SMD Efficient Fast Recovery Rectifier
CEFB101-G Thru CEFB105-G (RoHS Device)
Reverse Voltage: 50 ~ 600 Volts
Forward Current: 1.0 Amp
Features:
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0.
Super fast recovery time for high efficient
Built-in strain relief
Low forward voltage drop
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
SMB / DO-214AA
Mechanical Data:
Case: JEDEC DO-214AA molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode end
Approx. Weight: 0.063 gram
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
0.008(0.20)
0.203(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics:
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
Max. Average Forward Current
Max. Instantaneous Forward Voltage
at 1.0A
Reverse recovery time
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25
o
C
Ta=100
o
C
Max. Thermal Resistance (Note1)
Max. Operating Junction Temperature
Storage Temperature
Symbol
CEFB101-G
50
50
35
CEFB102-G
100
100
70
CEFB103-G CEFB104-G CEFB105-G
200
200
140
400
400
280
600
600
420
Unit
V
V
V
V
RRM
V
DC
V
RMS
I
FSM
I
o
V
F
T
rr
I
R
R
JL
30
A
1.0
0.875
25
1.1
35
1.25
50
A
V
nS
uA
o
C/W
o
o
5.0
200
13
150
-55 to +150
T
j
T
STG
C
C
Note1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm
2
copper pad areas.
“
-G
”
suffix designates RoHS compliant Version
Page1
SMD Efficient Fast Recovery Rectifier
Rating and Characteristic Curves (CEFB101-G Thru CEFB105-G)
Fig.1- Reverse Characteristics
100
10
CEFB101-G ~ 103-G
Fig.2 - Forward Characteristics
Reverse Current (uA)
Forward Current (A)
CEFB104-G
1.0
10
1.0
0.1
CEFB105-G
0.1
0.01
Pulse width 300uS
4% duty cycle
0.01
0
15
30
45
60
75
90
105 120 135
150
0.001
0
0.2
0.4
0.6 0.8
1.0 1.2
1.4
1.6 1.8
2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig. 3 - Junction Capacitance
Fig.4 - Non Repetitive Forward
Surge Curre
Peak Surge Forward Current (A)
100
Number of Cycles at 60Hz
f=1MHz and applied
4VDC reverse voltage
Junction Capacitance (pF)
CEFB104-G ~ 105-G
CEFB104-G ~ 105-G
0.01
0.1
1.0
10
Fig.5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
trr
NONINDUCTIVE
NONINDUCTIVE
Fig. 6 - Current Derating Curve
D.U.T.
OSCILLISCOPE
Single Phase
Half Wave 60Hz
1cm
NOTES: 1. Rise Times = 7ns max., Input Impedance = 1 megohm.22pF.
2. Rise Time = 10ns max., Source Impedance = 50 ohms.
SET TIME BASE FOR
50 / 10ns / cm
0
25
50
75
100
125 150
175
Ambient Temperature
“-G” suffix designates RoHS compliant Version
Page2
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