Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF40N30M
SFF40N30Z
DESIGNER’S DATA SHEET
Part Number / Ordering Information
SFF40N30 __ __ __
1/
¦ ¦ +
Screening
2/
__
= Not Screen
¦ ¦
TX = TX Level
¦ ¦
TXV = TXV Level
¦ ¦
S = S Level
¦ ¦
¦ +
Lead Option
3/
__
= Straight Leads
¦
DB = Down Bend
¦
UB = Up Bend
¦
+
Package
3/
M = TO-254
40 AMP / 300 Volts
0.10
Ω
N-Channel Power MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals for Improved Hermeticity
Hermetically Sealed Package
TX, TXV, Space Level Screening Available
Replacement for IXTH40N30 Types
Z = TO-254Z
•
•
•
•
•
•
•
•
•
•
•
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Collector Current
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
TO-254 (M)
TO-254Z (Z)
Symbol
V
DS
V
GS
I
D
T
C
= 25ºC
T
C
= 55ºC
P
D
Top & Tstg
R
θJC
Value
300
±20
40
150
114
-55 to +150
0.83
Units
Volts
Volts
Amps
W
ºC
ºC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00141E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF40N30M
SFF40N30Z
Electrical Characteristics @ T
J
= 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250
µA)
Drain to Source On State Resistance
(VGS=10 V, ID=50% Rated ID)
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=10V)
Gate Threshold Voltage
(VDS=VGS, ID= 4mA)
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
T
J
=25ºC
IF=10A
Di/dt=100A/µsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
At rated VGS
VGS=10 Volts
50% rated VDS
50% Rated ID
VDD=50% Rated VDS
50% Rated ID
RG= 2.0Ω
VGS=10 Volts
Symbol
BV
DSS
R
DS(on)
I
D(on)
V
GS(th)
g
fs
I
DSS
Min
300
––
40
2.0
15
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
––
––
––
––
25
––
––
––
––
177
28
78
30
60
175
45
––
––
––
4800
745
283
Max
––
0.10
––
4.0
––
250
1000
+100
-100
200
50
105
50
90
250
90
1.5
325
––
––
––
––
Units
Volts
Ω
A
V
mho
µA
I
GSS
Q
g
Q
gs
Q
gd
td(on)
nA
nC
tr
td(off)
tf
nsec
V
SD
t
rr
Q
RR
C
iss
C
oss
C
rss
V
nsec
nC
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
Available Part Numbers:
SFF40N30M; SFF40N30MDB; SFF40N30MUB;
SFF40N30Z; SFF40N30ZDB; SFF40N0ZUB;
PIN ASSIGNMENT (Standard)
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF40N30M
SFF40N30Z
Case Outline: TO-254 (M)
Ø.149
.139
.800
.790
.500 MIN
.545
.535
.155
.145
PIN 3
.545
.535
PIN 2
.305
.295
PIN 1
3x Ø.045
.035
.675±.010
.260
.240
.155
.140
.050
.040
SUFFIX: M
SUFFIX: MD
SUFFIX: MU
2x .190
.150
SUFFIX: MDB
SUFFIX: MDB
Case Outline: TO-254Z (Z)
2x Ø.150
.140
.545
.535
2x .140
.125
.555
.500
2x .275
.255
2x .155
.145
PIN 3
1.090 .820 .545
1.050 .790 .535
PIN 2
.305
.295
PIN 1
3x .045
.035
SUFFIX: Z
.285
.265
2x .275
.255
.260
.240
.055
.035
.155
.135
2x .190
.150
.170
MIN
.170
MIN
SUFFIX: ZD
SUFFIX: ZU
SUFFIX: ZDB
SUFFIX: ZUB
2x .190
.150