UVPROM, 8KX8, 55ns, CMOS, CDFP24, WINDOWED, CERPACK-24
| 参数名称 | 属性值 |
| 厂商名称 | Cypress(赛普拉斯) |
| 零件包装代码 | DFP |
| 包装说明 | WDFP, |
| 针数 | 24 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最长访问时间 | 55 ns |
| 其他特性 | POWER SWITCHED PROM |
| JESD-30 代码 | R-GDFP-F24 |
| JESD-609代码 | e0 |
| 长度 | 15.367 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | UVPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 24 |
| 字数 | 8192 words |
| 字数代码 | 8000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 8KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | WDFP |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK, WINDOW |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 2.54 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | FLAT |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 宽度 | 9.652 mm |
| Base Number Matches | 1 |
| 5962-8751506KA | 5962-8751505KA | 5962-87515063A | 5962-87515053A | |
|---|---|---|---|---|
| 描述 | UVPROM, 8KX8, 55ns, CMOS, CDFP24, WINDOWED, CERPACK-24 | UVPROM, 8KX8, 45ns, CMOS, CDFP24, WINDOWED, CERPACK-24 | UVPROM, 8KX8, 55ns, CMOS, CQCC28, WINDOWED, CERAMIC, LCC-28 | UVPROM, 8KX8, 45ns, CMOS, CQCC28, WINDOWED, CERAMIC, LCC-28 |
| 零件包装代码 | DFP | DFP | QLCC | QLCC |
| 包装说明 | WDFP, | WDFP, | WQCCN, | WINDOWED, CERAMIC, LCC-28 |
| 针数 | 24 | 24 | 28 | 28 |
| Reach Compliance Code | unknown | unknown | unknown | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 55 ns | 45 ns | 55 ns | 45 ns |
| 其他特性 | POWER SWITCHED PROM | POWER SWITCHED PROM | POWER SWITCHED PROM | POWER SWITCHED PROM |
| JESD-30 代码 | R-GDFP-F24 | R-GDFP-F24 | S-CQCC-N28 | S-CQCC-N28 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 长度 | 15.367 mm | 15.367 mm | 11.43 mm | 11.43 mm |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | UVPROM | UVPROM | UVPROM | UVPROM |
| 内存宽度 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | 24 | 28 | 28 |
| 字数 | 8192 words | 8192 words | 8192 words | 8192 words |
| 字数代码 | 8000 | 8000 | 8000 | 8000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | WDFP | WDFP | WQCCN | WQCCN |
| 封装形状 | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE |
| 封装形式 | FLATPACK, WINDOW | FLATPACK, WINDOW | CHIP CARRIER, WINDOW | CHIP CARRIER, WINDOW |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 2.54 mm | 2.54 mm | 2.8956 mm | 2.8956 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) - hot dipped |
| 端子形式 | FLAT | FLAT | NO LEAD | NO LEAD |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | QUAD | QUAD |
| 宽度 | 9.652 mm | 9.652 mm | 11.43 mm | 11.43 mm |
| 厂商名称 | Cypress(赛普拉斯) | - | Cypress(赛普拉斯) | Cypress(赛普拉斯) |
| Base Number Matches | 1 | 1 | 1 | - |
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