70T653MS10BCG: 产品描述CABGA-256, Tray; 产品类别存储存储; 文件大小494KB，共26页; 制造商IDT (Integrated Device Technology); 标准

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70T653MS10BCG概述

CABGA-256, Tray

70T653MS10BCG规格参数

参数名称	属性值
Brand Name	Integrated Device Technology
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	CABGA
包装说明	LBGA, BGA256,16X16,40
针数	256
制造商包装代码	BCG256
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
Samacsys Description	CHIP ARRAY BGA 17.0 X 1.7.0 MM X 1.0 MM
最长访问时间	10 ns
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B256
JESD-609代码	e1
长度	17 mm
内存密度	18874368 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	36
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	256
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	512KX36
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LBGA
封装等效代码	BGA256,16X16,40
封装形状	SQUARE
封装形式	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	2.5,2.5/3.3 V
认证状态	Not Qualified
座面最大高度	1.5 mm
最大待机电流	0.02 A
最小待机电流	2.4 V
最大压摆率	0.81 mA
最大供电电压 (Vsup)	2.6 V
最小供电电压 (Vsup)	2.4 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL
端子节距	1 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	30
宽度	17 mm
Base Number Matches	1

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HIGH-SPEED 2.5V

512K x 36

ASYNCHRONOUS DUAL-PORT

STATIC RAM

WITH 3.3V 0R 2.5V INTERFACE

◆

70T653M

Features

◆

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12ns (max.)

RapidWrite Mode simplifies high-speed consecutive write

cycles

Dual chip enables allow for depth expansion without

external logic

IDT70T653M easily expands data bus width to 72 bits or

more using the Busy Input when cascading more than one

device

Busy input for port contention management

Interrupt Flags

◆

Full on-chip hardware support of semaphore signaling

between ports

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Sleep Mode Inputs on both ports

Single 2.5V (±100mV) power supply for core

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Includes JTAG functionality

Available in a 256-ball Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

Green parts available, see ordering information

Functional Block Diagram

BBBB

EEEE

3210

R RRR

Dout0-8_L

Dout0-8_R

Dout9-17_L

Dout9-17_R

Dout18-26_L Dout18-26_R

Dout27-35_L Dout27-35_R

512K x 36

MEMORY

ARRAY

I/O

0L-

I/O

35L

Di n_L

Di n_R

I/O

0R -

I/O

35R

18L

Address

Decoder

ADDR_L

ADDR_R

Address

Decoder

18R

R/W

BUSY

SEM

INT

L(1)

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

R/W

TDI

TDO

JTAG

TCK

TMS

TRST

BUSY

SEM

INT

R(1)

NOTES:

CONTROL

L(2)

R(2)

LOGIC

INT

is non-tri-state totem-pole outputs (push-pull).

2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,

INTx

and the sleep mode

pins themselves (ZZx) are not affected during sleep mode.

5679 drw 01

JUNE 2019

DSC-5679/8

70T653MS10BCG相似产品对比

	70T653MS10BCG	70T653MS12BCI	70T653MS12BC	70T653MS12BCGI	70T653MS10BC	70T653MS10BC8	70T653MS15BC	70T653MS12BC8
描述	CABGA-256, Tray	CABGA-256, Tray	CABGA-256, Tray	CABGA-256, Tray	CABGA-256, Tray	CABGA-256, Reel	CABGA-256, Tray	CABGA-256, Reel
Brand Name	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology	Integrated Device Technology
是否无铅	不含铅	含铅	含铅	不含铅	含铅	含铅	含铅	含铅
是否Rohs认证	符合	不符合	不符合	符合	不符合	不符合	不符合	不符合
零件包装代码	CABGA	CABGA	CABGA	CABGA	CABGA	CABGA	CABGA	CABGA
包装说明	LBGA, BGA256,16X16,40	LBGA, BGA256,16X16,40	LBGA, BGA256,16X16,40	LBGA, BGA256,16X16,40	LBGA, BGA256,16X16,40	LBGA, BGA256,16X16,40	LBGA, BGA256,16X16,40	LBGA, BGA256,16X16,40
针数	256	256	256	256	256	256	256	256
制造商包装代码	BCG256	BC256	BC256	BCG256	BC256	BC256	BC256	BC256
Reach Compliance Code	compliant	_compli	_compli	compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	10 ns	12 ns	12 ns	12 ns	10 ns	10 ns	15 ns	12 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PBGA-B256	S-PBGA-B256	S-PBGA-B256	S-PBGA-B256	S-PBGA-B256	S-PBGA-B256	S-PBGA-B256	S-PBGA-B256
JESD-609代码	e1	e0	e0	e1	e0	e0	e0	e0
长度	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm
内存密度	18874368 bit	18874368 bi	18874368 bi	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	36	36	36	36	36	36	36	36
湿度敏感等级	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2	2
端子数量	256	256	256	256	256	256	256	256
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	70 °C	85 °C	70 °C	70 °C	70 °C	70 °C
组织	512KX36	512KX36	512KX36	512KX36	512KX36	512KX36	512KX36	512KX36
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LBGA	LBGA	LBGA	LBGA	LBGA	LBGA	LBGA	LBGA
封装等效代码	BGA256,16X16,40	BGA256,16X16,40	BGA256,16X16,40	BGA256,16X16,40	BGA256,16X16,40	BGA256,16X16,40	BGA256,16X16,40	BGA256,16X16,40
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	225	225	260	225	225	225	225
电源	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.5 mm	1.5 mm	1.5 mm	1.5 mm	1.5 mm	1.5 mm	1.5 mm	1.5 mm
最大待机电流	0.02 A	0.04 A	0.02 A	0.04 A	0.02 A	0.02 A	0.02 A	0.02 A
最小待机电流	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
最大压摆率	0.81 mA	0.79 mA	0.71 mA	0.79 mA	0.81 mA	0.81 mA	0.6 mA	0.71 mA
最大供电电压 (Vsup)	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V
最小供电电压 (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	30	20	20	30	20	20	20	20
宽度	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm	17 mm
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)
Samacsys Description	CHIP ARRAY BGA 17.0 X 1.7.0 MM X 1.0 MM	-	-	CHIP ARRAY BGA 17.0 X 1.7.0 MM X 1.0 MM	CHIP ARRAY BGA 17.0 X 1.7.0 MM X 1.0 MM	CHIP ARRAY BGA 17.0 X 1.7.0 MM X 1.0 MM	-	CHIP ARRAY BGA 17.0 X 1.7.0 MM X 1.0 MM
Base Number Matches	1	1	1	1	1	1	1	-

70T653MS10BCG

70T653MS10BCG在线购买

70T653MS10BCG概述

70T653MS10BCG规格参数

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70T653MS10BCG相似产品对比

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