256X8 MULTI-PORT SRAM, CDFP42, FP-42
参数名称 | 属性值 |
厂商名称 | Renesas(瑞萨电子) |
零件包装代码 | DFP |
包装说明 | DFP, |
针数 | 42 |
Reach Compliance Code | unknown |
ECCN代码 | 3A001.A.2.C |
最长访问时间 | 500 ns |
JESD-30 代码 | R-XDFP-F42 |
JESD-609代码 | e4 |
长度 | 26.925 mm |
内存密度 | 2048 bit |
内存集成电路类型 | MULTI-PORT SRAM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 42 |
字数 | 256 words |
字数代码 | 256 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 256X8 |
封装主体材料 | UNSPECIFIED |
封装代码 | DFP |
封装形状 | RECTANGULAR |
封装形式 | FLATPACK |
并行/串行 | PARALLEL |
认证状态 | Not Qualified |
筛选级别 | MIL-PRF-38535 Class V |
座面最大高度 | 2.54 mm |
最大供电电压 (Vsup) | 5.25 V |
最小供电电压 (Vsup) | 4.75 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | GOLD |
端子形式 | FLAT |
端子节距 | 1.27 mm |
端子位置 | DUAL |
总剂量 | 100k Rad(Si) V |
宽度 | 16.255 mm |
Base Number Matches | 1 |
5962R9676602VYX | 5962R9676602VXX | 5962R9676601QXX | 5962R9676601VXX | 5962R9676602QYX | 5962R9676602QXX | 5962R9676601QYX | 5962R9676601VYX | 5962-01-363-9538 | |
---|---|---|---|---|---|---|---|---|---|
描述 | 256X8 MULTI-PORT SRAM, CDFP42, FP-42 | 256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40 | 256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40 | 256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40 | 256X8 MULTI-PORT SRAM, CDFP42, FP-42 | 256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40 | 256X8 MULTI-PORT SRAM, CDFP42, FP-42 | 256X8 MULTI-PORT SRAM, CDFP42, FP-42 | 5962-01-363-9538 |
厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | not_compliant |
JESD-30 代码 | R-XDFP-F42 | R-CDIP-T40 | R-CDIP-T40 | R-CDIP-T40 | R-XDFP-F42 | R-CDIP-T40 | R-XDFP-F42 | R-XDFP-F42 | R-XDIP-T40 |
端子数量 | 42 | 40 | 40 | 40 | 42 | 40 | 42 | 42 | 40 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
封装主体材料 | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | UNSPECIFIED | CERAMIC |
封装代码 | DFP | DIP | DIP | DIP | DFP | DIP | DFP | DFP | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLATPACK | IN-LINE | IN-LINE | IN-LINE | FLATPACK | IN-LINE | FLATPACK | FLATPACK | IN-LINE |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
筛选级别 | MIL-PRF-38535 Class V | MIL-PRF-38535 Class V | MIL-PRF-38535 Class Q | MIL-PRF-38535 Class V | MIL-PRF-38535 Class Q | MIL-PRF-38535 Class Q | MIL-PRF-38535 Class Q | MIL-PRF-38535 Class V | 38535Q/M;38534H;883B |
表面贴装 | YES | NO | NO | NO | YES | NO | YES | YES | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子形式 | FLAT | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | FLAT | THROUGH-HOLE | FLAT | FLAT | THROUGH-HOLE |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
零件包装代码 | DFP | DIP | DIP | DIP | DFP | DIP | DFP | DFP | - |
包装说明 | DFP, | DIP, | DIP, | DIP, | DFP, | DIP, | DFP, | DFP, | - |
针数 | 42 | 40 | 40 | 40 | 42 | 40 | 42 | 42 | - |
ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | - |
最长访问时间 | 500 ns | 500 ns | 500 ns | 500 ns | 500 ns | 500 ns | 500 ns | 500 ns | - |
JESD-609代码 | e4 | e4 | e4 | e4 | e4 | e4 | e4 | e4 | - |
内存密度 | 2048 bit | 2048 bit | 2048 bit | 2048 bit | 2048 bit | 2048 bit | 2048 bit | 2048 bit | - |
内存集成电路类型 | MULTI-PORT SRAM | MULTI-PORT SRAM | MULTI-PORT SRAM | MULTI-PORT SRAM | MULTI-PORT SRAM | MULTI-PORT SRAM | MULTI-PORT SRAM | MULTI-PORT SRAM | - |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | - |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
字数 | 256 words | 256 words | 256 words | 256 words | 256 words | 256 words | 256 words | 256 words | - |
字数代码 | 256 | 256 | 256 | 256 | 256 | 256 | 256 | 256 | - |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - |
组织 | 256X8 | 256X8 | 256X8 | 256X8 | 256X8 | 256X8 | 256X8 | 256X8 | - |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | - |
最大供电电压 (Vsup) | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | - |
最小供电电压 (Vsup) | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | - |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | - |
端子面层 | GOLD | GOLD | GOLD | GOLD | GOLD | GOLD | GOLD | GOLD | - |
端子节距 | 1.27 mm | - | - | - | 1.27 mm | - | 1.27 mm | 1.27 mm | 2.54 mm |
总剂量 | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | - |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
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