RF Power Amplifier IC
For 2.5 GHz ISM
Features
•
•
•
•
•
•
•
•
•
•
•
Perfect for 2.4 GHz Cordless DECT (WDECT)
Single Positive Supply
Power Added Efficiency As High As 55 Percent
IP
3
= +43 dBm
Output Power 26.5 dBm @ 3.3 V
Output Power 28.5 dBm @ 5.0 V
100 Percent Duty Cycle
2200 to 2600 MHz Operation
8 Pin MSOP Full Downset Plastic Package
Operates Over Wide Ranges of Supply Voltage
Self-Aligned MSAG
®
-Lite MESFET Process
MA02303GJ
V7
Functional Schematic
PIN 1
PIN 8
Description
The MA02303GJ is an RF power amplifier based on
M/A-COM’s Self-Aligned MSAG
â
MESFET Process.
This product is designed for use in 2.4 GHz ISM
products. For booster applications, it features a low
power “bypass” mode and output power control via
V
DD1
.
PIN Configuration
1
PIN
1
2
3
4
5
Function
V
D
1
RF
IN
/ V
G
1
GND
V
G
2
V
G
3
GND
RF
OUT
/ V
D
3
V
D
2
Description
Drain voltage, first stage
RF input and drain
voltage for first stage
Ground
Gate bias voltage,
second stage
Gate bias voltage,
third stage
Ground
RF output and drain
voltage for third stage
Drain voltage for
second stage
Ordering Information
Part Number
MA02303GJ-R7
MA02303GJ-R13
MA02303GJ-SMB
Description
7 inch, 1000 piece reel
13 inch, 3000 piece reel
Sample Test Board (Includes 5 Samples)
6
7
8
1. Package bottom is electrical and thermal ground.
Absolute Maximum Ratings
2
Rating
DC Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Moisture Sensitivity
Symbol
V
DD
P
IN
T
J
T
STG
T
OPER
Value
5.5 V
10 mW
150°C
-40°C to +150°C
-40°C to +100°C
JEDEC Level 1
2. Beyond these limits, the device may be damaged or device
reliability reduced. Functional operation at absolute-
maximum-rated conditions is not implied.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RF Power Amplifier IC
For 2.5 GHz ISM
evaluation board shown in Figure 11.
Characteristic
Frequency Range
Output Power, ƒ = 2450 MHz
Power Added Efficiency, ƒ = 2450 MHz
Current, ƒ = 2450 MHz
Current for linear operation, ƒ = 2450 MHz
Gain, ƒ = 2450 MHz, linear operation
Harmonics, ƒ = 2450 MHz
Input VSWR, ƒ = 2450 MHz
Off Isolation (V
DD
=0 V)
Noise Figure, ƒ = 2450 MHz
Thermal Resistance, junction to package bottom
Third Order Intercept Point
(ƒ
1
=2450 MHz, ƒ
2
= 2451 MHz, P
IN
= -20 dBm SCL)
Load Mismatch (V
DD
= 5.5 V, VSWR = 8:1, P
IN
= 0 dBm)
Stability
(P
IN
= -2 to 2 dBm, V
DD
= 0 to -5.5 V, Load VSWR = 5:1, all phases)
R
TH
IP
3
—
—
MA02303GJ
V7
Electrical Specifications:
V
DD
= +3.3 V, P
IN
= -2 dBm, Duty Cycle = 100 %, T
S
= 37 °C
3
, measured on
Symbol
ƒ
P
OUT
h
I
DD
I
DD
G
2ƒ, 3ƒ, 4 ƒ
—
—
dB
dBc
Ratio
dB
dB
°C/W
dBm
Unit
MHz
dBm
%
mA
Min.
2400
25.3
43
—
—
—
—
—
—
—
—
—
Typ.
—
26.5
51
265
265
29.5
-40
—
40
3.6
25
43
Max.
2500
—
—
415
—
—
-30
2.0:1
—
—
—
—
No Degradation in Power Output
All non-harmonically related outputs
more than 60 dB below desired signal
3. T
S
is the temperature measured at the soldering point of the downset paddle on the bottom of the IC.
MSOP-8EP (Downset Lead)
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RF Power Amplifier IC
For 2.5 GHz ISM
Typical Characteristics
(Measured data from process nominal devices)
Output Power, Drain Current and Efficiency
vs. Input Power
60
300
MA02303GJ
V7
Output Power, and Drain Current vs. Input Power for
Low Current “Bypass” Mode (V
DD1,2
= 3.3 V,
V
DD3
= 0.0 V)
12
300
V
DD1, 2
(dBm), PAE (%)
(dBm), PAE (%)
50
40
30
20
10
0
-10
PAE
P
V
DD1, 2, 3
250
I
DD
10
8
6
4
2
0
-10
PAE
P
= 3.3 V, V
DD3
= 0.0 V
F = 2450 MHz
250
(mA)
150
100
= 3.3 V
OUT
I
DD
I
100
50
-5
0
0
5
OUT
P
F = 2450 MHz
-5
P (dBm)
IN
0
0
5
P
50
OUT
P (dBm)
IN
Output Power, Drain Current and Efficiency vs.
