CMOS Static RAM
16K (16K x 1-Bit)
Features
IDT6167SA
IDT6167LA
OBSOLETE PART
◆
◆
◆
◆
◆
◆
◆
◆
High-speed (equal access and cycle time)
– Military: 25/35/45/55/70/85/100ns (max.)
– Commercial: 15/20/25ns (max.)
Low power consumption
Battery backup operation — 2V data retention voltage
(IDT6167LA only)
Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle
soft-error rates
Separate data input and output
Military product compliant to MIL-STD-883, Class B
Description
The lDT6167 is a 16,384-bit high-speed static RAM organized
as 16K x 1. The part is fabricated using IDT’s high-performance,
Functional Block Diagram
A
0
A
13
R
T O
R F
A D
P E
E D
T N
S
E E
L M IGN
O M S
S
B O DE
O EC
R EW
T N
O
N
V
CC
GND
ADDRESS
DECODE
16,384-BIT
MEMORY ARRAY
I/O CONTROL
CONTROL
LOGIC
high reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers
a reduced power standby mode. When
CS
goes HIGH, the circuit
will automatically go to, and remain in, a standby mode as long as
CS
remains HIGH. This capability provides significant system-level power
and cooling savings. The low-power (LA) version also offers a battery
backup data retention capability where the circuit typically consumes
only 1µW operating off a 2V battery.
All inputs and the output of the IDT6167 are TTL-compatible and
operate from a single 5V supply, thus simplifying system designs.
The IDT6167 is packaged in a space-saving 20-pin, 300 mil Plastic
DIP or CERDIP and a Plastic 20-pin providing high board-level packing
densities.
Military grade product is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally suited to
military temperature applications demanding the highest level of
performance and reliability.
D
IN
D
OUT
,
CS
WE
2981 drw 01
FEBRUARY 2001
1
©2000 Integrated Device Technology, Inc.
DSC-2981/08
IDT6167SA/LA
CMOS Static RAM 16K (16K x 1-Bit)
Military and Commercial Temperature Ranges
Pin Configurations
A
0
A
1
A
2
A
3
A
4
A
5
A
6
D
OUT
WE
GND
1
2
3
4
5
6
7
8
9
10
P20-1
D20-1
20
19
18
17
16
15
14
13
12
11
V
CC
A
13
A
12
A
11
A
10
A
9
A
8
A
7
D
IN
CS
2981 drw 02
Absolute Maximum Ratings
(1)
Symbol
V
TERM
Rating
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Com'l.
-0.5 to +7.0
Mil.
-0.5 to +7.0
Unit
V
T
A
T
BIAS
T
STG
P
T
0 to +70
-55 to +125
-55 to +125
1.0
50
-55 to +125
-65 to +135
-65 to +150
1.0
50
o
C
C
C
o
o
W
mA
2981 tbl 03
,
I
OUT
DIP
Top View
Pin Descriptions
Name
A
0
- A
13
CS
WE
V
CC
D
IN
D
OUT
GND
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
Description
Address Inputs
Chip Select
Write Enable
Power
DATA
IN
DATA
OUT
Ground
2981 tbl 01
Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
7
7
Unit
pF
pF
2981 tbl 04
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
Truth Table
(1)
Mode
Standby
Read
Write
CS
H
L
L
WE
X
H
L
Output
High-Z
DATA
OUT
High-Z
Power
Standby
Active
Active
2981 tbl 02
Recommended DC Operating
Conditions
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
____
____
Max.
5.5
0
6.0
0.8
Unit
V
V
V
V
2981 tbl 05
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't Care.
Recommended Operating
Temperature and Supply Voltage
Grade
Military
Commercial
Temperature
-55
O
C to +125
O
C
0
O
C to +70
O
C
GND
0V
0V
Vcc
5V ± 10%
5V ± 10%
2981 tbl 06
NOTE:
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
2
IDT6167SA/LA
CMOS Static RAM 16K (16K x 1-Bit)
Military and Commercial Temperature Ranges
DC Electrical Characteristics
(1)
Symbol
I
CC1
Parameter
Operating Power Supply Current
CS
< V
IL
, Outputs Open
V
CC
= Max., f
=
0
(3)
Dynamic Operating Current
CS
< V
IL
, Outputs Open
V
CC
= Max., f = f
MAX
(3)
Standby Power Supply Current (TTL Level)
CS
> V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(3)
(V
CC
= 5.0V ± 10%, V
LC
= 0.2V, V
HC
= V
CC
– 0.2V)
6167SA/LA15
Power
SA
LA
SA
LA
SA
LA
SA
LA
Com'l.
90
55
120
100
50
35
5
0.9
6167SA/LA20
Com'l.
90
55
100
80
35
30
5
0.05
6167SA/LA25
Com'l.
90
55
100
70
35
25
5
0.05
Mil.
90
60
100
75
35
25
10
0.9
2981 tbl 07
Unit
mA
I
CC2
mA
I
SB
mA
I
SB1
Full Standby Power Supply Current (CMOS Level)
CS
> V
HC
, V
CC
= Max.,
V
IN
> V
HC
or V
IN
< V
LC
, f = 0
(3)
mA
DC Electrical Characteristics
(1)
(con't.)
