128 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Microchip(微芯科技) |
| 零件包装代码 | DIP |
| 包装说明 | CERDIP-8 |
| 针数 | 8 |
| Reach Compliance Code | unknown |
| 其他特性 | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS |
| 最大时钟频率 (fCLK) | 0.1 MHz |
| 数据保留时间-最小值 | 40 |
| 耐久性 | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010DDDR |
| JESD-30 代码 | R-GDIP-T8 |
| JESD-609代码 | e0 |
| 内存密度 | 1024 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 128 words |
| 字数代码 | 128 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -40 °C |
| 组织 | 128X8 |
| 输出特性 | OPEN-DRAIN |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP8,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | SERIAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 串行总线类型 | I2C |
| 最大待机电流 | 0.0001 A |
| 最大压摆率 | 0.00425 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | AUTOMOTIVE |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 最长写入周期时间 (tWC) | 1 ms |
| Base Number Matches | 1 |
| 85C72-E/J | 85C92-E/J | 85C82-E/J | 85C82-I/J | 85C72-I/J | 85C92-I/J | |
|---|---|---|---|---|---|---|
| 描述 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8 | 512 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8 | 256 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8 | 256 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8 | 128 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8 | 512 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | CERDIP-8 | CERDIP-8 | DIP, DIP8,.3 | DIP, DIP8,.3 | CERDIP-8 | DIP, DIP8,.3 |
| 针数 | 8 | 8 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 其他特性 | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS |
| 最大时钟频率 (fCLK) | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz |
| 数据保留时间-最小值 | 40 | 200 | 40 | 40 | 40 | 200 |
| 耐久性 | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010DDDR | 1010DDMR | 1010DDDR | 1010DDDR | 1010DDDR | 1010DDMR |
| JESD-30 代码 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 1024 bit | 4096 bit | 2048 bit | 2048 bit | 1024 bit | 4096 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 | 8 |
| 字数 | 128 words | 512 words | 256 words | 256 words | 128 words | 512 words |
| 字数代码 | 128 | 512 | 256 | 256 | 128 | 512 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 128X8 | 512X8 | 256X8 | 256X8 | 128X8 | 512X8 |
| 输出特性 | OPEN-DRAIN | OPEN-DRAIN | OPEN-DRAIN | OPEN-DRAIN | OPEN-DRAIN | OPEN-DRAIN |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP8,.3 | DIP8,.3 | DIP8,.3 | DIP8,.3 | DIP8,.3 | DIP8,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 串行总线类型 | I2C | I2C | I2C | I2C | I2C | I2C |
| 最大待机电流 | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A |
| 最大压摆率 | 0.00425 mA | 0.00425 mA | 0.0045 mA | 0.0045 mA | 0.00425 mA | 0.00425 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | AUTOMOTIVE | AUTOMOTIVE | AUTOMOTIVE | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 最长写入周期时间 (tWC) | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
NXP MCU
stm32/stm8
无线连接
嵌入式系统
以拆会友
工业自动化与控制
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
