1N3909: 产品描述30 A, 50 V, SILICON, RECTIFIER DIODE, DO-5; 产品类别分立半导体二极管; 文件大小97KB，共2页; 制造商SSDI; 官网地址http://www.ssdi-power.com/

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1N3909概述

30 A, 50 V, SILICON, RECTIFIER DIODE, DO-5

1N3909规格参数

参数名称	属性值
厂商名称	SSDI
零件包装代码	DO-5
包装说明	O-MUPM-D1
针数	1
Reach Compliance Code	unknown
应用	FAST RECOVERY
外壳连接	CATHODE
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.4 V
JEDEC-95代码	DO-5
JESD-30 代码	O-MUPM-D1
最大非重复峰值正向电流	300 A
元件数量	1
相数	1
端子数量	1
最高工作温度	150 °C
最大输出电流	30 A
封装主体材料	METAL
封装形状	ROUND
封装形式	POST/STUD MOUNT
认证状态	Not Qualified
最大重复峰值反向电压	50 V
最大反向恢复时间	0.2 µs
表面贴装	NO
端子形式	SOLDER LUG
端子位置	UPPER
Base Number Matches	1

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Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

1N3909

Thru

1N3913

Part Number/Ordering Information

1N3909

__ __

Designer’s Data Sheet

30A, 200nsec, 50-400 V

Fast Recovery Rectifier

Features

•

│ │

└

Screening

= Not Screened

│ │

TX = TX Level

│ │

TXV = TXV Level

│ │

S = S Level

│ │

│

└

Pin Configuration

__ = Normal

(Cathode to Stud)

│

(See Table 1)

R = Reverse

(Anode to Stud)

│

└

Family/Voltage

1N3909 = 50V

1N3910 = 100V

1N3911 = 200V

1N3912 = 300V

1N3913 = 400V

Fast Recovery: 200nsec Maximum (100nsec typ.)

Low Reverse Leakage Current

Single Chip Construction

PIV to 400V, Higher Voltages Available

Hermetically Sealed Isolated Package

High Surge Rating

TX, TXV, and S-Level Screening Available

Maximum Ratings

1N3909

1N3910

1N3911

1N3912

1N3913

Symbol

RRM

RWM

FSM

STG

θJC

Value

100

200

300

400

300

-55 to +150

-65 to +175

1.2

Units

Peak Repetitive Reverse Voltage

Volts

Average Rectified Forward Current

(Resistive Load, 60 Hz Sine Wave, T

= 25 °C)

Amps

ºC

ºC/W

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave, T

= 25 °C, per leg)

Operating & Storage Temperature

Maximum Total Thermal Resistance

Junction to Case

DO-5:

Notes:

1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Recovery Conditions: I

= 500 mA, I

= 1 Amp, I

= 250 mA.

4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.

NOTE:

All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0114A

DOC

1N3909相似产品对比

	1N3909	1N3910	1N3912	1N3911	1N3913
描述	30 A, 50 V, SILICON, RECTIFIER DIODE, DO-5	30 A, 100 V, SILICON, RECTIFIER DIODE	30 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB	30 A, SILICON, RECTIFIER DIODE, DO-5	30 A, SILICON, RECTIFIER DIODE, DO-5
厂商名称	SSDI	SSDI	SSDI	SSDI	SSDI
零件包装代码	DO-5	DO-5	DO-5	DO-5	DO-5
包装说明	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
针数	1	1	1	1	1
Reach Compliance Code	unknown	unknown	unknow	unknow	unknow
应用	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
外壳连接	CATHODE	CATHODE	CATHODE	CATHODE	CATHODE
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V
JEDEC-95代码	DO-5	DO-5	DO-5	DO-5	DO-5
JESD-30 代码	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
最大非重复峰值正向电流	300 A	300 A	300 A	300 A	300 A
元件数量	1	1	1	1	1
相数	1	1	1	1	1
端子数量	1	1	1	1	1
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
最大输出电流	30 A	30 A	30 A	30 A	30 A
封装主体材料	METAL	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	50 V	100 V	300 V	200 V	400 V
最大反向恢复时间	0.2 µs	0.2 µs	0.2 µs	0.2 µs	0.2 µs
表面贴装	NO	NO	NO	NO	NO
端子形式	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
端子位置	UPPER	UPPER	UPPER	UPPER	UPPER
Base Number Matches	1	1	-	1	-

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