RES100N03
Transistors
Switching (30V, 10A)
RES100N03
Features
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
External dimensions
(Units : mm)
Max.1.75
+
5.0
−
0.2
(5)
(4)
(8)
Equivalent circuit
(8) (7) (6) (5)
(8) (7) (6) (5)
ROHM : SOP8
(4)
(1) (2) (3) (4)
∗
(1) (2) (3)
∗
Gate Protection Diode.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
∗
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
Absolute maximum ratings
(Ta = 25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Pulsed
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗
I
DR
I
DRP
∗
I
s
I
sp
∗
P
D
Tch
Tstg
Limits
30
±20
10
40
10
40
1.3
5.2
2
150
−55~+150
Unit
V
V
A
A
A
A
A
A
W
Total Power Dissipation (TC=25
°C
)
Channel Temperature
Storage Temperature
∗PW≤10µs,
Duty cycle≤1%
°C
°C
+
0.2
−
0.1
Structure
Silicon N-channel
MOS FET
+
3.9
−
0.15
+
6.0
−
0.3
+
0.5
−
0.1
(1)
0.15
+
1.5
−
0.1
Each lead has same dimensions
1.27
+
0.4
−
0.1
0.1
RES100N03
Transistors
Thermal resistance
(Ta = 25°C)
Parameter
Channel to Ambient
Symbol
Rth (ch-A)
Limits
62.5
Unit
°C
/ W
Electrical characteristics
(Ta = 25°C)
Parameter
Gate-Source Leakage
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
∗Pulsed
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS
(th)
R
DS
(on)
∗
l Y
fs
l
∗
C
iss
C
oss
C
rss
t
d(on)
t
r
∗
∗
Min.
−
30
−
1.0
−
−
−
10
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
10
15
16
−
1600
900
280
17
50
75
55
28.5
4.9
5.8
Max.
±10
−
1
2.5
13
20
21
−
−
−
−
−
−
−
−
57.0
−
−
Unit
µA
V
µA
V
Test Conditions
V
GS
=±
20V, V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=30V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=10A,
V
GS
=10V
I
D
=10A,
V
GS
=4.5V
I
D
=10A,
V
GS
=4V
I
D
=10A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=5A,
V
DD
5V
V
GS
=10V
R
L
=3Ω
R
GS
=10Ω
V
DD
=15V
V
GS
=10V
I
D
=10A
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
t
d(off)
∗
t
f
∗
Q
g
∗
Q
gs
∗
Q
gd
∗
Body diode characteristics (Source-Drain Characteristics)
(Ta = 25°C)
Parameter
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
∗Pulsed
Symbol
V
SD
∗
t
rr
∗
Q
rr
∗
Min.
−
−
−
Typ.
−
260
290
Max.
1.5
−
−
Unit
V
ns
nC
Test Conditions
I
s
=5.2A,
V
GS
=0V
I
DR
=5.2A,
V
GS
=0V
di/dt=100A/µs
RES100N03
Transistors
Electrical characteristic curves
FORWARD TRANSFER ADMITTANCE : I Y
fS
I
(S)
10
REVERSE DREIN CURRENT : I
DR
(A)
Ta=125°C
75°C
25°C
1
−25°C
10
Ta=−25°C
25°C
75°C
125°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
DS
=
0V
Pulsed
100
V
DS
=
10V
Pulsed
1
V
GS
=
10V
Pulsed
0.1
Ta=125°C
75°C
25°C
−25°C
0.01
1
0.1
0.1
0.01
0.0
0.5
1.0
1.5
0.01
0.01
0.1
1
10
0.001
0.1
1
DRAIN CURRENT : I
D
(A)
10
SOURCE - DRAIN VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
Fig.1 Reverse Drein Current
vs. Source - Drain Voltage
Fig.2 Forward Transfer Admittance
vs. Drain Current
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
GS
=
4V
Pulsed
0.020
0.1
Ta=125°C
75°C
25°C
−25°C
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
−50 −25
0
25
50
75
100 125 150
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
GS
=10V
0.018 I
D
=10A
Pulsed
0.016
0.050
Ta=25
°C
Pulsed
0.040
0.030
I
D
=10A
5A
0.020
0.01
0.010
0.001
0.1
1
DRAIN CURRENT : I
D
(A)
10
0.000
0
2
4
6
8
10 12 14 16 18 20
CHANNEL TEMPERATURE : Tch (°C)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Channel Temperature
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
4.0
DRAIN-SOURCE VOLTAGE : V
DS
(V)
3.0
CAPACITANCE : C
(pF)
25
V
GS
20
V
DS
15
10
5
0
0
5
Ta=25°C
V
DD
=24V
I
D
=7A
Pulsed
0
40
48
10
C
iss
1000
C
oss
C
rss
100
2.0
1.0
0.0
−50 −25
0
25
50
75
100 125 150
10
0.1
1
10
100
8
16
24
32
CHANNEL TEMPERATURE : Tch (°C)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
TOTAL GATE CHARGE : Qg (
nC)
Fig.7 Gate Threshold Voltage
vs. Channel Temperature
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
Fig.9 Dynamic Input Characteristics
GATE-SOURCE VOLTAGE : V
GS
(V)
V
DS
=
10V
I
D
=
1mA
Pulsed
10000
Ta=25°C
f=1MHz
V
GS
=0V
Pulsed
30
15
RES100N03
Transistors
1000
Ta=25°C
V
DD
=30V
V
GS
=10V
R
G
=10Ω
Pulsed
20
18
DRAIN CURRENT : I
D
(A)
SWITCHING TIME : t
(ns)
16
14
12
10
8
6
4
2
V
GS
=6V
V
GS
=4.5V
V
GS
=4V
V
GS
=3.5V
Ta
=
25°C
Pulsed
V
GS
=3V
t
d (off)
100
t
f
t
r
t
d (on)
10
V
GS
=2.5V
1
0.1
1
DRAIN CURRENT : I
D
(A)
10
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : V
DS
(V)
Fig.10 Switching Characteristics
Fig.11 Typical Output Characteristics
10
NORMALIZED TRANSIENT : r
(t)
THERMAL RESISTANCE
1
D=1
D=0.5
D=0.2
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=Single
Tc=25°C
θ
th(ch-c)
(t)=r(t)
θ
th(ch-c)
θ
th(ch-c)
=6.25°C / W
PW
T
D=PW
T
0.01
0.001
10µ
100µ
1m
10m
100m
1
10
100
PULSE WIDTH : PW
(s)
Fig.12 Normalized Transient Thermal
Resistance vs. Pulse Width
测试/测量
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