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2SD2712

产品描述Power Bipolar Transistor, 10A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
产品类别分立半导体    晶体管   
文件大小33KB,共3页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
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2SD2712概述

Power Bipolar Transistor, 10A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN

2SD2712规格参数

参数名称属性值
Objectid2064583599
零件包装代码TO-3PB
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)10 A
集电极-发射极最大电压160 V
配置SINGLE
最小直流电流增益 (hFE)5000
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型NPN
最大功率耗散 (Abs)110 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)15 MHz

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Ordering number : ENN8402
2SD2712
2SD2712
Applications
NPN Triple Diffused Planar Silicon Darlington Transistor
Driver Applications
Suitable for use in control motor drivers, printer hammer drivers, relay drivers, audio output and
constant-voltage regulators.
Features
High DC current gain.
Wide ASO.
Low saturation voltage.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
180
160
6
10
16
2.5
110
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector Sustain Voltage
Symbol
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
VCEO(SUS)
Conditions
VCB=180V, IE=0A
VEB=6V, IC=0A
VCE=5V, IC=6.5A
VCE=5V, IC=6.5A
IC=5.5A, IB=11mA
IC=5.5A, IB=11mA
IC=1mA, IE=0A
IC=100mA, IB=0A
180
160
5000
15
1.5
2.3
MHz
V
V
V
V
Ratings
min
typ
max
0.1
10
Unit
mA
mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81205CB MS IM TB-00001697 No.8402-1/3
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