74ABT126
Quad buffer; 3-state
Rev. 04 — 17 February 2005
Product data sheet
1. General description
The 74ABT126 high-performance BiCMOS device combines low static and dynamic
power dissipation with high speed and high output drive.
The 74ABT126 device is a quad buffer that is ideal for driving bus lines. The device
features four output enable inputs (nOE each controlling one of the 3-state outputs (nY).
2. Features
s
s
s
s
s
s
s
Quad bus interface
3-state buffers
Live insertion and extraction permitted
Output capability: +64 mA and
−32
mA
Inputs are disabled during 3-state mode
Power-up 3-state
Latch-up protection:
x
JESD78: exceeds 500 mA
s
ESD protection:
x
MIL STD 883 method 3015: exceeds 2000 V
x
Machine model: exceeds 200 V
3. Quick reference data
Table 1:
Quick reference data
T
amb
= 25
°
C; GND = 0 V.
Symbol Parameter
t
PLH
t
PHL
C
I
C
O
I
CC
Conditions
Min
-
-
-
-
-
Typ
2.9
3.0
4
7
65
Max
-
-
-
-
-
Unit
ns
ns
pF
pF
µA
propagation delay nA to nY C
L
= 50 pF; V
CC
= 5 V
propagation delay nA to nY C
L
= 50 pF; V
CC
= 5 V
input capacitance
output capacitance
quiescent supply current
V
I
= 0 V or V
CC
outputs disabled;
V
O
= 0 V or V
CC
outputs 3-state;
V
CC
= 5.5 V
Philips Semiconductors
74ABT126
Quad buffer; 3-state
4. Ordering information
Table 2:
Ordering information
Package
Temperature range
74ABT126D
74ABT126DB
−40 °C
to +85
°C
−40 °C
to +85
°C
Name
SO14
SSOP14
TSSOP14
Description
plastic small outline package; 14 leads;
body width 3.9 mm
plastic shrink small outline package; 14 leads;
body width 5.3 mm
plastic thin small outline package; 14 leads;
body width 4.4 mm
Version
SOT108-1
SOT337-1
SOT402-1
Type number
74ABT126PW
−40 °C
to +85
°C
5. Functional diagram
2
1A
1Y
3
2
1
EN1
1
3
1
1OE
5
2A
2Y
6
5
6
4
2OE
9
3A
4
3Y
8
9
8
10
4Y
11
10
3OE
12
4A
12
11
13
4OE
001aac482
13
001aac483
Fig 1. Logic symbol
Fig 2. IEC logic symbol
6. Pinning information
6.1 Pinning
1OE
1A
1
2
3
4
5
6
7
001aac484
14 V
CC
13
4OE
12
4A
1Y
2OE
2A
126
11 4Y
10
3OE
9
8
3A
2Y
GND
3Y
Fig 3. Pin configuration
9397 750 14597
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 February 2005
2 of 15
Philips Semiconductors
74ABT126
Quad buffer; 3-state
6.2 Pin description
Table 3:
Symbol
1OE
1A
1Y
2OE
2A
2Y
GND
3Y
3A
3OE
4Y
4A
4OE
V
CC
Pin description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Description
1 output enable input
1 data input
1 data output
2 output enable input
2 data input
2 data output
ground (0 V)
3 data output
3 data input
3 output enable input
4 data output
4 data input
4 output enable input
supply voltage
7. Functional description
7.1 Function table
Table 4:
Input
nOE
H
H
L
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
Function table
[1]
Output
nA
L
H
X
nY
L
H
Z
9397 750 14597
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 February 2005
3 of 15
Philips Semiconductors
74ABT126
Quad buffer; 3-state
8. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
T
j
T
stg
[1]
[2]
Parameter
supply voltage
input voltage
output voltage
input diode current
output diode current
output current
junction temperature
storage temperature
Conditions
[1]
Min
−0.5
−1.2
−0.5
-
-
-
[2]
Max
+7.0
+7.0
+5.5
−18
−50
128
150
+150
Unit
V
V
V
mA
mA
mA
°C
°C
output in OFF-state or
HIGH-state
V
I
< 0 V
V
O
< 0 V
output in LOW-state
[1]
-
−65
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
The performance capability of a high-performance integrated circuit in conjunction with its thermal
environment can create junction temperatures which are detrimental to reliability.
