Monolithic PIN SP5T Diode Switch
FEATURES
•
•
•
•
•
•
Ultra Broad Bandwidth: 50MHz to 26GHz
1.0 dB Insertion Loss
30 dB Isolation at 20GHz
Reliable.
Fully Monolithic
Glass Encapsulated Construction
MASW-005100-1194
Rev 1
DESCRIPTION
The MASW-005100-1194 is a SP5T Series-Shunt
broad band switch made with M/A-COM’s HMIC
TM
(Heterolithic Microwave Integrated Circuit) process,
US Patent 5,268,310. This process allows the
incorporation of silicon pedestals that form series and
shunt diodes or vias by imbedding them in a low loss,
low dispersion glass. This hybrid combination of
Silicon and Glass gives HMIC Switches exceptional
low loss and remarkable high isolation through low
millimeter-wave frequencies.
APPLICATIONS
These high performance switches are suitable for the
use in multi-band ECM, Radar, and instrumentation
control circuits where high isolation to insertion loss
ratios are required. With a standard +5 V/-5 V, TTL
controlled PIN diode driver, 50ns switching speeds are
achieved.
ABSOLUTE MAXIMUM RATINGS
T
AMB
= +25°C (
Unless otherwise specified
)
PARAMETER
OPERATING TEMPERATURE
STORAGE TEMPERATURE
RF C.W. INCIDENT POWER
(± 20 mA )
BIAS CURRENT
( FORWARD )
APPLIED VOLTAGE
( REVERSE )
VALUE
- 65°C to +150°C
- 65°C to +175°C
+33dBm
± 20mA
- 25V
Note:
Exceeding any of these values may result in permanent
damage.
Maximum operating conditions for combination of
RF power, D.C. bias and temperature: +30dBm C.W.,
15mA per diode @+85°C
1
SP5T Monolithic Pin Diode Switch
005100-1194
MASW-
Rev 1
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL ( DC CURRENT )
CONDITION OF RF OUTPUT
J2
-20 mA
J3
+20 mA
-20 mA
J4
+20 mA
+20 mA
-20 mA
J5
+20 mA
+20 mA
+20 mA
-20 mA
J6
+20 mA
+20 mA
+20 mA
+20 mA
-20 mA
J2-J1
Low Loss
J3-J1
Isolation
Low Loss
J4-J1
Isolation
Isolation
Low Loss
J5-J1
Isolation
Isolation
Isolation
Low Loss
J6-J1
Isolation
Isolation
Isolation
Isolation
Low Loss
+20 mA
+20 mA
+20 mA
+20 mA
Isolation
Isolation
Isolation
Isolation
+20 mA
+20 mA
+20 mA
Isolation
Isolation
Isolation
+20 mA
+20 mA
Isolation
Isolation
+20 mA
Isolation
(on-wafer measurements)
Electrical Specifications @ T
AMB
= 25°C, ± 20 mA bias current
RF SPECIFICATIONS
PARAMETER
INSERTION LOSS
ISOLATION
INPUT RETURN LOSS
OUTPUT RETURN LOSS
SWITCHING SPEED
FREQUENCY
20GHz
20GHz
20GHz
20GHz
10GHz
1
MIN
TYP
0.9
MAX
UNITS
dB
dB
dB
dB
nS
1.4
28
38
22
23
50
Note:
1.) Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a
TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF - 560pF
and a resistor between 150Ω - 220Ω to achieve 50ns rise and fall times.
2
SP5T Monolithic Pin Diode Switch
MASW-005100-1194
Rev 1
Typical Microwave
Performance
INSERTION LOSS
0.000
LOSS ( dB )
-0.200
-0.400
-0.600
-0.800
-1.000
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
FREQUENCY ( GHz )
J2
J3
J4
J5
J6
ISOLATION
0
-10
-20
-30
-40
-50
-60
-70
-80
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
FREQUENCY ( GHz )
ISOLATION ( dB )
J2
J3
J4
J5
J6
3
SP5T Monolithic Pin Diode Switch
MASW-005100-1194
Rev 1
Typical Microwave
Performance
OUTPUT RETURN LOSS
0.000
-5.000
-10.000
-15.000
-20.000
-25.000
-30.000
-35.000
-40.000
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
FREQUENCY ( GHz )
LOSS ( dB )
J2
J3
J4
J5
J6
INPUT RET URN LO SS
0.
-5.
-10.
-15.
LO SS
-20.
(dB)
-25.
-30.
-35.
-40.
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
FREQ UENCY ( G Hz )
J2
J3
J4
J5
J6
4
SP5T Monolithic Pin Diode Switch
MASW-005100-1194
Rev 1
ASSEMBLY INSTRUCTIONS
Cleanliness
These chips should be handled in a clean environment free of organic contamination.
Electro-Static Sensitivity
The MASW-00 Series PIN switches are ESD, Class 1A sensitive (HBM). The proper ESD handling
procedures must be used.
Wire Bonding
Thermosonic wedge wire bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is
recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used.
Ultrasonic energy should be adjusted to the minimum required. RF bonds should be kept as short as
possible to minimize inductance.
Mounting
These chips have Ti-Pt-Au back metal. They can be die mounted with a 80Au/20Sn or electrically
conductive Ag epoxy. Mounting surface must be flat and clean of oils and contaminants.
Eu Eutectic Die Attachment
An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255°C
and a tool tip temperature of 265°C. When hot gas is applied, the tool tip temperature should be
290°C. The chip should not be exposed to temperatures greater than 320°C for more than 10
seconds. No more than three seconds should be required for the die attachment.
Epoxy Die Attachment
Assembly should be preheated to 125°C-150°C. A Controlled thickness of 2 mils is recommended for
best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the
chip after placement to ensure complete coverage. Cure epoxy per manufacturer’s recommended
schedule.
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