HIGH-SPEED 3.3V
16K x 16 DUAL-PORT
STATIC RAM
◆
IDT70V26S/L
Features
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Commercial: 25/35/55ns (max.)
– Industrial: 25ns (max.)
Low-power operation
– IDT70V26S
Active: 300mW (typ.)
Standby: 3.3mW (typ.)
– IDT70V26L
Active: 300mW (typ.)
Standby: 660
µ
W (typ.)
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
◆
◆
◆
◆
◆
◆
◆
◆
◆
◆
◆
IDT70V26 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = V
IH
for
BUSY
output flag on Master
M/S = V
IL
for
BUSY
input on Slave
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 3.3V (±0.3V) power supply
Available in 84-pin PGA and PLCC
Industrial temperature range (-40°C to +85°C) is available
for selected speeds
Functional Block Diagram
R/W
L
UB
L
R/W
R
UB
R
LB
L
CE
L
OE
L
LB
R
CE
R
OE
R
I/O
8L
-I/O
15L
I/O
Control
I/O
0L
-I/O
7L
BUSY
L
A
13L
A
0L
(1,2)
I/O
8R
-I/O
15R
I/O
Control
I/O
0R
-I/O
7R
BUSY
R
Address
Decoder
14
(1,2)
MEMORY
ARRAY
14
Address
Decoder
A
13R
A
0R
CE
L
ARBITRATION
SEMAPHORE
LOGIC
CE
R
SEM
L
M/S
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
outputs are non-tri-stated push-pull.
SEM
R
2945 drw 01
JULY 2003
1
©2003 Integrated Device Technology, Inc.
DSC 2945/14
IDT70V26S/L
High-Speed 16K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Description
The IDT70V26 is a high-speed 16K x 16 Dual-Port Static RAM. The
IDT70V26 is designed to be used as a stand-alone 256K-bit Dual-Port
RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-
more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM
approach in 32-bit or wider memory system applications results in full-
speed, error-free operation without the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by
CE
permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 300mW of power.
The IDT70V26 is packaged in a ceramic 84-pin PGA and
84-Pin PLCC.
Pin Configurations
(1,2,3)
V
DD
R/W
L
I/O
7L
I/O
6L
I/O
5L
I/O
4L
I/O
3L
I/O
2L
I/O
1L
I/O
0L
A
13L
A
12L
A
11L
UB
L
LB
L
V
SS
A
10L
OE
L
07/21/03
SEM
L
CE
L
INDEX
11 10 9 8 7 6
I/O
8L
I/O
9L
I/O
10L
I/O
11L
I/O
12L
I/O
13L
V
SS
I/O
14L
I/O
15L
V
DD
V
SS
I/O
0R
I/O
1R
I/O
2R
V
DD
I/O
3R
I/O
4R
I/O
5R
I/O
6R
I/O
7R
I/O
8R
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
5 4
3 2 1 84 83 82 81 80 79 78 77 76 75
74
73
72
71
70
69
68
67
IDT70V26J
J84-1
(4)
84-Pin PLCC
Top View
(5)
66
65
64
63
62
61
60
59
58
57
56
55
A
9L
A
8L
A
7L
A
6L
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
BUSY
L
V
SS
M/S
BUSY
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
,
54
32
33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53
I/O
11R
I/O
13R
I/O
14R
I/O
15R
V
SS
LB
R
V
SS
A
13R
A
12R
A
11R
R/W
R
SEM
R
I/O
10R
I/O
12R
I/O
9R
A
10R
OE
R
CE
R
A
9R
NOTES:
1. All V
DD
pins must be connected to power supply.
2. All V
SS
pins must be connected to ground supply.
3. Package body is approximately 1.15 in x 1.15 in x .17 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
6.42
2
UB
R
A
8R
2945 drw 02
IDT70V26S/L
High-Speed 16K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Pin Configurations
(1,2,3)
(con't.)
07/21/03
63
61
60
58
55
54
51
48
46
45
42
11
I/O
7L
66
I/O
5L
64
I/O
4L
62
I/O
2L
59
I/O
0L
56
OE
L
49
SEM
L
50
LB
L
47
A
12L
44
A
11L
43
A
8L
40
10
I/O
10L
67
I/O
8L
65
I/O
6L
I/O
3L
I/O
1L
57
UB
L
53
CE
L
52
A
13L
A
10L
A
9L
41
A
6L
39
09
I/O
11L
69
I/O
9L
68
V
SS
V
DD
R/W
L
A
7L
38
37
A
5L
08
I/O
13L
72
I/O
12L
71
73
33
A
4L
35
A
3L
34
07
I/O
15L
75
I/O
14L
70
V
DD
74
BUSY
L
IDT70V26G
G84-3
(4)
84-Pin PGA
Top View
(5)
32
A
1L
31
A
0L
36
06
I/O
0R
76
V
SS
77
V
SS
78
V
SS
28
M/S
29
A
2L
30
05
I/O
1R
79
I/O
2R
80
V
DD
A
1R
A
0R
26
BUSY
R
27
04
I/O
3R
81
I/O
4R
83
7
11
12
A
3R
23
A
2R
25
03
I/O
5R
82
1
I/O
7R
2
5
8
V
SS
V
SS
10
SEM
R
14
17
20
A
6R
22
A
4R
24
02
I/O
6R
84
3
I/O
9R
I/O
10R
4
I/O
13R
6
I/O
15R
9
R/W
R
15
UB
R
13
A
12R
16
A
9R
18
A
7R
19
A
5R
21
01
I/O
8R
A
I/O
11R
B
I/O
12R
C
I/O
14R
D
OE
R
E
LB
R
F
CE
R
G
A
13R
H
A
11R
J
A
10R
K
A
8R
,
L
2945 drw 03
Index
NOTES:
1. All V
DD
pins must be connected to power supply.
