2.0-13.0 GHz 1.2 W Power Amplifier
MAAPGM0057-DIE
RO-P-DS-3089 A
Preliminary Information
Features
♦
♦
♦
♦
1.2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG™ Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0057-Die is a single-stage distributed power amplifier with
an on chip bias network. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier stage or as
a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
♦
♦
♦
♦
♦
SatCom
Test Instrumentation
Military EW/ECM
UltraWideband (UWB)
Point-to-Point
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50Ω, V
DD
= 10V, I
DQ
≈
510 mA
2
, P
in
= 25 dBm
Parameter
Bandwidth
Output Power
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Gate Supply Current
Drain Supply Current
Noise Figure
1.
2.
T
B
= MMIC Base Temperature
Adjust V
GG
between –2.5 to –1.4 V.
Symbol
f
P
OUT
P1dB
G
VSWR
VSWR
I
GG
I
DD
NF
Typical
2.0-13.0
31
30
7
2.2:1
2.2:1
< 5.0
< 900
8
mA
mA
dB
Units
GHz
dBm
dBm
dB
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-13.0 GHz 1.2 W Power Amplifier
Maximum Operating Conditions
3
Parameter
Input Power
Gate Supply Voltage
Drain Supply Voltage
Quiescent Drain Current (No RF, 40% Idss)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Die Attach Temperature
Symbol
P
IN
V
GG
V
DD
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
27.0
-3.5
+12.0
810
6.1
180
-55 to +150
310
MAAPGM0057-DIE
RO-P-DS-3089 A
Preliminary Information
Units
dBm
V
V
mA
W
°C
°C
°C
3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Gate Supply Voltage
Drain Supply Voltage
Input Power
Junction Temperature
Thermal Resistance
MMIC Base Temperature
Symbol
V
GG
V
DD
P
IN
T
J
Θ
JC
T
B
15
Note 4
Min
-2.5
4.0
Typ
-2
10.0
25.0
Max
-1.4
10.0
27.0
150
Unit
V
V
dBm
°C
°C/W
°C
4. Maximum MMIC Base Temperature = 150°C —Θ
JC
* V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 10 V.
3. Adjust
V
GG
to set I
DQ
, (approximately @ –2 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn V
GG
off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
2
Visit www.macom.com for additional data sheets and product information.
2.0-13.0 GHz 1.2 W Power Amplifier
MAAPGM0057-DIE
RO-P-DS-3089 A
Preliminary Information
50
45
40
5V
8V
10V
50
45
40
Output Power (dBm)
30
25
20
15
10
5
0
2
3
4
5
6
7
8
9
10
11
12
13
14
Output Power (dBm)
35
35
30
25
20
15
10
5
0
2
3
4
5
6
7
8
9
10
11
12
13
14
5V
8V
10V
Frequency (GHz)
Figure 1. 1dB Compression Point vs. Frequency and Drain Voltage at 25% IDSS.
Frequency (GHz)
Figure 2. Saturated Output Power vs. Frequency and Drain Voltage at 25% IDSS.
10
9
8
7
6
5
4
3
2
1
0
2
3
4
5
6
7
8
9
10
11
12
13
14
SSG
Input VSWR
Output VSWR
6.0
5.5
5.0
4.5
4.0
10
9
8
7
6
5
4
3
2
1
0
2
3
4
5
6
7
8
9
10
11
12
13
14
5V
8V
10V
Gain (dB)
3.5
3.0
2.5
2.0
1.5
1.0
Frequency (GHz)
Figure 3. Small Signal Gain and Input and Output VSWR at V
D
=8V.
Gain (dB)
VSWR
Frequency (GHz)
Figure 4. Small Signal Gain vs. Frequency and Drain Voltage.
10
9
8
7
Noise Figure (dB)
6
5
4
3
2
1
0
2
3
4
5
6
7
8
9
10
11
12
13
14
4V
5V
6V
Frequency (GHz)
Figure 5. Noise Figure vs. Frequency and Drain Voltage.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-13.0 GHz 1.2 W Power Amplifier
MAAPGM0057-DIE
RO-P-DS-3089 A
Preliminary Information
40
38
36
34
32
5V
8V
10V
1.00
0.90
0.80
0.70
5V
8V
10V
Output Power (dBm)
28
26
24
22
20
18
16
14
12
10
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Drain Current (A)
30
0.60
0.50
0.40
0.30
0.20
0.10
0.00
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Input Power (dBm)
Figure 6. Output Power vs. Input Power and Drain Voltage at 3 GHz.
Input Power (dBm)
Figure 7. Drain Current vs. Input Power and Drain Voltage at 3 GHz.
40
38
36
34
32
5V
8V
10V
1.00
0.90
0.80
0.70
5V
8V
10V
Output Power (dBm)
28
26
24
22
20
18
16
14
12
10
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Drain Current (A)
30
0.60
0.50
0.40
0.30
0.20
0.10
0.00
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Input Power (dBm)
Figure 8. Output Power vs. Input Power and Drain Voltage at 8 GHz.
Input Power (dBm)
Figure 9. Drain Current vs. Input Power and Drain Voltage at 8 GHz.
40
38
36
34
32
5V
8V
10V
1.00
0.90
0.80
0.70
5V
8V
10V
Output Power (dBm)
28
26
24
22
20
18
16
14
12
10
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Drain Current (A)
30
0.60
0.50
0.40
0.30
0.20
0.10
0.00
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Input Power (dBm)
Figure 10. Output Power vs. Input Power and Drain Voltage at 12 GHz.
Input Power (dBm)
Figure 11. Drain Current vs. Input Power and Drain Voltage at 12 GHz.
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-13.0 GHz 1.2 W Power Amplifier
MAAPGM0057-DIE
RO-P-DS-3089 A
Preliminary Information
Mechanical Information
Chip Size: 4.46 x 4.46 x 0.075 mm
0.202mm.
G ND: G
(
176 x 176 x 3 mils)
4.280mm.
4.457mm.
2.404mm.
4.461mm.
4.246mm.
GND :G
G N D:G
G N D:G
GND: G
VD
V
D
GND :G
V G_T
V
GT
4.284mm.
i
d = 25
i
d = 10 8
GND: G
GND: G
GND: G
GND: G
GN D:G
GN D:G
GN D:G
GND: G
GND: G
W = 20
S= 8
GND:G
GND:G
GND: G
GND: G
GND: G
GN D:G
GN D:G
GN D:G
GN D:G
GND: G
GND:G
GND :G
W =8
S =8
GND :G
GND :G
GND :G
2.230mm.
GND:G
GND :G
GND :G
GND :G
OUT
IN
2.230mm.
GND:G
GN D:G
GN D:G
0.214mm.
0
0
G ND: G
GND: G
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
Gate Supply Voltage V
GT
Gate Supply Voltage V
GB
Drain Supply Voltage V
DD
Size (μm)
100 x 150
100 x 100
150 x 150
150 x 150
Size (mils)
4x6
4x4
6x6
6x6
GN D:G
GN D:G
GND:G
GND: G
GND: G
GND: G
GN D:G
GN D:G
GN D:G
GN D:G
GND: G
GND:G
GND: G
GND: G
GND: G
GND: G
GN D:G
GN D:G
GN D:G
GND: G
GND: G
GND:G
d = 1 08
S =8
W = 20
i
d= 25
S= 8
W= 8
i
VG_B
V
GB
G ND:G
GND: G
GN D:G
GND :G
Figure 12. Die Layout
GND: G
4.257mm.
2.408mm.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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