Amplifier, Power,
1
W
2-18 GHz
Features
♦
1 Watt Saturated Output Power Level
♦
Variable Drain Voltage (6-10V) Operation
®
♦
MSAG Process
MAAP-000080-DIE000
Rev -
Preliminary Datasheet
Description
The
MAAP-000080-DIE000
is a 2-stage 1 W distributed power amplifier
with on-chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier stage or as
a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
♦
Electronic Warfare
♦
Ultra Wideband (UWB)
♦
Test Instrumentation
Also Available in:
Description
Part Number
Plastic
MAAP-000080-PKG003
Sample Board (Die)
MAAP-000080-SMB004
SAMPLES
Mechanical Sample (Die)
MAAP-000080-MCH000
Electrical Characteristics: T
B
= 10°C
1
, Z
0
= 50Ω, V
DD
= 10V, I
DQ
= 750mA
2
, P
in
= 22 dBm, R
G
= 130Ω
Parameter
Bandwidth
Output Power
1-dB Compression Point
Small Signal Gain
Power Added Efficiency
Input VSWR
Output VSWR
Gate Current
Drain Current
1.
2.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Symbol
f
P
OUT
P1dB
G
PAE
VSWR
VSWR
I
GG
I
DD
Typical
2.0-18.0
30
29.5
11.5
11
1.5:1
1.8:1
5
800
Units
GHz
dBm
dBm
dB
%
mA
mA
T
B
= MMIC Base Temperature
Adjust V
GG
between –2.6 and –1.2V to achieve specified Idq.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power,
1
W
2-18 GHz
Maximum Ratings
3
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
27.0
+12.0
-3.0
0.78
7.8
170
-55 to +150
MAAP-000080-DIE000
Rev -
Preliminary Datasheet
Units
dBm
V
V
A
W
°C
°C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions
4
Characteristic
Drain Voltage
Gate Voltage
Input Power
Thermal Resistance
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
Θ
JC
T
B
Min
6.0
-2.6
Typ
10.0
-2.0
22.0
13.1
Note 5
Max
10.0
-1.2
25.0
Unit
V
V
dBm
°C/W
°C
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C —
Θ
JC
* V
DD
* I
DQ
Power Derating Curve, Quiescent (No RF)
9
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
180
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2.7 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 10.0 V.
3. Adjust V
GG
to set I
DQ
, (approximately @ –2.0 V).
4. Set RF input.
Peak Power Dissipation (W)
MMIC Base Temperature (ºC)
5.
Power down sequence in reverse. Turn V
GG
off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power,
1
W
2-18 GHz
MAAP-000080-DIE000
Rev -
Preliminary Datasheet
All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted.
35
33
31
29
35
33
31
29
P
out
(dBm)
25
23
21
19
17
15
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
6V
8V
10V
P
1dB
(dBm)
27
27
25
23
21
19
17
15
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
6V
8V
10V
Frequency (GHz)
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency
at P
in
= 22dBm, and I
DSQ
=740mA
35
33
31
29
Figure 2. 1dB Compression Point and Drain Voltage at I
DSQ
=750mA
35
33
31
29
Psat (dBm)
Psat (dBm)
27
25
23
21
19
17
15
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
6V
8V
10V
27
25
23
21
19
17
15
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
-20ºC
50ºC
120ºC
Frequency (GHz)
Frequency (GHz)
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage
Figure 4. Saturated Output Power vs. Frequency and Temperature
at V
D
=10V and I
DSQ
=750mA.
6
35
33
1.8
31
2.0
20
18
16
14
12
10
8
6
4
2
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
6V
8V
10V
Input VSWR
Output VSWR
Output Power (dBm), SSG(dB), PAE
(%)
5
29
27
25
23
21
1.6
Gain (dB)
4
1.2
1.0
0.8
0.6
0.4
0.2
19
17
15
13
11
9
7
3
2
1
5
0
10
20
30
40
50
60
70
80
90
100
110
0.0
120
Frequency (GHz)
Junction Temperature (ºC)
Figure 5. Small Signal Gain and Input and Output VSWR at
I
DSQ
=750mA.
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and
Drain Current vs. Junction Temperature at 10V, 10GHz, and 750mA.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Drain Current (A)
Pout
SSG
PAE
IDS
1.4
VSWR
Amplifier, Power,
1
W
2-18 GHz
MAAP-000080-DIE000
Rev -
Preliminary Datasheet
All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted.
40
38
18
36
34
32
16
14
30
20
Output Power (dBm)
26
24
22
20
18
16
14
12
10
0
2
4
6
8
10
12
14
16
18
20
22
24
2 GHz
8 GHz
12 GHz
18 GHz
Gain (dB)
28
12
10
8
6
4
2
0
10
12
14
16
18
20
22
24
26
28
30
32
2 GHz
12 GHz
18 GHz
Input Power (dBm)
Figure 7. Output Power vs. Input Power and Frequency at 10V and 750mA
2.0
20
1.8
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
2 GHz
8 GHz
12 GHz
18 GHz
1.6
1.4
Output Power (dBm)
Figure 8. Gain vs. Output Power and Frequency at 10V and 750mA.
Drain Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10
12
14
16
18
20
22
24
PAE (%)
2 GHz
8 GHz
12 GHz
18 GHz
Input Power (dBm)
Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and
I
DSQ
=750mA.
40
38
36
34
32
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
10
12
14
16
18
2 GHz
12 GHz
18 GHz
20
Input Power (dBm)
Figure 10. Drain Current vs. Input Power and Frequency at 10V and 750mA.
Output Power (dBm)
30
26
24
22
20
18
16
14
12
10
2 GHz
8 GHz
12 GHz
18 GHz
Gain (dB)
28
20
22
24
26
28
30
32
Input Power (dBm)
Figure 11. Output Power vs. Input Power and Frequency at 8V and 750mA.
Output Power (dBm)
Figure 12. Gain vs. Output Power and Frequency at 8V and 750mA.
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power,
1
W
2-18 GHz
2.0
20
1.8
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
2 GHz
8 GHz
12 GHz
18 GHz
1.6
1.4
MAAP-000080-DIE000
Rev -
Preliminary Datasheet
All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted.
Drain Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10
12
14
16
18
20
22
24
2 GHz
8 GHz
12 GHz
18 GHz
PAE (%)
Input Power (dBm)
Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and
I
DSQ
=750mA.
Input Power (dBm)
Figure 14. Drain Current vs. Input Power and Frequency at 8V and 750mA
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
