S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
S波段, 硅, NPN, 射频小信号晶体管
参数名称 | 属性值 |
端子数量 | 3 |
晶体管极性 | NPN |
最大集电极电流 | 0.0650 A |
最大集电极发射极电压 | 10 V |
加工封装描述 | LEAD FREE, PLASTIC PACKAGE-3 |
状态 | ACTIVE |
包装形状 | RECTANGULAR |
包装尺寸 | SMALL OUTLINE |
表面贴装 | Yes |
端子形式 | GULL WING |
端子位置 | DUAL |
包装材料 | PLASTIC/EPOXY |
结构 | SINGLE |
元件数量 | 1 |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
最大环境功耗 | 0.2000 W |
晶体管类型 | RF SMALL SIGNAL |
最高频带 | S BAND |
额定交叉频率 | 9000 MHz |
最大集电极基极电容 | 0.9000 pF |
NE68100 | NE681 | NE68118-T1 | NE68119-T1 | NE68139R-T1 | NE68139-T1 | NE68133-T1B | NE68130-T1 | |
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描述 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
晶体管极性 | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
最大集电极电流 | 0.0650 A | 0.0650 A | 0.0650 A | 0.0650 A | 0.0650 A | 0.0650 A | 0.0650 A | 0.0650 A |
最大集电极发射极电压 | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V |
加工封装描述 | LEAD FREE, PLASTIC PACKAGE-3 | LEAD FREE, PLASTIC PACKAGE-3 | LEAD FREE, PLASTIC PACKAGE-3 | LEAD FREE, PLASTIC PACKAGE-3 | LEAD FREE, PLASTIC PACKAGE-3 | LEAD FREE, PLASTIC PACKAGE-3 | LEAD FREE, PLASTIC PACKAGE-3 | LEAD FREE, PLASTIC PACKAGE-3 |
状态 | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
包装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
包装尺寸 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
表面贴装 | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
结构 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
最大环境功耗 | 0.2000 W | 0.2000 W | 0.2000 W | 0.2000 W | 0.2000 W | 0.2000 W | 0.2000 W | 0.2000 W |
晶体管类型 | RF SMALL SIGNAL | RF SMALL SIGNAL | RF SMALL SIGNAL | RF SMALL SIGNAL | RF SMALL SIGNAL | RF SMALL SIGNAL | RF SMALL SIGNAL | RF SMALL SIGNAL |
最高频带 | S BAND | S BAND | S BAND | S BAND | S BAND | S BAND | S BAND | S BAND |
额定交叉频率 | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz | 9000 MHz |
最大集电极基极电容 | 0.9000 pF | 0.9000 pF | 0.9000 pF | 0.9000 pF | 0.9000 pF | 0.9000 pF | 0.9000 pF | 0.9000 pF |
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