2.0-4.0 GHz 1W Power Amplifier
Features
♦
♦
♦
♦
1 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG
™ MESFET
Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
Description
The MAAPGM0027-Die is a 2-stage power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input
and output. It can be used as a power amplifier stage or as a driver
stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufactur-
ing processes, planar processing of ion implanted transistors, multiple
implant capability enabling power, low-noise, switch and digital FETs
on a single chip, and polyimide scratch protection for ease of use with
automated manufacturing processes. The use of refractory metals and
the absence of platinum in the gate metal formulation prevents hydro-
gen poisoning when employed in hermetic packaging.
Primary Applications
♦
Wireless Local Loop 3.4-3.6 GHz
♦
MMDS 2.5-2.7 GHz
♦
Radar
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω,
V
DD
= 8V, I
DQ
≈
230mA
2
, P
in
= 10 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Gate Supply Current
Drain Supply Current
Output Third Order Intercept
3
rd
Order Intermodulation Distortion
Single Carrier Level = 21 dBm
5
th
Order Intermodulation Distortion
Single Carrier Level = 21 dBm
Noise Figure
2
nd
Harmonic
3
rd
Harmonic
1
1.
2.
Symbol
f
POUT
PAE
P1dB
G
VSWR
VSWR
I
GG
I
DD
OTOI
IM3
IM5
NF
2f
3f
Typical
2.0-4.0
30
35
29
22
1.8:1
1.4:1
<2
< 350
37
-15
-39
6
-15
-25
mA
mA
dBm
dBm
dBm
dB
dBc
dBc
Units
GHz
dBm
%
dBm
dB
T
B
= MMIC Base Temperature
Adjust V
GG
between –2.4 and –1.5V to achieve indicated I
DQ
.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-4.0 GHz 1W Power Amplifier
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
Maximum Operating Conditions
3
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF, 40% Idss)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Die Attach Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
15.0
+12.0
-3.0
360
3.3
180
-55 to +150
310
Units
dBm
V
V
mA
W
°C
°C
°C
3. Operation outside of these ranges may reduce product reliability. Operation at other than typical values may result in
performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Gate Supply Voltage
Input Power
Junction Temperature
Thermal Resistance
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
T
J
Min
4.0
-2.4
Typ
8.0
-2.0
10
Max
10.0
-1.5
13.0
150
23.9
Note 4
Unit
V
V
dBm
°C
°C/W
°C
Θ
JC
T
B
4. Maximum MMIC Base Temperature = 150°C —Θ
JC
* V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8 V. (See
Note 2 above)
3. Adjust
V
GG
to set I
DQ
.
4. Set RF input.
5.
Power down sequence in reverse. Turn V
GG
off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-4.0 GHz 1W Power Amplifier
50
MAAPGM0027-DIE
50
POUT
PAE
RO-P-DS-3014 B
Preliminary Information
40
40
30
30
20
20
10
10
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 8V
and P
in
= 10 dBm.
50
POUT
PAE
40
40
50
30
30
20
20
10
10
0
4
5
6
7
8
9
10
0
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at f
o
= 3 GHz.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-4.0 GHz 1W Power Amplifier
50
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
VDD = 4
VDD = 8
VDD = 6
VDD = 10
40
30
20
10
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
GAIN
Input VSWR
Output VSWR
6
25
5
20
4
15
3
10
2
5
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1
Frequency (GHz)
Figure 4. Small Signal and VSWR vs Frequency at VDD = 8V.
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2.0-4.0 GHz 1W Power Amplifier
MAAPGM0027-DIE
RO-P-DS-3014 B
Preliminary Information
Mechanical Information
Chip Size: 2.980 x 1.580 x 0.075 mm
(
117 x 62 x 3 mils)
0.127 mm.
1.580 mm.
1.378 mm.
0.840 mm.
IN
1.490 mm.
V
DD
OUT
2.980 mm.
0.840 mm.
0.202 mm.
0
0
Figure 5. Die
Chip edge to bond pad dimensions are shown to the center of the bond pad.
V
GG
2.853 mm.
1.490 mm.
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
Size (μm)
100 x 200
200 x 150
150 x 150
Size (mils)
4x8
8x6
6x6
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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