Datasheet> 器件分类 > 分立半导体> 晶体管> SFF50N20M

文档预览

SFF50N20M: 产品描述50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET; 产品类别分立半导体晶体管; 文件大小56KB，共2页; 制造商SSDI; 官网地址http://www.ssdi-power.com/

下载文档详细参数选型对比全文预览

SFF50N20M概述

50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET

SFF50N20M规格参数

参数名称	属性值
厂商名称	SSDI
零件包装代码	TO-254
包装说明	FLANGE MOUNT, S-MSFM-P3
针数	3
Reach Compliance Code	compli
ECCN代码	EAR99
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (ID)	50 A
最大漏源导通电阻	0.055 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-254AA
JESD-30 代码	S-MSFM-P3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
封装主体材料	METAL
封装形状	SQUARE
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	NO
端子形式	PIN/PEG
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON

文档预览

下载PDF文档

全文
预览

PRELIMINARY

SOLID STATE DEVICES, INC.

14830 Valley View Av. * La Mirada, Ca 90670

Phone: (562) 404-7855 * Fax: (562) 404-1773

SFF50N20M

SFF50N20Z

50 AMPS

200 VOLTS

0.055

N-CHANNEL

POWER MOSFET

TO-254 (M)

TO-254Z (Z)

DESIGNER'S DATA SHEET

FEATURES:

Rugged construction with polysilicon gate

Low RDS (on) and high transconductance

Excellent high temperature stability

Very fast switching speed

Fast recovery and superior dv/dt performance

Increased reverse energy capability

Low input and transfer capacitance for easy paralleling

Hermetically sealed package

TX, TXV, and Space Level screening available

Replaces: IXTH50N20 Types

MAXIMUM RATINGS

CHARACTERISTIC

Drain to Source Voltage

Gate to Source Voltage

Continuous Drain Current

Operating and Storage Temperature

Thermal Resistance, Junction to Case

Total Device Dissipation

CASE OUTLINE: TO-254 (Sufix M)

@ TC = 25

@ TC = 55

SYMBOL

& T

stg

2JC

VALUE

200

±20

-55 to +150

0.83

150

114

UNIT

Volts

Amps

C/W

Watts

CASE OUTLINE: TO-254Z (Sufix Z)

NOTE:

All specifications are subject to change without notification.

SCDs for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00129E

SFF50N20M相似产品对比

	SFF50N20M	SFF50N20Z
描述	50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET	50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET
厂商名称	SSDI	SSDI
零件包装代码	TO-254	TO-254Z
包装说明	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
针数	3	3
Reach Compliance Code	compli	compli
ECCN代码	EAR99	EAR99
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	200 V
最大漏极电流 (ID)	50 A	50 A
最大漏源导通电阻	0.055 Ω	0.055 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	S-MSFM-P3	S-MSFM-P3
元件数量	1	1
端子数量	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL
封装形状	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON

推荐资源

CW117组成的输出电流从零调起的恒流源电路

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多