2. All V
SS
pins must be connected to ground supply.
3. Package body is approximately 1.12 in x 1.12 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
Pin Names
Left Port
CE
L
R/W
L
OE
L
A
0L
- A
13L
I/O
0L
- I/O
15L
SEM
L
UB
L
LB
L
BUSY
L
CE
R
R/W
R
OE
R
A
0R
- A
13R
I/O
0R
- I/O
15R
SEM
R
UB
R
LB
R
BUSY
R
M/S
V
DD
V
SS
Right Port
Chip Enable
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Upper Byte Select
Lower Byte Select
Busy Flag
Master or Slave Select
Power (3.3V)
Ground (0V)
2945 tbl 01
Names
6.42
3
IDT70V26S/L
High-Speed 16K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I — Non-Contention Read/Write Control
Inputs
(1)
CE
H
X
L
L
L
L
L
L
X
R/W
X
X
L
L
L
H
H
H
X
OE
X
X
X
X
X
L
L
L
H
UB
X
H
L
H
L
L
H
L
X
LB
X
H
H
L
L
H
L
L
X
SEM
H
H
H
H
H
H
H
H
X
I/O
8-15
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
DATA
OUT
High-Z
Outputs
I/O
0-7
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
DATA
OUT
DATA
OUT
High-Z
Mode
Deselected: Power-Down
Both Bytes Deselected: Power-Down
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
Read Lower Byte Only
Read Both Bytes
Outputs Disabled
2945 tbl 02
NOTE:
1. A
0L
— A
13L
≠
A
0R
— A
13R
Truth Table II — Semaphore Read/Write Control
(1)
Inputs
(1)
CE
H
X
H
X
L
L
R/W
H
H
↑
↑
X
X
OE
L
L
X
X
X
X
UB
X
H
X
H
L
X
LB
X
H
X
H
X
L
SEM
L
L
L
L
L
L
I/O
8-15
DATA
OUT
DATA
OUT
DATA
IN
DATA
IN
____
Outputs
I/O
0-7
DATA
OUT
DATA
OUT
DATA
IN
DATA
IN
____
Mode
Read Data in Semaphore Flag
Read Data in Semaphore Flag
Write I/O
0
into Semaphore Flag
Write I/O
0
into Semaphore Flag
Not Allowed
Not Allowed
2945 tbl 03
____
____
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all I/O's (I/O
0
-I/O
15
). These eight semaphores are addressed by A
0
-A
2
.
6.42
4
IDT70V26S/L
High-Speed 16K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
T
BIAS
T
STG
T
JN
I
OUT
Rating
Terminal Voltage
with Respect to GND
Temperature Under Bias
Storage Temperature
Junction Temperature
DC Output Current
Commercial
& Industrial
-0.5 to +4.6
-55 to +125
-65 to +150
+150
50
Unit
V
o
o
Maximum Operating Temperature
and Supply Voltage
(1)
Grade
Commercial
Industrial
Ambient Temperature
0
O
C to +70
O
C
-40
O
C to +85
O
C
GND
0V
0V
V
DD
3.3V
+
0.3
3.3V
+
0.3
2945 tbl 05
C
C
C
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
o
mA
2945 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
DD
+ 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> V
DD
+ 0.3V.
3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselected.
Recommended DC Operating
Conditions
(2)
Symbol
V
DD
V
SS
V
IH
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0
-0.3
(1)
Typ.
3.3
0
____
Max.
3.6
0
V
DD
+ 0.3
(2)
0.8
Unit
V
V
V
V
2945 tbl 06
Capacitance
Symbol
C
IN
C
OUT
(1)
V
IL
____
(T
A
= +25°C, f = 1.0MHz)
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
2945 tbl 07
Parameter
Input Capacitance
Output Capacitance
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed V
DD
+ 0.3V.
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
DD
= 3.3V ± 0.3V)
70V26S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
DD
= 3.6V, V
IN
= 0V t
o
V
DD
CE
= V
IH
, V
OUT
= 0V t
o
V
DD
I
OL
= +4mA
I
OH
= -4mA
Min.
___
70V26L
Min.
___
Max.
10
10
0.4
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
2945 tbl 08
___
___
___
___
2.4
2.4
NOTE:
1. At V
DD
< 2.0V, input leakages are undefined.
6.42
5
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