Freescale Semiconductor
Technical Data
Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRF1570T1
Rev. 6, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
•
Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 10 dB
Efficiency — 50%
•
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Broadband - Full Power Across the Band: 135 - 175 MHz
400 - 470 MHz
•
Broadband Demonstration Amplifier Information Available Upon Request
•
200_C Capable Plastic Package
•
Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1570T1
MRF1570FT1
470 MHz, 70 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366 - 04, STYLE 1
TO - 272 - 8 WRAP
PLASTIC
MRF1570T1
ARCHIVE INFORMATION
CASE 1366A - 02, STYLE 1
TO - 272 - 8
PLASTIC
MRF1570FT1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
+0.5, +40
±
20
165
0.5
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.75
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M2 (Minimum)
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
1
Package Peak Temperature
260
Unit
°C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF1570T1 MRF1570FT1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 0.8 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
C
iss
C
oss
C
rss
—
—
—
—
—
—
500
250
35
pF
V
GS(th)
V
DS(on)
1.0
—
—
—
3
1
Vdc
Vdc
I
DSS
—
—
1
μA
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
RF Characteristics
(In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 70 W, I
DQ
= 800 mA)
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 70 W, I
DQ
= 800 mA)
f = 470 MHz
f = 470 MHz
pF
G
ps
η
dB
10
50
—
—
—
%
—
MRF1570T1 MRF1570FT1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
pF
V
GG
C14
C13
C12
B1
+
C11
R1
Z2
L1
C4
Z4
L3
C6
Z6
R3
Z8
Z10
Z12
C20
DUT
C21
R4
Z3
L2
C5
Z5
L4
C7
B2
C19
C18
C17
+
C16
Z7
C9
R2
Z9
Z11
Z13
Z15
L10
C23
C10
C38
C37
L9
Z14
C22
B3
B4
C36
C35
C34
+ V
DD
C33
Z16
C24
L5
C26
L7
C28
Z18
C30
RF
OUTPUT
C32
RF
INPUT
C1 Z1
C2
C3
C8
Z20
C25
Z17
C27
L6
L8
C29
B5
Z22
Z21
Z19
C31
ARCHIVE INFORMATION
V
GG
C15
C44
C43
B6
C42
C41
C40
+ V
DD
C39
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products
C1, C32, C37, C43
270 pF, 100 mil Chip Capacitors
C2, C20, C21
33 pF, 100 mil Chip Capacitors
C3
18 pF, 100 mil Chip Capacitor
C4, C5
30 pF, 100 mil Chip Capacitors
C6, C7
180 pF, 100 mil Chip Capacitors
C8, C9
150 pF, 100 mil Chip Capacitors
C10, C15
300 pF, 100 mil Chip Capacitors
C11, C16, C33, C39 10
μF,
50 V Electrolytic Capacitors
C12, C17, C34, C40 0.1
μF,
100 mil Chip Capacitors
C13, C18, C35, C41 1000 pF, 100 mil Chip Capacitors
C14, C19, C36, C42 470 pF, 100 mil Chip Capacitors
C22, C23
110 pF, 100 mil Chip Capacitors
C24, C25
68 pF, 100 mil Chip Capacitors
C26, C27
120 pF, 100 mil Chip Capacitors
C28, C29
24 pF, 100 mil Chip Capacitors
C30, C31
27 pF, 100 mil Chip Capacitors
C38, C44
240 pF, 100 mil Chip Capacitors
L1, L2
17.5 nH, 6 Turn Inductors, Coilcraft
L3, L4
L5, L6, L7, L8
L9, L10
N1, N2
R1, R2
R3, R4
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9, Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22
Board
5 nH, 2 Turn Inductors, Coilcraft
1 Turn, #18 AWG, 0.33″ ID Inductors
3 Turn, #16 AWG, 0.165″ ID Inductors
Type N Flange Mounts
25.5
Ω
Chip Resistors (1206)
9.3
Ω
Chip Resistors (1206)
0.32″ x 0.080″ Microstrip
0.46″ x 0.080″ Microstrip
0.34″ x 0.080″ Microstrip
0.45″ x 0.080″ Microstrip
0.28″ x 0.240″ Microstrip
0.39″ x 0.080″ Microstrip
0.27″ x 0.080″ Microstrip
0.25″ x 0.080″ Microstrip
0.29″ x 0.080″ Microstrip
0.14″ x 0.080″ Microstrip
0.32″ x 0.080″ Microstrip
31 mil Glass Teflon
®
Figure 1. 135 - 175 MHz Broadband Test Circuit Schematic
MRF1570T1 MRF1570FT1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
V
GG
C11
GND
B1
C12 C13 C14
C2
C4
L1
L3
C38
C6
C10
R1
C8
R3
R4
C9
L9
C22
C23
L10
C44
C37
C20 C24
C26
C27
C21 C25
C43
L6
L5
B3
B4
C33
V
DD
GND
C28 C36 C35 C34
L7
C30
C31
C32
C1
C3
C5
L4
L2
C7
C17 C18 C19
B2
C16
R2
C15
L8
C29 C42 C41 C40
B5
B6
C39
ARCHIVE INFORMATION
MRF1570T1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout
TYPICAL CHARACTERISTICS, 135 - 175 MHz
100
IRL, INPUT RETURN LOSS (dB)
80
135 MHz
60
40
150 MHz
20
0
V
DD
= 12.5 Vdc
0
1
2
3
4
5
6
175 MHz
0
Pout , OUTPUT POWER (WATTS)
−5
135 MHz
−10
175 MHz
155 MHz
−15
V
DD
= 12.5 Vdc
−20
10
20
30
40
50
60
70
80
90
P
in
, INPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
Figure 4. Input Return Loss versus Output Power
MRF1570T1 MRF1570FT1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS, 135 - 175 MHz
18
17
G ps , POWER GAIN (dB)
16
15
14
13
12
10
155 MHz
175 MHz
135 MHz
V
DD
= 12.5 Vdc
η
, DRAIN EFFICIENCY (%)
60
50
40
30
V
DD
= 12.5 Vdc
20
30
40
50
60
70
80
90
20
10
20
30
40
50
60
70
80
90
70
155 MHz
175 MHz
135 MHz
ARCHIVE INFORMATION
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
Figure 5. Gain versus Output Power
Figure 6. Drain Efficiency versus Output Power
90
100
80
60
40
20
0
400
80
135 MHz
155 MHz
175 MHz
η
, DRAIN EFFICIENCY (%)
155 MHz
175 MHz
135 MHz
70
60
V
DD
= 12.5 Vdc
P
in
= 36 dBm
600
800
1000
1200
1400
1600
V
DD
= 12.5 Vdc
P
in
= 36 dBm
600
800
1000
1200
1400
1600
50
400
I
DQ
, BIASING CURRENT (mA)
I
DQ
, BIASING CURRENT (mA)
Figure 7. Output Power versus Biasing Current
Figure 8. Drain Efficiency versus Biasing Current
100
Pout , OUTPUT POWER (WATTS)
80
60
40
20
0
10
100
80
60
40
20
0
155 MHz
175 MHz
135 MHz
135 MHz
175 MHz
155 MHz
η
, DRAIN EFFICIENCY (%)
P
in
= 36 dBm
I
DQ
= 800 mA
11
12
13
14
15
P
in
= 36 dBm
I
DQ
= 800 mA
10
11
12
13
14
15
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
Figure 10. Drain Efficiency versus Supply Voltage
MRF1570T1 MRF1570FT1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
Pout , OUTPUT POWER (WATTS)
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