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IDT7201LA30DB8

产品描述FIFO, 512X9, 30ns, Asynchronous, CMOS, CDIP28
产品类别存储    存储   
文件大小119KB,共14页
制造商IDT (Integrated Device Technology)
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IDT7201LA30DB8概述

FIFO, 512X9, 30ns, Asynchronous, CMOS, CDIP28

IDT7201LA30DB8规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
包装说明DIP-28
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间30 ns
周期时间40 ns
JESD-30 代码R-CDIP-T28
JESD-609代码e0
内存密度4608 bit
内存集成电路类型OTHER FIFO
内存宽度9
功能数量1
端子数量28
字数512 words
字数代码512
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织512X9
可输出NO
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DIP
封装等效代码DIP28,.6
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
峰值回流温度(摄氏度)225
电源5 V
认证状态Not Qualified
筛选级别MIL-STD-883 Class B
最大待机电流0.015 A
最大压摆率0.1 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
Base Number Matches1

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CMOS ASYNCHRONOUS FIFO
256 x 9, 512 x 9 and 1,024 x 9
FEATURES:
IDT7200L
IDT7201LA
IDT7202LA
First-In/First-Out dual-port memory
256 x 9 organization (IDT7200)
512 x 9 organization (IDT7201)
1,024 x 9 organization (IDT7202)
Low power consumption
— Active: 440mW (max.)
—Power-down: 28mW (max.)
Ultra high speed—12ns access time
Asynchronous and simultaneous read and write
Fully expandable by both word depth and/or bit width
Pin and functionally compatible with 720X family
Status Flags: Empty, Half-Full, Full
Auto-retransmit capability
High-performance CEMOS™ technology
Military product compliant to MIL-STD-883, Class B
Standard Military Drawing #5962-87531, 5962-89666, 5962-89863
and 5962-89536 are listed on this function
Dual versions available in the TSSOP package. For more informa-
tion, see IDT7280/7281/7282 data sheet
IDT7280 = 2 x IDT7200
IDT7281 = 2 x IDT7201
IDT7282 = 2 x IDT7202
Industrial temperature range (–40
o
C to +85
o
C) is available
(plastic packages only)
Green parts available, see ordering information
DESCRIPTION:
The IDT7200/7201/7202 are dual-port memories that load and empty data
on a first-in/first-out basis. The devices use Full and Empty flags to prevent data
overflow and underflow and expansion logic to allow for unlimited expansion
capability in both word size and depth.
The reads and writes are internally sequential through the use of ring
pointers, with no address information required to load and unload data. Data
is toggled in and out of the devices through the use of the Write (W) and Read
(R) pins.
The devices utilize a 9-bit wide data array to allow for control and parity bits
at the user’s option. This feature is especially useful in data communications
applications where it is necessary to use a parity bit for transmission/reception
error checking. It also features a Retransmit (RT) capability that allows for reset
of the read pointer to its initial position when
RT
is pulsed LOW to allow for
retransmission from the beginning of data. A Half-Full Flag is available in the
single device mode and width expansion modes.
These FIFOs are fabricated using IDT’s high-speed CMOS technology.
They are designed for those applications requiring asynchronous and
simultaneous read/writes in multiprocessing and rate buffer applications.
Military grade product is manufactured in compliance with the latest revision of
MIL-STD-883, Class B.
FUNCTIONAL BLOCK DIAGRAM
DATA INPUTS
(D
0
-D
8
)
W
WRITE
CONTROL
WRITE
POINTER
RAM
ARRAY
256 x 9
512 x 9
1,024 x 9
READ
POINTER
R
READ
CONTROL
THREE-
STATE
BUFFERS
DATA OUTPUTS
(Q
0
-Q
8
)
RS
RESET
LOGIC
FL/RT
FLAG
LOGIC
EXPANSION
LOGIC
EF
FF
XI
IDT and the IDT logo are trademarks of Integrated Device Technology, Inc.
XO/HF
2679 drw 01
©2006
Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.
COMMERCIAL, INDUSTRIAL AND MILITARY TEMPERATURE RANGES
1
APRIL 2006
DSC-2679/11

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