9. Recommended operating conditions
Table 6:
Symbol
V
CC
V
I
V
IH
V
IL
I
OH
I
OL
∆t/∆V
T
amb
Recommended operating conditions
Parameter
supply voltage
input voltage
HIGH-level input voltage
LOW-level input voltage
HIGH-level output current
LOW-level output current
input transition rise or fall rate
ambient temperature
in free air
Conditions
Min
4.5
0
2.0
-
-
-
0
−40
Typ
-
-
-
-
-
-
-
-
Max
5.5
V
CC
-
0.8
−32
64
10
+85
Unit
V
V
V
V
mA
mA
ns/V
°C
9397 750 14597
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 February 2005
4 of 15
Philips Semiconductors
74ABT126
Quad buffer; 3-state
10. Static characteristics
Table 7:
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
IK
V
OH
input clamp voltage
HIGH-level output voltage
V
CC
= 4.5 V; I
IK
=
−18
mA
V
CC
= 4.5 V; V
I
= V
IL
or V
IH
I
OH
=
−3
mA
I
OH
=
−32
mA
V
CC
= 5.0 V; V
I
= V
IL
or V
IH
I
OH
=
−3
mA
V
OL
I
LI
I
OFF
I
PU
, I
PD
I
OZ
LOW-level output voltage
input leakage current
power-off leakage current
power-up or power-down
down 3-state output current
3-state output current
V
CC
= 4.5 V; V
I
= V
IL
or V
IH
I
OL
= 64mA
V
CC
= 5.5 V; V
I
= GND or 5.5 V
V
CC
= 0 V; V
O
or V
I
≤
4.5 V
V
CC
= 2.1 V; V
O
= 0.5 V; V
I
= GND or V
CC
;
V
OE
= don’t care
V
CC
= 5.5 V; V
I
= V
IL
or V
IH
output HIGH-state at V
O
= 2.7 V
output LOW-state at V
O
= 0.5 V
I
CEX
I
O
I
CC
output HIGH-state leakage
current
output current
quiescent supply current
V
CC
= 5.5 V; V
O
= 5.5 V; V
I
= GND or V
CC
V
CC
= 5.5 V; V
O
= 2.5 V
V
CC
= 5.5 V; V
I
= GND or V
CC
outputs HIGH-state
outputs LOW-state
outputs 3-state
∆I
CC
additional supply current
per data input pin
one data input at 3.4 V and other inputs at
V
CC
or GND; V
CC
= 5.5 V
outputs enabled
outputs 3-state
per enable input pin
one enable input at 3.4 V and other inputs at
V
CC
or GND; V
CC
= 5.5 V
outputs 3-state
C
I
C
O
V
IK
input capacitance
output capacitance
input clamp voltage
V
I
= 0 V or V
CC
outputs disabled; V
O
= 0 V or V
CC
V
CC
= 4.5 V; I
IK
=
−18
mA
[3]
[3]
[2]
[1]
Conditions
Min
-
2.5
2.0
3.0
-
-
-
-
Typ
−0.9
2.9
2.4
3.4
0.35
±5.0
±5.0
Max
−1.2
-
-
-
0.55
±100
±50
Unit
V
V
V
V
V
µA
µA
µA
±0.01 ±1.0
-
-
-
−50
-
-
-
1.0
−1.0
5.0
−100
65
12
65
50
−50
50
−180
250
15
250
µA
µA
µA
mA
µA
mA
µA
-
-
0.5
50
1.5
250
mA
µA
-
-
-
-
0.5
4
7
-
1.5
-
-
−1.2
mA
pF
pF
V
T
amb
=
−40 °C
to +85
°C
9397 750 14597
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 February 2005
5 of 15
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
