Philips Semiconductors
Product specification
Octal D-type transparent latch (3-State)
74LVC573
FEATURES
•
Wide supply voltage range of 1.2V to 3.6V
•
In accordance with JEDEC standard no. 8-1A
•
Inputs accept voltages up to 5.5V
•
CMOS low power consumption
•
Direct interface with TTL levels
•
Flow-through pin-out architecture
•
Output drive capability 50W transmission lines @ 85°C
DESCRIPTION
The 74LVC573 is a high performance, low-power, low-voltage
Si-gate CMOS device and superior to most advanced CMOS
compatible TTL families. Inputs can be driven from either 3.3V or 5V
devices. This feature allows the use of these devices as translators
in a mixed 3.3V/5V environment.
The 74LVC573 is an octal D-type transparent latch featuring
separate D-type inputs for each latch and 3-State outputs for bus
oriented applications. A latch enable (LE) input and an output enable
(OE) input are common to all internal latches.
The ‘573’ consists of eight D-type transparent latches with 3-State
true outputs. When LE is HIGH, data at the D
n
inputs enters the
latches. In this condition the latches are transparent, i.e., a latch
output will change each time its corresponding D-input changes.
When LE is LOW the latches store the information that was present
at the D-inputs a set-up time preceding the HIGH-to-LOW transition
of LE. When OE is LOW, the contents of the eight latches are
available at the outputs. When OE is HIGH, the outputs go to the
high impedance OFF-state. Operation of the OE input does not
affect the state of the latches.
The ‘573’ is functionally identical to the ‘373’, but the ‘373’ has a
different pin arrangement.
QUICK REFERENCE DATA
GND = 0V; T
amb
= 25°C; t
r
= t
f
v2.5
ns
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
PARAMETER
Propagation delay
Dn to Qn
LE to Qn
Input capacitance
Power dissipation capacitance per latch
Notes 1, 2
CONDITIONS
C
L
= 50pF
V
CC
= 3.3V
TYPICAL
4.3
4.6
5.0
23
UNIT
ns
pF
pF
NOTES:
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW)
P
D
= C
PD
×
V
CC2
×
f
i
+Σ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz; C
L
= output load capacity in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
Σ
(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
2. The condition is V
I
= GND to V
CC.
ORDERING AND PACKAGE INFORMATION
PACKAGES
20-Pin Plastic SO
20-Pin Plastic SSOP Type II
20-Pin Plastic TSSOP Type I
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
OUTSIDE NORTH
AMERICA
74LVC573 D
74LVC573 DB
74LVC573 PW
NORTH AMERICA
74LVC573 D
74LVC573 DB
74LVC573PW DH
PKG. DWG. #
SOT163-1
SOT339-1
SOT360-1
PIN DESCRIPTION
PIN NUMBER
1
2, 3, 4, 5,
6, 7, 8, 9
19, 18, 17, 16,
15, 14, 13, 12
10
11
20
SYMBOL
OE
D0–D7
Q0–Q7
GND
LE
V
CC
FUNCTION
Output enabled input (active LOW)
Data inputs
3-State latch outputs
Ground (0V)
Latch enable input (active HIGH)
Positive supply voltage
1997 Mar 12
2
853–1941 17843
Philips Semiconductors
Product specification
Octal D-type transparent latch (3-State)
74LVC573
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
V
CC
V
CC
V
I
V
I/O
V
O
T
amb
t
r
, t
f
PARAMETER
DC supply voltage (for max. speed performance)
DC supply voltage (for low-voltage applications)
DC input voltage range
DC input voltage range for I/Os
DC output voltage range
Operating free-air temperature range
Input rise and fall times
V
CC
= 1.2 to 2.7V
V
CC
= 2.7 to 3.6V
CONDITIONS
MIN
2.7
1.2
0
0
0
–40
0
0
MAX
3.6
3.6
5.5
V
CC
V
CC
+85
20
10
V
V
V
V
V
°C
ns/V
UNIT
ABSOLUTE MAXIMUM RATINGS
1
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL
V
CC
I
IK
V
I
V
I/O
I
OK
V
OUT
I
OUT
I
GND
, I
CC
T
stg
P
TOT
PARAMETER
DC supply voltage
DC input diode current
DC input voltage
DC input voltage range for I/Os
DC output diode current
DC output voltage
DC output source or sink current
DC V
CC
or GND current
Storage temperature range
Power dissipation per package
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
above +70°C derate linearly with 8 mW/K
above +60°C derate linearly with 5.5 mW/K
V
O
uV
CC
or V
O
t
0
Note 2
V
O
= 0 to V
CC
V
I
t0
Note 2
CONDITIONS
RATING
–0.5 to +6.5
–50
–0.5 to +5.5
–0.5 to V
CC
+0.5
"50
–0.5 to V
CC
+0.5
"50
"100
–60 to +150
500
500
UNIT
V
mA
V
V
mA
V
mA
mA
°C
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1997 Mar 12
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