Low Power CMOS SRAM
32K X8 Bits
Features:
• Vcc operation voltage : 2.0V ~ 3.6V
• Low power consumption :
10mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
• High Speed Access time :
35ns (Max.) at Vcc = 2.7V
55ns (Max.) at Vcc = 2.7V
70ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Data retention supply voltage as low as 1.2V
• Easy expansion with CE\ and OE\ options
UC62LV0256
-35/-55/-70
Description
The UC62LV0256 is a high performance, very low power
CMOS Static Random Access Memory organized as 32,768
words by 8 bits and operates from a wide range of 2.0V to
3.6V supply voltage. Advanced CMOS technology and circuit
techniques provide both high speed and low power features
with a typical CMOS standby current of 1uA and maximum
access time of 70ns in 2.0V operation.
Easy memory expansion is provided enable (CE), and
active LOW output enable (OE) and three-state output
drivers.
The UC62LV0256 has an automatic power down feature,
reducing the power consumption significantly when chip is
deselected.
The UC62LV0256 is available in the JEDEC standard 28 pin
330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP
and 8mmx13.4mm TSOP (normal type).
PRODUCT FAMILY
Product
Family
UC62LV0256BC
UC62LV0256CC
UC62LV0256DC
UC62LV0256EC
UC62LV0256AC
UC62LV0256BI
UC62LV0256CI
UC62LV0256DI
UC62LV0256EI
UC62LV0256AI
Operating
Temperature
Vcc Range
Speed
(ns)
Vcc=2.7V
Power Consumption
STANDBY
VCC=3.6V Operating (Max)
Vcc=3.0V
35ns
55ns
70ns
Package
Type
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
0℃ ~ 70℃
2.0V ~ 3.6V
-35/ -55/ -70
0.1uA
17mA
13mA
10mA
-25℃
~ 85
2.0V ~ 3.6V
-35/ -55/ -70
0.1uA
17mA
13mA
10mA
PIN CONFIGURATIONS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BLOCK DIAGRAM
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
ROW
DECODER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
UC62LV0256BI
UC62LV0256DI
UC62LV0256EI
UC62LV0256BC
UC62LV0256DC
UC62LV0256EC
28
27
26
25
24
23
22
21
20
19
18
17
16
15
ROW
Address
ADDRESS INPUT
BUFFER
CE
WE
OE
A0 - A14
MEMORY ARRAY
32K X 8 Bits
COL
Address
COLUMN DECODER
CE
WE
OE
SENSE AMPLIFIER
&
WRITE DRIVER
CONTROL
INPUT
BUFFER
CONTROL
BLOCK
X8
I/O BUFFER
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
UC62LV0256CC
UC62LV0256CI
U-Chip Technology Corp. LTD.
Reserves the right to modify document contents without notice.
Revision 2.0
PAGE 1
Low Power CMOS SRAM
32K X8 Bits
PIN DESCRIPTION
Name
A0 – A14
CE\
Type
Input
Input
Function
Address inputs for selecting one of the 32768 x 8 bit words in the RAM
UC62LV0256
-35/-55/-70
CE\ is active LOW. Chip enable must be active when data read from or write to the device. If chip
enable is not active, the device is deselected and not in a standby power down mode. The DQ
pins will be in high impedance state when the device is deselected.
WE\
Input
The Write enable input is active LOW and controls read and write operations. With the chip
selected, when WE\ is HIGH and OE\ is LOW, output data will be present on the DQ pins, when
WE\ is LOW, the data present on the DQ pins will be written into the selected memory location.
OE\
Input
The output enable input is active LOW. If the output enable is active while the chip is selected
and the write enable is inactive, data will be present on the DQ pins and they will be enabled.
The DQ pins will be in the high impedance state when OE\ is inactive.
DQ0 – DQ7
Vcc
Gnd
I/O
Power
Power
These 8 bi0directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE\
X
H
H
L
CE\
H
L
L
L
OE\
X
H
L
X
I/O state
High Z
High Z
D
OUT
D
IN
Vcc Current
I
SB
,I
SB1
I
CC
I
CC
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
V
TERM
T
BIAS
T
STG
PT
I
OUT
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
RATING
-0.5 to V
CC
+0.5
-40 to 125
-50 to 150
50mW
10
UNIT
V
℃
℃
W
mA
OPERATING RANGE
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0℃ to 70℃
-25℃
to 85℃
V
CC
2.0V~ 3.6V
2.0V ~ 3.6V
CAPACITANCE
(1)
(TA=25℃,f=1.0MHz)
SYMBOL
CIN
PARAMETER
CONDITIONS MAX.
UNIT
Input
VIN=0V
6
pF
Capacitance
Input/Output
VDQ
8
pF
CDQ
Capacitance
1. This parameter is guaranteed and not 100% tested.
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
U-Chip Technology Corp. LTD.
Reserves the right to modify document contents without notice.
