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1N4150W-G

产品描述Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小135KB,共3页
制造商Sangdest Microelectronics (Nanjing) Co Ltd
标准
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1N4150W-G概述

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-2

1N4150W-G规格参数

参数名称属性值
是否Rohs认证符合
包装说明R-PDSO-G2
Reach Compliance Codeunknow
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-G2
元件数量1
端子数量2
最大输出电流0.2 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.41 W
认证状态Not Qualified
最大重复峰值反向电压50 V
最大反向恢复时间0.004 µs
表面贴装YES
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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SENSITRON
SEMICONDUCTOR
Data Sheet 2772, Rev. -
Features
!
!
!
!
!
High Conductance
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Application
C
Plastic Material – UL Recognition Flammability
Classification 94V-O
E
1N4150W / 1N4151W
SURFACE MOUNT FAST SWITCHING DIODE
A
Dim
A
B
3.6
2.5
1.4
0.5
0.4
SOD-123
Min
Max
3.9
2.8
1.8
0.7
0.2
0.12
Min
Max
0.14 0.154
0.098 0.110
0.055 0.070
0.020 0.028
0.016
0.008
0.005
D
B
C
D
E
G
Mechanical Data
!
!
!
!
!
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams (approx.)
Marking: 1N4150W A4
1N4151W
A5
@T
A
=25°C unless otherwise specified
H
G
H
J
0.95
1.35 0.037 0.053
In inch
J
In mm
Maximum Ratings
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t = 1.0µs
@ t = 1.0s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
θJA
T
j
, T
STG
1N4150W
50
50
35
400
200
4.0
1.0
410
300
-65 to +150
1N4151W
75
Unit
V
V
V
300
150
2.0
0.5
500
mA
mA
A
mW
K/W
°C
Electrical Characteristics
Characteristic
Forward Voltage Drop (Note 4)
Peak Reverse Leakage Current
@T
A
=25°C unless otherwise specified
Symbol
V
FM
@ V
R
= 50V
I
RM
C
j
t
rr
1N4150W
1.0
100
2.5
4.0
1N4151W
Unit
V
50
2.0
2.0
nA
pF
nS
Typical Junction Capacitance (V
R
= 0V DC, f = 1.0MHz)
Reverse Recovery Time (Note 2, 3)
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. 1N4150W: Measured with I
F
= I
R
= 200mA, I
RR
= 0.1 x I
R
, R
L
= 100Ω.
3. 1N4151W: Measured with I
F
= I
R
= 10mA, I
RR
= 1.0 x I
R
, R
L
= 100Ω.
4. 1N4150W: Measured with I
F
= 200mA. 1N4151W: Measured with I
F
= 10mA
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com

 
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