Preliminary Datasheet
RO-P-DS-3084 A
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
MAAMGM0007-DIE
Features
♦
♦
♦
♦
♦
0.15 Watt Saturated Output Power Level
Single Bias Operation
Variable Drain Voltage (4-6V) Operation
GaAs MSAG™ Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAMGM0007-Die is a single stage distributed amplifier
with single bias operation. This product is fully matched to 50
ohms on both the input and output. It can be used as a driver
stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise, switch
and digital FETs on a single chip, and polyimide scratch protec-
tion for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when em-
ployed in hermetic packaging.
Primary Applications
♦
Test Equipment
♦
Electronic Warfare
♦
Radar
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50Ω, V
DD
= 5V, P
in
= 16 dBm
Parameter
Bandwidth
Output Power
1-dB Compression Point
Small Signal Gain
Noise Figure
Input VSWR
Output VSWR
Drain Supply Current
Symbol
f
P
OUT
P
1dB
G
NF
VSWR
VSWR
I
DD
Typical
2.0-18.0
22
19
8
6
2.0:1
2.0:1
< 250
mA
Units
GHz
dBm
dBm
dB
dB
1.
T
B
= MMIC Base Temperature
RO-P-DS-3084 A
2/6
2.0-18.0 GHz Distributed Amp/Gain Block
Maximum Operating Conditions
2
Parameter
Input Power
Drain Supply Voltage
Junction Temperature
Storage Temperature
Die Attach Temperature
Symbol
P
IN
V
DD
T
J
T
STG
MAAMGM0007-DIE
Absolute Maximum
20.0
+8.0
180
-55 to +150
310
Units
dBm
V
°C
°C
°C
2. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Input Power
Junction Temperature
Thermal Resistance
MMIC Base Temperature
Symbol
V
DD
P
IN
T
J
Θ
JC
T
B
58
Note 3
Min
4.0
Typ
5.0
16.0
Max
6.0
18.0
150
Unit
V
dBm
°C
°C/W
°C
3. Maximum MMIC Base Temperature = 150°C —Θ
JC
* V
DD
* I
DD
Operating Instructions
This device is static sensitive.
Please handle with care.
Specifications subject to change without notice.
2
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
RO-P-DS-3084 A
3/6
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
50
45
40
4V
5V
6V
20
SSG
Input VSWR
Output VSWR
16
6
5
Output Power (dBm)
35
30
25
20
15
10
5
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
1
4
2
12
4
Gain (dB)
8
3
Frequency (GHz)
Figure 1. Output Power vs. Frequency and Drain Voltage at P
in
=16dBm.
Frequency (GHz)
Figure 2. Small Signal Gain and Input and Output VSWR vs. Frequency at V
D
=5V
50
45
40
35
30
25
20
15
10
5
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
4V
5V
6V
50
45
40
35
30
25
20
15
10
5
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
4V
5V
6V
17
18
Frequency (GHz)
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage.
Frequency (GHz)
Figure 4. 1dB Compression Point vs. Frequency and Drain Voltage.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
VSWR
RO-P-DS-3084 A
4/6
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
30
27
24
2GHz
6GHz
10GHz
15GHz
18GHz
1.0
2GHz
6GHz
10GHz
0.8
15GHz
18GHz
Output Power (dBm)
21
18
15
12
9
6
3
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Input Power (dBm)
Figure 5. Output Power vs. Input Power and Frequency at V
D
=5V.
Input Power (dBm)
Figure 6. RF Drain Current vs. Input Power and Frequency at V
D
=5V.
14
4V Gain
4V NF
5V Gain
5V NF
6V Gain
6V NF
14
12
12
10
10
8
8
6
6
4
4
2
2
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0
Frequency (GHz)
Figure 7. Small Signal Gain and Noise Figure vs. Frequency and Drain Voltage.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
RO-P-DS-3084 A
5/6
2.0-18.0 GHz Distributed Amp/Gain Block
MAAMGM0007-DIE
Mechanical Information
Chip Size: 1.67 x 3.00 x 0.075 mm
(
65
x 118 x 3 mils)
3.000mm
0.817mm
0.162mm
1.503mm
GND:G
VD_5
VD_6 VD_7 VD_8
1.217mm
1.417mm
1.617mm
GND:G
GND:G
1.665mm
1.558mm
GND:G
GND:G
OUT
GND:G
GND:G
GN D:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
0.367mm
IN
GND:G
GND:G
GND :G
0
0
2.838mm
Figure 8. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
5 Volt Supply: VD_5
6 Volt Supply: VD_6
7 Volt Supply: VD_7
8 Volt Supply: VD_8
Size (µm)
150 x 150
150 x 150
100 x 100
100 x 100
100 x 100
Size (mils)
6x6
6x6
4x4
4x4
4x4
Specifications subject to change without notice.
5
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
G DN G
:
G DN G
:
G DN G
:
GN D:G
0.907mm
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