Bulletin I27194 03/05
40MT120UHA
40MT120UHTA
"HALF-BRIDGE" IGBT MTP
Features
•
UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
•
•
•
•
•
•
•
Technology
Positive V
CE(ON)
Temperature Coefficient
10µs Short Circuit Capability
HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery and Low V
F
Square RBSOA
Al
2
O
3
DBC
Optional SMD Thermistor (NTC)
Very Low Stray Inductance Design for
High Speed Operation
V
CES
= 1200V
I
C
= 80A
Benefits
•
Optimized for Welding, UPS and SMPS
•
•
•
•
•
•
•
•
Applications
Rugged with UltraFast Performance
Benchmark Efficiency above 20KHz
Outstanding ZVS and Hard Switching
Operation
Low EMI, requires Less Snubbing
Excellent Current Sharing in Parallel
Operation
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal Resis
tance
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
I
I
CM
LM
Max
1200
@ T
C
= 22°C
@ T
C
= 104°C
80
40
160
160
@ T
C
= 105°C
21
160
± 20
2500
463
185
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
I
F
FM
V
GE
V
ISOL
P
D
V
W
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1
40MT120UHA, 40MT120UHTA
Bulletin I27194 03/05
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
(BR)CES
∆V
(BR)CES
/
∆T
J
V
CE(ON)
Min Typ Max Units Test Conditions
+1.1
3.36
4.53
3.88
5.35
-12
35
0.4
0.2
250
1.0
10
±250
3.59
4.91
4.10
5.68
6
V
V/°C
V
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 3mA (25-125°C)
=
=
=
=
=
=
=
=
=
=
=
15V, I
C
= 40A
15V, I
C
= 80A
15V, I
C
= 40A T
J
= 150°C
15V, I
C
= 80A T
J
= 150°C
V
GE
, I
C
= 500µA
V
GE
, I
C
= 1mA (25-125°C)
50V, I
C
= 40A, PW =
0V, V
CE
= 1200V, T
J
0V, V
CE
= 1200V, T
J
0V, V
CE
= 1200V, T
J
± 20V
80µs
= 25°C
= 125°C
= 150°C
Collector-to-Emitter Breakdown Voltage 1200
Temperature Coeff. of
Breakdown Voltage
Collector-to-Emitter Saturation Voltage
V
GE(th)
∆V
GE(th)
/
∆T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of
Threshold Voltage
Transconductance
Zero Gate Voltage Collector Current
4
V
GE
V
GE
V
GE
V
GE
V
V
CE
mV/°C V
CE
S
µA
mA
nA
V
CE
V
GE
V
GE
V
GE
V
GE
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min Typ Max Units Test Conditions
399
43
187
1142
1345
2487
1598
1618
3216
599
65
281
1713
2018
3731
2397
2427
4824
µJ
nC
I
C
= 40A
V
CC
= 600V
V
GE
= 15V
V
CC
= 600V, I
C
= 40A
V
GE
= 15V, R
g
= 5Ω, L = 200µH
T
J
= 25°C, Energy losses include tail
and diode reverse recovery
V
CC
= 600V, I
C
= 40A
V
GE
= 15V, R
g
= 5Ω, L = 200µH
T
J
= 125°C, Energy losses include tail
and diode reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
T
J
= 150°C, I
C
= 160A
V
CC
= 1000V, V
p
= 1200V
R
g
= 5Ω, V
GE
= +15V to 0V
T
J
= 150°C
V
CC
= 900V, V
p
= 1200V
R
g
= 5Ω, V
GE
= +15V to 0V
µJ
5521 8282
380
570
171
257
full square
pF
SCSOA
Short Circuit Safe Operating Area
10
µs
2
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40MT120UHA, 40MT120UHTA
Bulletin I27194 03/05
Diode Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
FM
Diode Forward Voltage Drop
Min
Typ Max Units Test Conditions
2.98
3.90
3.08
4.29
3.12
574
120
43
3.38
4.41
3.39
4.72
3.42
861
180
65
V
I
C
= 40A
I
C
= 80A
I
C
= 40A, T
J
= 125°C
I
C
= 80A, T
J
= 125°C
I
C
= 40A, T
J
= 150°C
V
GE
= 15V, R
g
= 5Ω, L = 200µH
V
CC
= 600V, I
C
= 40A
T
J
= 125°C
E
rec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
µJ
ns
A
Thermistor Specifications (40MT120UHTA only)
Parameters
R
0
(1)
β
(1)
(1) (2)
Min Typ
30
4000
(2)
Max Units Test Conditions
kΩ
K
T
0
= 25°C
T
0
= 25°C
T
1
= 85°C
Temperatures in Kelvin
Resistance
Sensitivity index of the thermistor
material
R
0
R
1
T
0
,T
1
are thermistor's temperatures
= exp
[
β
(
1
T
1
0
T
1
)]
,
Thermal- Mechanical Specifications
Parameters
T
J
T
STG
R
thJC
R
thCS
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case
Case-to-Sink
IGBT
Diode
Module
5.5
8
3 ± 10%
66
Nm
g (oz)
0.06
mm
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Min
- 40
- 40
Typ
Max
150
125
0.29
0.61
Units
°C
°C/ W
Clearance (
external shortest distance in air
between two terminals)
Creepage (
shortest distance along external
surface of the insulating material between 2 terminals
)
T
Wt
Mounting torque to heatsink
Weight
compound. Lubricated threads
(3)
(3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
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40MT120UHA, 40MT120UHTA
Bulletin I27194 03/05
100
600
500
400
PD (W)
80
60
IC (A)
300
200
40
20
100
0
0
0
20
40
60
80
100 120 140 160
T C (°C)
0
20
40
60
80
100 120 140 160
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
1000
100
100
10
IC (A)
10 µs
100 µs
IC (A)
10
1
1
10ms
0.1
DC
0.01
1
10
100
VCE (V)
1000
10000
10
100
1000
10000
VCE (V)
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
150°C
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
4
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40MT120UHA, 40MT120UHTA
Bulletin I27194 03/05
160
140
120
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
160
140
120
100
VGE
VGE
VGE
VGE
VGE
= 18V
= 15V
= 12V
= 10V
= 8.0V
80
60
40
20
0
0
2
4
6
VCE (V)
8
10
ICE (A)
80
60
40
20
0
0
2
4
6
VCE (V)
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
160
140
120
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
100
80
IF (A)
-40°C
25°C
125°C
80
60
40
20
0
0
2
4
6
VCE (V)
8
10
60
40
20
0
0.0
1.0
2.0
3.0
4.0
5.0
VF (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 125°C; tp = 80µs
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
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