Revision 2.0
PAGE 2
Low Power CMOS SRAM
32K X8 Bits
UC62LV0256
-35/-55/-70
DC ELECTRICAL CHARACTERISTICS (TA=-25℃ to 85℃
,
VCC=2.0V to 3.6V)
Symbol
V
IL
V
IH
I
L
I
OL
V
OL
V
OH
I
CC
I
SB1
I
SB2
Comment
Guaranteed Input Low
(2)
Voltage
Guaranteed Input High
(2)
Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
TTL Standby Current
CMOS Standby Current
Test Condition
V
CC
=2.7V
V
CC
=3.6V
V
CC
=3.6V V
IN
=0V to V
CC
V
CC
=3.6V CE\=V
IH
or OE\=V
IH
V
IO
=0V t V
CC
V
CC
=3.6V, I
OL
=2 mA
V
CC
=3.0V, I
OH
=-1 mA
CE\=V
IL
,I
DQ
=0mA, F=Fmax
CE\=V
IH
, V
IN
=V
IH
to V
IL
CE\≧V
CC
-0.2V, V
IN
=V
CC
-0.2V
to 0.2V
(3)
MIN.
-0.5
2.0
-
-
-
2.4
-
-
-
TYP.
(1)
-
-
-
-
-
-
-
-
0.1uA
MAX.
0.8
Vcc-0.2
1
1
0.4
-
10
1
1
UNITS
V
V
uA
uA
V
V
mA
mA
uA
1. Typical characteristics are at TA = 25℃.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC, tRC=70ns .
DATA RETENTION CHARACTERISTICS ( TA=0℃ to 70℃)
Symbol
V
DR
I
CCDR
t
DR
t
R
1.
2.
Comment
VCC to Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Test Condition
CE\≧V
CC
- 0.2V
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
CE\≧V
CC
- 0.2V
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
See Retention Waveform
T
RC
(2)
MIN.
1.2
-
0
TYP.
-
(1)
MAX.
-
0.5
-
-
UNITS
V
uA
ns
ns
0.05
-
-
V
CC
= 1.5V, TA = 25℃.
t
RC
= Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM
(1)
(CE\ Controlled)
Vcc
CE
t
CDR
VIH
Data Retention Mode
V
DR
>= 1. 2V
CE >= V
CC
- 0. 2V
t
R
VIH
U-Chip Technology Corp. LTD.
Reserves the right to modify document contents without notice.
Revision 2.0
PAGE 3
Low Power CMOS SRAM
32K X8 Bits
UC62LV0256
-35/-55/-70
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
VCC/0V
1V/ns
0.5VCC
KEY TO SWITCHING WAVEFORMS
WAVEFORMS
INPUTS
MUST BE
STEADY
MAY CHANGE
FROM H TO L
1269Ω
OUTPUTS
MUST BE
STEADY
WILL BE
CHANGE
FROM H TO L
WILL BE
CHANGE
FROM L TO H
CHANGE
STATE
UNKNOWN
AC TEST LOADS AND WAVEFORMS
3.3V
INCLUDING
JIG AND
SCOPE
INCLUDING
JIG AND
SCOPE
3.3V
1269Ω
OUTPUT
OUTPUT
MAY CHANGE
FROM L TO H
DON’T CARE
ANY CHANGE
PERMITTED
1404Ω
FIGURE 1A
FIGURE 1B
DOES NOT
APPLY
1404Ω
100pF
5pF
TERMINAL EQUIVALENT
667Ω
OUTPUT
1.73V
CENTER LINE
IS HIGH
IMPEDANCE
OFF STATE
ALL INPUT PULSES
V
CC
GND
10%
90%
90%
10%
FIGURE 2
5ns
5ns
AC ELECTRICAL CHARACTERISTICS (TA=0℃ to 70℃, V
CC
=3.0V)
READ CYCLE
JEDEC
PARAMETER
NAME
t
AVAX
t
AVQV
t
ELQV
t
GLQV
t
ELQX
t
GLQX
t
EHQZ
t
GHQZ
t
AXOX
PARAMETER
NAME
t
RC
t
AA
t
CE
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
t
OH
DESCRIPTION
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Output Enable to Output Low Z
Chip Deselect to Output in High Z
Output Disable to Output in High Z
Address Chang to Output Change
UC62LV0256-35
Min
35
-
-
-
5
5
0
0
10
Typ
-
-
-
-
-
-
-
-
-
Max
-
35
35
15
-
-
35
20
-
UC62LV0256-70
Min
70
-
-
-
10
10
0
0
10
Typ
-
-
-
-
-
-
-
-
-
Max
-
70
70
50
-
-
35
30
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
U-Chip Technology Corp. LTD.
Reserves the right to modify document contents without notice.
Revision 2.0
PAGE 4
Low Power CMOS SRAM
32K X8 Bits
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t
RC
ADDRESS
t
OH
D
OUT
t
AA
UC62LV0256
-35/-55/-70
t
OH
READ CYCLE2
(1,3,4)
CE
t
CLZ (5)
D
OUT
t
CE
t
CHZ (5)
READ CYCLE3
(1,4)
t
RC
ADDRESS
t
AA
OE
t
OE
CE
t
OLZ
t
CLZ (5)
D
OUT
NOTES:
1. WE\ is high in read cycle.
2. Device is continuously selected when CE\ = VIL
3. Address valid prior to or coincident with CE\ transition low.
4. OE\ = VIL.
5. Transition is measured ±500mV from steady state with CL=5pF as shown in Figure 1B. The
parameter is guaranteed but not 100% tested.
t
OH
t
OHZ (1,5)
t
CE
t
CHZ (5)
U-Chip Technology Corp. LTD.
Reserves the right to modify document contents without notice.
Revision 2.0
PAGE 5
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