RO-P-DS-3037-
1.2W X/Ku-Band Power Amplifier
11.5-16.0 GHz
Preliminary Information
MAAPGM0042-DIE
Features
♦
♦
♦
♦
11.5-16.0 GHz GaAs MMIC Amplifier
11.5-16.0 GHz Operation
1.2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
®
MESFET Process
Primary Applications
♦
Point-to-Point Radio
♦
SatCom
♦
Radio Location
Description
The
MAAPGM0042-DIE
is a 3-stage 1.2 W power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM’s repeatable,
high performance and highly reliable GaAs Multifunction Self-
Aligned Gate (MSAG
®
) MESFET Process. This process features
silicon oxynitride passivation and polyimide scratch protection.
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω,
V
DD
= 8V, V
GG
= -2V, P
in
= 18 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
VSWR
Gate Current
Drain Current
Output Third Order Intercept
Noise Figure
2
nd
Harmonic
3
rd
Harmonic
Symbol
f
P
OUT
PAE
P1dB
G
VSWR
I
GG
I
DD
OTOI
NF
2f
3f
Typical
11.5-16.0
31
30
28
20
1.9:1
<5
< 600
35
10
-27
-35
mA
mA
dBm
dB
dBc
dBc
Units
GHz
dBm
%
dBm
dB
1. T
B
= MMIC Base Temperature
RO-P-DS-3037 - -
2/6
1.2W X/Ku-Band Power Amplifier
Maximum Operating Conditions
1
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
23.0
+12.0
-3.0
660
4.4
180
-55 to +150
MAAPGM0042-DIE
Units
dBm
V
V
mA
W
°C
°C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Voltage
Gate Voltage
Input Power
Junction Temperature
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
T
J
T
B
Min
4.0
-2.5
Typ
8.0
-2.0
18.0
Max
10.0
-1.5
20.0
150
Note 2
Unit
V
V
dBm
°C
°C
2. Maximum MMIC Base Temperature = 150°C — 18.2 °C/W * V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8.0 V.
3. Adjust
V
GG
to set I
DQ
, (approximately @ –2 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn gate
voltage off last.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3037 - -
3/6
1.2W X/Ku-Band Power Amplifier
50
MAAPGM0042-DIE
50
POUT
PAE
40
40
30
30
20
20
10
10
0
10.5
11.5
12.5
13.5
14.5
15.5
0
16.5
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 8V
and Pin = 18 dBm.
50
POUT
PAE
40
50
40
30
30
20
20
10
10
0
4
5
6
7
8
9
10
0
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at f
o
= 13.5 GHz.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3037 - -
4/6
1.2W X/Ku-Band Power Amplifier
50
MAAPGM0042-DIE
VDD = 4
VDD = 8
40
VDD = 6
VDD = 10
30
20
10
0
10.5
11.5
12.5
13.5
14.5
15.5
16.5
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
GAIN
25
VSWR
5
6
20
4
15
3
10
2
5
10.5
11.5
12.5
13.5
14.5
15.5
1
16.5
Frequency (GHz)
Figure 4. Small Signal Gain and VSWR vs. Frequency at V
DD
= 8V.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3037 - -
5/6
1.2W X/Ku-Band Power Amplifier
MAAPGM0042-DIE
Mechanical Information
Chip Size: 2.980 x 1.980 x 0.075 mm
0.123mm.
1.475mm.
(
117
x 78 x 3 mils)
2.980mm
1.980mm
1.736mm.
V
DD
0.0940mm
0.940mm.
OUT
IN
0.239mm.
0
V
GG
2.846mm.
0
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 5. Die Layout
1.480mm.
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
Size (
µ
m)
100 x 200
200 x 150
150 x 150
Size (mils)
4x8
8x6
6x6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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