DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BF485PN
NPN/PNP high voltage transistors
Product specification
2000 Aug 02
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
FEATURES
•
High voltage (max. 350 V)
•
Low current (max. 200 mA)
•
High power dissipation (600 mW)
•
Two independently working transistors.
APPLICATIONS
•
Complementary high-voltage configurations
•
Hook switch in telephone applications.
DESCRIPTION
NPN/PNP transistors in a SOT457 (SC-74) plastic
package.
MARKING CODE
TYPE NUMBER
BF485PN
CODE
HS
1
Top view
2
3
6
handbook, halfpage
5
4
6
BF485PN
PINNING
PIN
1 and 4
5 and 2
6 and 3
DESCRIPTION
emitter TR1; TR2
base TR1; TR2
collector TR1; TR2
5
4
TR1
TR2
1
2
3
MAM439
Fig.1 Simplified outline (SOT457) and symbol
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
total power dissipation
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature range
open emitter
open base
open collector
350
350
6
100
200
600
+150
150
+150
V
V
V
mA
mA
mW
°C
°C
°C
2000 Aug 02
2
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
from junction to ambient
CONDITIONS
in free air; note 1
BF485PN
VALUE
208
UNIT
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
60
50
−
−
−
50
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
collector-base cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
saturation voltage
collector capacitance
transition frequency
I
E
= 0; V
CB
= 300 V;
I
E
= 0; V
CB
= 250 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 30 mA; V
CE
= 10 V
I
C
= 20 mA; I
B
= 2 mA
I
C
= 20 mA; I
B
= 2 mA
I
E
= I
e
= 0; V
CB
= 20 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz
50
50
100
−
−
250
850
6
−
mV
mV
pF
MHz
nA
µA
nA
handbook, halfpage
300
MLD391
handbook, halfpage
(6)
200
MLD392
(5)
(4)
(3)
(2)
(1)
hFE
(1)
IC
(mA)
150
(7)
(8)
200
(2)
100
(9)
(10)
100
(3)
50
0
10
−1
1
10
IC (mA)
10
2
0
0
TR1 (NPN).
2
4
6
8
10
VCE (V)
TR1 (NPN);
V
CE
= 10 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
(1)
(2)
(3)
(4)
I
B
= 30 mA.
I
B
= 27 mA.
I
B
= 24 mA.
I
B
= 21 mA.
(5) I
B
= 18 mA.
(6) I
B
= 15 mA.
(7) I
B
= 12 mA.
(8) I
B
= 9 mA.
(9) I
B
= 6 mA.
(10) I
B
= 3 mA.
Fig.2
DC current gain as a function of collector
current: typical values.
Fig.3
Collector current as a function of
collector-emitter voltage; typical values.
2000 Aug 02
3
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
MLD393
1000
handbook, halfpage
VBE
(mV)
800
(2)
(1)
handbook, halfpage
1000
MLD394
VBEsat
(mV)
800
(1)
600
(3)
(2)
600
400
(3)
400
200
0
10
−1
TR1 (NPN);
V
CE
= 10 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
1
10
IC (mA)
10
2
200
10
−1
1
10
IC (mA)
10
2
TR1 (NPN);
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Base-emitter voltage as a function of
collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current.
10
3
handbook, halfpage
MLD395
handbook, halfpage
300
MLD396
VCEsat
(mV)
hFE
(1)
200
(1)
10
2
(2)
(2)
(3)
100
(3)
10
10
−1
1
10
IC (mA)
10
2
0
−10
−1
−1
−10
IC (mA)
−10
2
TR1 (NPN);
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
TR2 (PNP);
V
CE
=
−10
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.6
Collector-emitter saturation voltage as a
function of collector current: typical values.
Fig.7
DC current gain as a function of collector
current: typical values.
2000 Aug 02
4
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
handbook, halfpage
(6)
−200
IC
(mA)
MLD397
(5)
(4)
(3)
(2)
(1)
−1000
handbook, halfpage
VBE
(mV)
−800
MLD398
(1)
−150
(7)
(8)
(2)
−600
(3)
−100
(9)
(10)
−400
−50
−200
0
0
TR2 (PNP).
(1) I
B
=
−50
mA.
(2) I
B
=
−45
mA.
(3) I
B
=
−40
mA.
(4) I
B
=
−35
mA.
−2
−4
−6
−8
−10
VCE (V)
0
−10
−1
−1
−10
IC (mA)
−10
2
TR2 (PNP);
V
CE
=
−10
V.
(5) I
B
=
−30
mA.
(6) I
B
=
−25
mA.
(7) I
B
=
−20
mA.
(8) I
B
=
−15
mA.
(9) I
B
=
−10
mA.
(10) I
B
=
−5
mA.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.8
Collector current as a function of
collector-emitter voltage; typical values.
Fig.9
Base-emitter voltage as a function of
collector current; typical values.
handbook, halfpage
−1000
(mV)
−800
MLD399
−10
3
handbook, halfpage
MLD400
VBEsat
(1)
VCEsat
(mV)
(2)
(1)
−600
−10
2
(2)
(3)
(3)
−400
−200
−10
−1
−1
−10
IC (mA)
−10
2
−10
−10
−1
−1
−10
IC (mA)
−10
2
TR2 (PNP);
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
TR2 (PNP);
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.10 Base-emitter saturation voltage as a
function of collector current.
Fig.11 Collector-emitter saturation voltage as a
function of collector current: typical values.
2000 Aug 02
5
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