5W Ku-Band Power Amplifier
12.0-15.0 GHz
Features
♦
♦
♦
♦
MAAPGM0016-DIE
Rev A
Preliminary Datasheet
12.0-15.0 GHz Operation
5 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
®
MESFET Process
Description
The
MAAPGM0016-DIE
is a 3-stage 5 W power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input and
output. It can be used as a power amplifier stage or as a driver stage in
high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly reli-
able GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device
is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple implant
capability enabling power, low-noise, switch and digital FETs on a single
chip, and polyimide scratch protection for ease of use with automated
manufacturing processes. The use of refractory metals and the absence of
platinum in the gate metal formulation prevents hydrogen poisoning when
employed in hermetic packaging.
Primary Applications
♦
♦
♦
Point-to-Point Radio
SatCom
DBS
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω,
V
DD
= 8V, I
DQ
= 2.4 A
2
, P
in
= 21 dBm, R
G
=25
Ω
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Gate Current
Drain Current
2
nd
Harmonic
3
rd
Harmonic
1.
2.
Symbol
f
P
OUT
PAE
P1dB
Gn
VSWR
I
GG
I
DD
2f
3f
Typical
12.0-15.0
37
24
36
20
3:1
<2
<3.5
-40
-75
mA
A
dBc
dBc
Units
GHz
dBm
%
dBm
dB
T
B
= MMIC Base Temperature
Adjust V
GG
between –2.5 and –1.2V to achieve specified Idq.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
5W Ku-Band Power Amplifier
12.0-15.0 GHz
Maximum Ratings
3
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
28.0
+12.0
-3.0
2.5
20.3
170
-55 to +150
MAAPGM0016-DIE
Rev A
Preliminary Datasheet
Units
dBm
V
V
A
W
°C
°C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions
4
Characteristic
Drain Voltage
Gate Voltage
Input Power
Thermal Resistance
MMIC Base Temperature
4.
5.
Symbol
V
DD
V
GG
P
IN
Θ
JC
T
B
Min
4.0
-2.5
Typ
8.0
-2.0
6.0
3.9
Note 5
Max
10.0
-1.2
25.0
Unit
V
V
dBm
°C/W
°C
Operation outside of these ranges may reduce product reliability.
MMIC Base Temperature = 170°C —
Θ
JC
* V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2.7 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8.0 V.
3. Adjust V
GG
to set I
DQ
, (approximately @ –2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn V
GG
off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
5W Ku-Band Power Amplifier
12.0-15.0 GHz
50
50
MAAPGM0016-DIE
Rev A
Preliminary Datasheet
50
50
POUT
40
PAE
40
40
40
POUT (dBm)
POUT (dBm)
30
30
PAE (%)
30
30
20
20
20
POUT
PAE
20
10
10
10
10
0
11.5
12.0
12.5
13.0
13.5
Frequency (GHz)
14.0
14.5
15.0
0
15.5
0
4
5
6
7
Drain Voltage (volts)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage
at fo = 13 GHz.
30
8
9
10
0
Figure 1. Output Power and Power Added Efficiency vs. Frequency
at VDD = 8V.
50
VDD = 4
VDD = 8
40
VDD = 6
VDD = 10
25
6
GAIN
VSWR
5
P1dB (dBm)
20
Gain (dB)
30
20
4
15
3
10
10
2
0
11.5
12.0
12.5
13.0
13.5
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
14.0
14.5
15.0
15.5
5
11.5
12.0
12.5
13.0
13.5
Frequency (GHz)
14.0
14.5
15.0
1
15.5
Figure 4. Small Signal Gain and VSWR vs. Frequency
at VDD = 8V.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
5W Ku-Band Power Amplifier
12.0-15.0 GHz
Mechanical Information
Chip Size: 4.206 x 4.404 x 0.075 mm
0.152mm.
0.656mm.
1.556mm.
MAAPGM0016-DIE
Rev A
Preliminary Datasheet
(
166 x 173 x 3 mils)
3.879mm.
4.206mm.
4 .4 04 m m .
4 .1 86 m m .
V
G G
4 .1 86 m m .
V
D1
V
D2
OUT
2 .2 02 m m .
2 .2 02 m m .
IN
V
G G
V
D1
V
D2
0 .2 19 m m .
0
0
0 .2 19 m m .
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage V
D1
DC Drain Supply Voltage V
D2
DC Gate Supply Voltage V
GG
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
0.656mm.
Figure 5. Die Layout
1.556mm.
3.879mm.
Size (μm)
100 x 200
200 x 150
500 x 150
150 x 150
Size (mils)
4x8
8x6
20 x 6
6x6
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
4.053mm.
5W Ku-Band Power Amplifier
12.0-15.0 GHz
Assembly and Bonding Diagram
MAAPGM0016-DIE
Rev A
Preliminary Datasheet
0. 1
μF
0.1
μF
0.1
μF
V
DD
1 0 0 pF
10 0 p F
10 0 p F
V
GG
V
D1
V
D2
RF
IN
OUT
R F
O UT
IN
1 0 0 pF
V
GG
10 0 p F
V
D1
1 00 pF
V
D2
V
GG
25
Ω
0. 1
μF
0.1
μ
F
0. 1
μF
V
DD
Figure 6. Die Layout
Assembly Instructions:
Die attach:
Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding:
Bond @ 160 °C using standard ball or thermal compression wedge bond techniques.
For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge
bonds of shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to V
GG
before applying positive bias to V
DD
to prevent
damage to amplifier.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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