Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF35N20M
SFF35N20Z
55 AMP (note 1) /200 Volts
35 mO
N-Channel Trench Gate
MOSFET
Features:
•
•
•
•
•
•
•
TRENCH GATE technology
Lowest ON-resistance in the industry
UIS rated
Hermetically Sealed, Isolated Power Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (R
DS(ON)
Q
G
) figure of merit
Enhanced replacement for IRHM250 types
DESIGNER’S DATA SHEET
TO-254 and TO-254Z
note 1: Drain Current is package limited
•
•
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current
(junction temperature limited)
Max. Continuous Drain Current (package limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
TO-254Z(Z)
TO-254 (M)
Symbol
V
DSS
V
GS
@ T
C
= 25ºC
@ T
C
= 125ºC
@ T
C
= 25ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ T
C
= 25ºC
I
D1
I
D2
I
D3
I
AR
E
AR
P
D
T
OP
& T
STG
R
0JC
Value
200
±20
85
12
55
35
60
210
-55 to +175
0.7
(typ 0.55)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
PIN 3
PIN 2
PIN 3
PIN 2
PIN 1
PIN 1
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0018A
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFRC35N20M
SFRC35N20Z
Symbol
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 30A, Tj= 25
o
C
V
GS
= 10V, I
D
= 30A, Tj=125
o
C
V
GS
= 10V, I
D
= 30A, Tj= 175
o
C
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20V
V
DS
= 200V, V
GS
= 0V, T
j
= 25
o
C
V
DS
= 200V, V
GS
= 0V, T
j
= 125
o
C
V
DS
= 200V, V
GS
= 0V, T
j
= 175
o
C
V
DS
= 10V, I
D
= 30A, T
j
= 25
o
C
V
GS
= 10V
V
DS
= 100V
I
D
= 65A
V
GS
= 10V
V
DS
= 100V
I
D
= 65A
R
G
= 2.5O min
I
F
= 65A, V
GS
= 0V
I
F
= 50A, di/dt = 100A/usec
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
BV
DSS
R
DS(on)
V
GS(th)
I
GSS
I
DSS
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
I
RM(rec)
Q
rr
C
iss
C
oss
C
rss
Electrical Characteristics
4/
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
200
––
––
––
2.0
––
––
––
––
23
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ Max
––
26
51
67
––
––
––
––
––
––
90
25
35
25
225
50
200
1.0
140
8
0.55
5100
480
210
––
35.0
––
––
4.0
±100
1
50
250
––
135
––
––
40
340
75
300
1.50
220
12.5
1.3
––
––
––
Units
V
mO
V
nA
µA
µA
µA
Mho
nC
nsec
V
nsec
A
µC
pF
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines / lead bending options / pinout configurations Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25
o
C.
Available Part Numbers:
Consult Factory
PIN ASSIGNMENT (Standard)
Package
Drain
Source
Gate
Pin 1
Pin 2
Pin 3
TO-254 (M)
Pin 1
Pin 2
Pin 3
TO-254Z (Z)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0018A
DOC
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