Supply Voltage
60
0.35
PAE
Output Power, Drain Current and Efficiency vs. V
DD1
for Power Control
30
25
600
500
P
OUT
DD1
DD2
(dBm), PAE (%)
50
40
30
20
10
0
1
P
IN
0.30
(dBm)
DD
DD
OUT
OUT
= -2 dBm
P
PAE
OUT
P
I
F = 2450 MHz
DD
0.10
5
0.05
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
100
0
2
P (dBm)
IN
3
4
V
DD1
(V)
Output Power, Input Return Loss and Efficiency
vs. Frequency
60
0
-5
Output Power and Drain Current vs. Temperature
at V
DD
= +3.0 V
35
30
350
300
250
I
P
P
V
IN
DD
(dBm), PAE (%)
50
40
30
20
10
0
2200
P = - 2 dBm
IN
(dBm)
IRL (dB)
OUT
20
15
10
5
0
-50
= - 2 dBm
- 3.0 V
200
150
100
50
OUT
-15
-20
IRL
OUT
P
V
DD
= 3.3 V
-25
2400
2500
-30
2600
P
OUT
DD
F = 2450 MHz
2300
0
S
FREQUENCY (MHz)
Temperature, T ( C)
o
50
0
100
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
I
DD
(mA)
PAE
P
-10
25
I
0.15
DD1
P
10
200
,I
0.20
I
DD2
OUT
I
(A)
P
0.25
20
15
400
300
I
(mA)
I
I
DD
OUT
DD
150
(mA)
200
200
RF Power Amplifier IC
For 2.5 GHz ISM
Typical Characteristics (Cont’d)
(Measured data from process nominal devices)
Output Power and Drain Current vs. Temperature
at V
DD
= +3.2 V
35
30
350
300
MA02303GJ
V7
Output Power and Drain Current vs. Temperature
at V
DD
= +3.6V
35
30
350
300
250
I
P
P
V
IN
DD
(dBm)
(dBm)
25
20
15
10
5
0
-50
P
V
IN
250
25
20
15
10
5
0
-50
= - 2 dBm
- 3.6 V
(mA)
I
P
= - 2 dBm
- 3.2 V
DD
200
150
100
50
200
150
100
50
OUT
OUT
DD
P
P
OUT
I
OUT
DD
DD
F = 2450 MHz
F = 2450 MHz
0
S
50
o
0
100
0
S
50
o
0
100
Temperature, T ( C)
Temperature, T ( C)
Harmonics
Maximum Operating Temperature (Ts) to Maintain
<150 °C Junction Temperature.
6
P
V
IN
30
ƒ
0
= 2 45 0M H z
D D
OUT
25
20
15
P
OUT
(dBm)
10
5
0
-5
-1 0
-1 5
-2 0
ƒ0
2ƒ0
3ƒ0
= -2 d B m
= 3 .3 V
5
4
3
2
1
0
-50
0
50
S
P
DISS
(W) = I
DD
*V
DD3
-P
4ƒ0
Temperature T ( C)
o
100
150
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
I
DD
(mA)
RF Power Amplifier IC
For 2.5 GHz ISM
Mechanical Data
MA02303GJ
V7
Figure 11 Component layout and printed circuit drawing for evaluation board (60 mil GETEK board).
Application Information
+V
DD
T7
C3
1
C2
C4
3
8
T8
L2
RF
IN
T1
C1
T2
L1
R1
T3
RF
OUT
T5
C5
T6
C6
2
7
3
6
T4
4
5
Full-Downset Paddle
To Board Ground
Figure 12 Evaluation Board Schematic
List of Components
Discrete Components
C1 – C4 = 100 pF multilayer ceramic chip capacitor (Dielectric Labs C11AH101K5TXL)
C5 = 2.0 pF multilayer ceramic chip capacitor (Dielectric Labs C11AH2R0BTXL)
C6 = 1.2 pF multilayer ceramic chip capacitor (Dielectric Labs C11AH1R2B5TXL)
R1 = 300
Ω
chip resistor (P300ECT-ND)
L1 = 1.8 nH chip inductor (Toko TKS235CT-ND)
L2 = 27 nH chip inductor (Coilcraft 1008CS-270XKBB)
Transmission Line Lengths*
T1 = 0.15"
T2 = 0.21"
T3 = 0.11" (Not very critical)
T4 = 0.16"
T5 = 0.13"
T6 = 0.16"
T7 = 0.13" (Not very critical)
T8 = 0.077" (Not very critical)
T1, T2, T3, T5, T6 are 0.077" wide
T4, T7, and T8 are 0.026" wide
*The board material is 0.060" FR-4 (distance is between RF and GND) with a dielectric constant of about 4.3 (standard FR-4)
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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