliance Code unknow compli unknown unknow compli compli unknow compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
雪崩能效等级(Eas) 320 mJ 87 mJ 87 mJ 87 mJ 87 mJ 87 mJ 87 mJ 87 mJ
外壳连接 SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE
配置 SINGLE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V
最大漏极电流 (ID) 11.7 A 11.7 A 11.7 A 11.7 A 11.7 A 11.7 A 11.7 A 11.7 A
最大漏源导通电阻 0.08 Ω 0.08 Ω 0.08 Ω 0.08 Ω 0.08 Ω 0.08 Ω 0.08 Ω 0.08 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-CQCC-N15 R-CQCC-N15 R-CQCC-N15 R-CQCC-N15 R-CQCC-N15 R-CQCC-N15 R-CQCC-N15 R-CQCC-N15
元件数量 1 1 1 1 1 1 1 1
端子数量 15 15 15 15 15 15 15 15
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 46.8 A 46.8 A 46.8 A 46.8 A 46.8 A 46.8 A 46.8 A 46.8 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
最高工作温度 150 °C 150 °C 150 °C 150 °C - - 150 °C 150 °C
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

 
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