FIFO, 4KX9, 25ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28
参数名称 | 属性值 |
厂商名称 | Rochester Electronics |
包装说明 | DIP, |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最长访问时间 | 25 ns |
周期时间 | 35 ns |
JESD-30 代码 | R-GDIP-T28 |
JESD-609代码 | e0 |
长度 | 37.1475 mm |
内存密度 | 36864 bit |
内存宽度 | 9 |
功能数量 | 1 |
端子数量 | 28 |
字数 | 4096 words |
字数代码 | 4000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 4KX9 |
可输出 | NO |
封装主体材料 | CERAMIC, GLASS-SEALED |
封装代码 | DIP |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | PARALLEL |
座面最大高度 | 5.588 mm |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | TIN LEAD |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
宽度 | 15.24 mm |
Base Number Matches | 1 |
AM7204-25DC | AM7204-25PC | AM7204-35DC | AM7204-50DC | AM7204-65DC | AM7204-65PC | |
---|---|---|---|---|---|---|
描述 | FIFO, 4KX9, 25ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 | FIFO, 4KX9, 25ns, Asynchronous, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | FIFO, 4KX9, 35ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 | FIFO, 4KX9, 50ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 | FIFO, 4KX9, 65ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 | FIFO, 4KX9, 65ns, Asynchronous, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 |
厂商名称 | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
包装说明 | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最长访问时间 | 25 ns | 25 ns | 35 ns | 50 ns | 65 ns | 65 ns |
周期时间 | 35 ns | 35 ns | 45 ns | 65 ns | 80 ns | 80 ns |
JESD-30 代码 | R-GDIP-T28 | R-PDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-PDIP-T28 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 37.1475 mm | 37.084 mm | 37.1475 mm | 37.1475 mm | 37.1475 mm | 37.084 mm |
内存密度 | 36864 bit | 36864 bit | 36864 bit | 36864 bit | 36864 bit | 36864 bit |
内存宽度 | 9 | 9 | 9 | 9 | 9 | 9 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 28 | 28 | 28 | 28 | 28 | 28 |
字数 | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words |
字数代码 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 4KX9 | 4KX9 | 4KX9 | 4KX9 | 4KX9 | 4KX9 |
可输出 | NO | NO | NO | NO | NO | NO |
封装主体材料 | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY |
封装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
座面最大高度 | 5.588 mm | 5.715 mm | 5.588 mm | 5.588 mm | 5.588 mm | 5.715 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
宽度 | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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