(V
CC
= 5.0V ± 10%, V
LC
= 0.2V, V
HC
= V
CC
– 0.2V)
6167SA/LA35
(2)
Symbol
I
CC1
Parameter
Operating Power Supply Current
CS
< V
IL
, Outputs Open
V
CC
= Max., f
=
0
(3)
Dynamic Operating Current
CS
< V
IL
, Outputs Open
V
CC
= Max., f = f
MAX
(3)
Standby Power Supply Current
(TTL Level)
CS
> V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(3)
Full Standby Power Supply
Current (CMOS Level)
CS
> V
HC
, V
CC
= Max.,
V
IN
> V
HC
or V
IN
< V
LC
, f = 0
(3)
Power
SA
LA
SA
LA
SA
LA
SA
LA
Mil.
90
60
100
70
35
20
10
0.9
6167SA/LA45
(2)
Mil.
90
60
100
65
35
20
10
0.9
6167SA/LA55
(2)
Mil.
90
60
100
60
35
20
10
0.9
6167SA/LA70
(2)
Mil.
90
60
100
60
35
15
10
0.9
2981 tbl 08
Unit
mA
I
CC2
mA
I
SB
mA
I
SB1
mA
NOTES:
1. All values are maximum guaranteed values.
2. –55°C to +125°C temperature range only. Also available; 85ns and 100ns Military devices.
3. f
MAX
= 1/t
RC
, only address inputs cycling at f
MAX
. f = 0 means no address inputs change.
6.42
3
IDT6167SA/LA
CMOS Static RAM 16K (16K x 1-Bit)
Military and Commercial Temperature Ranges
DC Electrical Characteristics
(V
CC
= 5.0V ± 10%)
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
IDT6167SA
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= Max.,
V
IN =
GND to V
CC
V
CC
= Max.,
CS
= V
IH
,
V
OUT
= GND to V
CC
I
OL
= 8mA, V
CC
= Min.
I
OH
= -4mA, V
CC
= Min.
MIL.
COM'L.
MIL.
COM'L.
Min.
____
____
____
____
____
IDT6167LA
Min.
____
____
____
____
____
Max.
10
5
10
5
0.4
____
Max.
5
2
5
2
0.4
____
Unit
µA
µA
V
V
2981 tbl 09
2.4
2.4
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (V
LC
= 0.2V, V
HC
= V
CC
– 0.2V)
Typ.
(1)
V
CC
@
Symbol
V
DR
I
CCDR
t
CDR
t
R
(3)
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
Test Condition
____
Max.
V
CC
@
3.0V
____
Min.
2.0
2.0V
____
2.0V
____
3.0V
____
Unit
V
μA
ns
ns
μA
2981 tbl 10
MIL.
COM'L.
CS
> V
HC
V
IN
> V
HC
or < V
LC
____
____
0.5
0.5
____
1.0
1.0
____
200
20
____
300
30
____
0
t
RC
(2)
____
____
____
____
____
I
I
LI
I
(3)
____
____
2
2
NOTES:
1. T
A
= +25°C.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
Low V
CC
Data Retention Waveform
DATA
RETENTION
MODE
V
CC
4.5V
V
DR
≥
2V
t
CDR
CS
V
DR
t
R
4.5V
V
IH
V
IH
2981 drw 03
,
4
IDT6167SA/LA
CMOS Static RAM 16K (16K x 1-Bit)
Military and Commercial Temperature Ranges
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
5V
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2981 tbl 11
5V
480Ω
DATA
OUT
255Ω
30pF*
480Ω
DATA
OUT
255Ω
5pF*
,
2981 drw 04
,
2981 drw 05
Figure 1. AC Test Load
*Includes scope and jig.
Figure 2. AC Test Load
(for t
CLZ
, t
CHZ
, t
WHZ
and t
OW
)
AC Electrical Characteristics
Symbol
Parameter
(V
CC
= 5.0V ± 10%, All Temperature Ranges)
6167SA15
(3)
Min.
Max.
6167SA20
(3)
/25
6167LA20
(3)
/25
Min.
Max.
6167SA35
(1)
/45
(1)
6167LA35
(1)
/45
(1)
Min.
Max.
6167SA55
(1)
/70
(1)
6167LA55
(1)
/70
(1)
Min.
Max.
Unit
Read Cycle
t
RC
t
AA
t
ACS
t
CLZ
(2)
t
CHZ
(2)
t
OH
t
PU
(2)
t
PD
(2)
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Deselect to Output in Low-Z
Chip Select to Output in High-Z
Output Hold from Address Change
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
15
____
____
____
20/25
____
____
____
35/45
____
____
____
55/70
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
15
15
____
20/25
20/25
____
35/45
35/45
____
55/70
55/70
____
3
____
5/5
____
5/5
____
5/5
____
10
____
____
10/10
____
____
15/30
____
____
40/40
____
____
3
0
____
5/5
0/0
____
5/5
0/0
____
5/5
0/0
____
15
20/25
35/45
55/70
Write Cycle
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ
(2)
t
OW
(2)
Write Cycle Time
Chip Select to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Data Hold Time
Write Enable to Output in High-Z
Output Active from End-of-Write
15
15
15
0
13
0
10
0
____
____
____
____
____
____
____
____
____
20/20
15/20
15/20
0/0
15/20
0/0
12/15
0/0
____
____
____
____
____
____
____
____
____
30/45
30/40
30/40
0/0
30/30
0/0
17/20
0/0
____
____
____
____
____
____
____
____
____
55/70
45/55
45/55
0/0
35/40
0/0
25/30
0/0
____
____
____
____
____
____
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2981 tbl 12
7
____
8/8
____
15/30
____
40/40
____
0
0/0
0/0
0/0
NOTES:
1. –55°C to +125°C temperature range only. Also available: 85ns and 100ns Military devices.
2. This parameter is guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
3. 0°C to +70°C temperature range only.
6.42
5
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