Ordering number : EN8564
2SD2600
SANYO Semiconductors
DATA SHEET
2SD2600
Applications
•
NPN Triple Diffused Planar Silicon Darlington Transistor
Driver Applications
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
•
•
High DC current gain.
Large current capacity and wide ASO.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
110
100
6
8
12
35
150
--55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
ton
tstg
tf
VCB=80V, IE=0A
VEB=5V, IC=0A
VCE=3V, IC=4A
VCE=5V, IC=4A
IC=4A, IB=8mA
IC=4A, IB=8mA
IC=5mA, IE=0A
IC=50mA, RBE=∞
See specified test circuit.
See specified test circuit.
See specified test circuit.
1500
4000
20
0.9
110
100
0.6
4.8
1.6
1.5
2.0
MHz
V
V
V
V
µs
µs
µs
Conditions
Ratings
min
typ
max
0.1
3.0
Unit
mA
mA
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73106IA MS IM TA-1084 No.8564-1/3
2SD2600
Package Dimensions
unit : mm (typ)
7002-003
OUTPUT
8.2
7.8
6.2
3
8.4
10.0
Switching Time Test Circuit
0.4
0.2
0.6
PW=50µs
DC≤1%
INPUT
IB2
TUT
IB1
RB
RL
12.5Ω
4.2
1.2
0.7
50Ω
1.0
2.54
1
2
VR
+
100µF
+
470µF
VCC=50V
1.0
2.54
6.2
5.2
0.3
0.6
7.8
5.08
10.0
6.0
2.5
1 : Base
2 : Emitter
3 : Collector
SANYO : ZP
VBE= --5V
500IB1= --500IB2=IC=4A
Electrical Connection
C
B
6kΩ
200Ω
E
10
IC -- VCE
From top
20mA
18mA
16mA
14mA
12mA
10mA
8mA
6mA
A
4m
2mA
Collecotr Current, IC -- A
8
IC -- VCE
From top
2000µA
1800µA
1600µA
1400µA
1200µA
Collecotr Current, IC -- A
8
6
1000
µ
A
800µA
6
4
600
µA
4
400
µA
2
2
200µA
0
0
1
2
3
IB=0mA
4
5
IT03402
0
0
1
2
3
IB=0µA
4
5
IT03403
Collector-to-Emitter Voltage, VCE -- V
8
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
2
hFE -- IC
VCE=3V
10000
7
5
C
120
°
Ta=
VCE=3V
Collector Current, IC -- A
DC Current Gain, hFE
6
25
°
C
3
2
1000
7
5
3
2
100
0
°
C
2
Ta=1
2
25
°
C
4
--40
°C
C
--40
°
0
0.4
0.8
1.2
1.6
2.0
2.4
IT03404
7
5
0.1
2
3
5
7
1.0
2
3
5
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
10
IT03405
7
No.8564-2/3
2SD2600
10
7
VCE(sat) -- IC
IC / IB=500
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
10
7
5
VBE(sat) -- IC
IC / IB=500
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
3
2
Ta= --40°C
1.0
7
5
3
0.1
25
°C
120
°C
Ta= --40°C
25
°C
1.0
7
5
0.1
120
°
C
2
3
5
7
1.0
2
3
5
Collector Current, IC -- A
2
10
5
10
IT03406
7
2
3
5
7
1.0
2
3
5
ASO
Collector Current, IC -- A
50
10
IT03407
7
PC -- Tc
ICP=12A
100
Tc=25°C
Collector Dissipation, PC -- W
7
2
IT03408
IC=8A
ms
ms
10
1m
s
Collector Current, IC -- A
40
3
2
1.0
5
3
2
0.1
5
3
2
2
30
DC
op
er
ati
on
20
10
1ms to 100ms : Single pulse
3
5
7
10
2
3
5
100
0
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
Case Temperature, Tc --
°C
IT03409
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2006. Specifications and information herein are subject
to change without notice.
PS No.8564-3/3
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