Ordering number : ENN7684
2SJ656
P-Channl Silicon MOSFET
2SJ656
General-Purpose Switching Device
Features
•
•
•
•
Package Dimensions
unit : mm
2063A
[2SJ656]
10.0
3.2
3.5
7.2
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
4.5
2.8
18.1
16.0
5.6
14.0
1.6
1.2
0.75
2.4
0.7
2.55
1 2 3
2.55
2.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
2.55
2.55
Ratings
--100
±20
--18
--72
2.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
Conditions
ID=--1mA, VGS=0
VDS=-
-100V, VGS=0
VGS=±16V, VDS=0
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-9A
Ratings
min
--100
--1
±10
-
-1.2
14
20
--2.6
typ
max
Unit
V
µA
µA
V
S
Marking : J656
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41504QA TS IM TA-100801 No.7684-1/4
2SJ656
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain“Miller”Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--9A, VGS=--10V
ID=--9A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=-
-10V, ID=--18A
VDS=--50V, VGS=-
-10V, ID=--18A
VDS=--50V, VGS=-
-10V, ID=--18A
IS=--18A, VGS=0
Ratings
min
typ
58
74
4200
280
220
30
110
340
128
74
12.8
14.7
--0.93
--1.2
max
75.5
104
Unit
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
0V
--10V
VIN
ID= --9A
RL=5.56Ω
VDD= --50V
D
PW=10µs
D.C.≤1%
VOUT
G
2SJ656
P.G
50Ω
S
--40
ID -- VDS
Tc=25°C
--1
0V
V
--6
--40
ID -- VGS
25
°
Tc=
C
--25
°
C
2
75
°
C
5
°
C
--1.5
--2.0
--2.5
--3.0
VDS= --10V
--4V
Drain Current, ID -- A
--20
Drain Current, ID -- A
--30
--30
--20
--10
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
0
0
--0.5
--1.0
Tc=
--25
°
C
--3.5
--4.0
VGS= --3V
--10
75
°
C
--4.5
--5.0
Drain-to-Source Voltage, VDS -- V
IT06626
Gate-to-Source Voltage, VGS -- V
IT06627
No.7684-2/4
2SJ656
140
RDS(on) -- VGS
ID= --9A
140
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
100
100
80
Tc=75
°
C
25°C
80
60
60
4V
=
--
S
, VG
10V
9A
--
=
--
I D=
V GS
A,
--9
I D=
--25°C
40
40
20
0
0
20
0
--50
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
100
y
fs -- ID
IT06628
--100
7
5
3
2
Case Temperature, Tc --
°C
IT06629
IF -- VSD
VGS=0
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
VDS= --10V
Forward Drain Current, IF -- A
°
25
°
C
C
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
10
7
5
3
2
1.0
--0.1
--0.01
7
5
3
2
--0.001
0
--0.3
--0.6
--0.9
--1.2
--1.5
IT06631
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
7
Drain Current, ID -- A
1000
7
IT06630
10000
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
3
2
VDD= --50V
VGS= --10V
7
5
Tc=7
5
-25
=-
Tc
°
C
75
--25
°
C
°
C
25
°
C
Ciss
Ciss, Coss, Crss -- pF
3
2
tf
100
7
5
3
2
10
--0.1
1000
7
5
3
2
100
tr
td(on)
Coss
Crss
--5
--10
--15
--20
--25
--30
IT06633
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
IT06632
2
--100
7
5
0
Drain Current, ID -- A
--10
--9
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --50V
ID= --18A
IDP= --72A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
10
20
30
40
50
60
70
80
Drain Current, ID -- A
3
2
--10
7
5
3
2
--1.0
7
5
3
2
ID= --18A
10
DC
Operation in this area
is limited by RDS(on).
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
10
ms
0m
s
<10µs
10
µ
s
10
0
µ
s
1m
s
op
era
tio
n
--0.1
--0.1
5 7 --10
2
3
Total Gate Charge, Qg -- nC
IT06634
Drain-to-Source Voltage, VDS -- V
5 7--100 2
IT06635
No.7684-3/4
2SJ656
2.5
PD -- Ta
Allowable Power Dissipation, PD -- W
40
35
30
25
20
15
10
5
0
PD -- Tc
Allowable Power Dissipation, PD -- W
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT06636
Case Temperature, Tc --
°C
IT06637
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject
to change without notice.
PS No.7684-4/4
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