Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF24N50/3
SFF24N50/3T
24 AMP / 500 Volts
0.2
Ω
N-Channel
Power MOSFET
TO-3
DESIGNER’S DATA SHEET
Features:
•
•
•
•
•
•
•
•
•
•
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IXTH24N50 Types
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current (Tj limited)
Avalanche Current
Avalanche Energy
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation @ TC=25ºC
Total Device Dissipation @ TC=55ºC
Package Outline: TO-3
Pin Out:
Pin 1: GATE
Pin 2: SOURCE
Pin 3: DRAIN
Notes:
1.
P/N: SFF 24N50/3:
Pin Diameter : 0.043”
0.038”
2.
P/N: SFF24N50/3T:
Pin Diameter: 0.063”
0.058”
Ø.875
MAX
2x Ø.165
.151
SEATING PLANE
Symbol
V
DS
V
GS
I
D
Repetitive
Repetitive
Single Pulse
I
AR
E
AR
E
AS
Top & Tstg
R
θJC
PD
Value
500
±20
24
21
1
690
-55 to +150
0.75
(typ 0.6)
167
126
.675
.655
Units
Volts
Volts
Amps
Amps
mJ
ºC
ºC/W
WATTS
.135 MAX
.525 MAX
2x R.188 MAX
2x .043
.038
.440
.420
2
2x .225
.205
1
.450
.250
2x .312 MIN
1.197
1.177
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00175E
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF24N50/3
SFF24N50/3T
Symbol
BV
DSS
R
DS(on)
I
D(on)
V
GS(th)
g
fs
I
DSS
Electrical Characteristics @ T
J
= 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250
µA)
Drain to Source On State Resistance
(VGS=10 V, ID=50% Rated ID)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10V)
Gate Threshold Voltage
(VDS=VGS, ID= 4mA)
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
T
J
=25ºC
IF=10A
Di/dt=100A/µsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
At rated VGS
VGS=10 Volts
50% rated VDS
50% Rated ID
VDD=50% Rated VDS
50% Rated ID
RG= 6.2Ω
VGS=10 Volts
Min
500
––
24
2.0
8
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
––
––
––
––
12
––
––
––
––
135
28
62
16
33
65
30
––
––
––
4200
450
135
Max
––
0.2
––
4.0
––
250
1000
+100
-100
180
40
85
30
45
130
40
1.5
500
––
––
––
––
Units
Volts
Ω
A
V
mho
µA
I
GSS
Q
g
Q
gs
Q
gd
td(on)
nA
nC
tr
td(off)
tf
nsec
V
SD
t
rr
Q
RR
C
iss
C
oss
C
rss
V
nsec
nC
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00175E
DOC
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