MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
(a)
0.2+/-0.05
0.65+/-0.2
(c)
(b)
7.0+/-0.2
(b)
8.0+/-0.2
6.2+/-0.2
4.2+/-0.2
5.6+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
DESCRIPTION
RD05MMP1 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
(3.6)
OUTLINE DRAWING
(d)
FEATURES
•High power gain:
Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
•High Efficiency: 43%min. (941MHz)
•No gate protection diode
INDEX MARK
[Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
APPLICATION
For output stage of high power amplifiers in
941MHz band mobile radio sets.
SIDE VIEW
Standoff = max 0.05
0.7+/-0.1
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
Ω
-
-
-
Junction to case
RATINGS
40
-5 to +10
73
1.4
3
150
-40 to +125
1.7
UNIT
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout
ηD
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=941MHz , V
DD
=7.2V
Pin=0.7W,Idq=1.0A
V
DD
=9.5V,Po=5.5W(Pin Control)
f=941MHz,Idq=1.0A,Zg=50
Ω
Load VSWR=20:1(All Phase)
MIN
-
-
0.5
5.5
43
LIMITS
TYP MAX.
-
10
-
1
-
2.5
6
-
-
-
No destroy
UNIT
uA
uA
V
W
%
-
VSWRT Load VSWR tolerance
Note : Above parameters , ratings , limits and conditions are subject to change.
RD05MMP1
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
Vgs-Ids CHARACTERISTICS
8
Ta=+25°C
Vds=10V
Ids
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
60
CHANNEL DISSIPATION Pch(W
50
40
30
20
10
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(deg:C.)
200
0
0
1
2
3
Vgs(V)
4
5
On PCB with Termal sheet
and Heat-sink
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
*PCB: Glass epoxy (t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(0.5)
6
Ids(A),gm(S)
4
GM
2
Vds-Ids CHARACTERISTICS
9
8
7
6
Ids(A)
5
4
3
2
1
0
0
1
2
3
4
5
Vds(V)
6
7
8
9
Vgs=3.0V
Vgs=3.5V
Vgs=4.0V
Ta=+25°C
Vgs=5.0V
Vds VS. Ciss CHARACTERISTICS
160
140
Vgs=4.5V
Ta=+25°C
f=1MHz
120
Ciss(pF)
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS
160
140
120
Coss(pF)
Crss(pF)
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
RD05MMP1
MITSUBISHI ELECTRIC
2/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
Pin-Po CHARACTERISTICS @f=941MHz
80
Ta=25°C
f=941MHz
Vdd=7.2V
Idq=1.0A
ηd
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=941MHz
20
40
Po(dBm) , Gp(dB) , Idd(A)
Ta=+25°C
f=941MHz
Vdd=7.2V
Idq=1.0A
Po
80
15
Pout(W) , Idd(A)
60
ηd(%)
η½
70
60
50
30
20
Gp
40
10
Po
40
30
10
Ｉ½½
20
5
Idd
20
10
0
1.5
0
5
10
15
20
25
Pin(dBm)
30
35
0
0
0.0
0.5
Pin(W)
1.0
Vdd-Po CHARACTERISTICS @f=941MHz
10
Ta=25°C
f=941MHz
Pin=0.7W
Idq=1.0A
Zg=ZI=50 ohm
Po
Vgs-Ids CHARACTORISTICS 2
5
8
Vds=10V
Tc=-25~+75°C
6
Ids(A),gm(S)
-25°C
+25°C
+75°C
8
6
4
3
Po(W)
Idd(A)
4
4
2
Idd
2
1
2
0
4
6
8
Vdd(V)
10
12
0
0
0
1
2
Vgs(V)
3
4
5
RD05MMP1
MITSUBISHI ELECTRIC
3/7
1st Jun. 2006
ηd(%)
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
Vdd
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TEST CIRCUIT (f=941MHz)
Vgg
C1
W 19mm
12pF
7.5mm
RD05MMP1
941MHz
1.5mm
1.0mm 1.0mm 1.0mm
120pF
6pF
12pF
10pF
7pF
10pF
19mm W
C2
22uF,50V
4.7k Ohm
27.5mm
RF-in
L1
13mm
23.0mm
RF-out
120pF
4pF
Note:Board material= glass-Epoxy Substrate
Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm
W:Line width=1.0mm
L1:24.4nH, Enameled wire 5Turns,D:0.23mm,1.37mm(outside diameter)
C1,C2:100pF,1000pF in parallel
RD05MMP1
MITSUBISHI ELECTRIC
4/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
S22
(ang)
-3.4
-5.0
-6.5
-6.6
-7.1
-8.5
-8.9
-8.7
-8.2
-3.2
-4.3
-3.6
-0.8
2.0
7.3
10.5
16.6
19.9
25.6
30.6
35.9
40.4
46.3
49.2
51.0
57.5
58.5
60.4
62.2
67.1
67.9
68.4
67.0
64.2
52.9
51.8
61.8
(mag)
0.806
0.817
0.810
0.817
0.822
0.835
0.841
0.838
0.840
0.849
0.858
0.868
0.869
0.868
0.874
0.880
0.886
0.893
0.893
0.897
0.901
0.908
0.911
0.909
0.915
0.916
0.917
0.921
0.925
0.924
0.923
0.921
0.922
0.919
0.906
0.920
0.933
(ang)
-171.5
-172.9
-174.2
-174.7
-175.0
-175.1
-175.3
-175.8
-176.2
-176.4
-176.8
-177.0
-177.4
-177.5
-177.8
-178.2
-178.7
-179.1
-179.0
-179.4
-179.9
179.6
179.2
179.0
178.6
178.4
177.9
177.4
177.0
176.7
176.6
176.3
175.5
175.0
175.4
176.6
176.0
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz]
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
S11
(mag)
0.841
0.845
0.846
0.848
0.848
0.852
0.858
0.861
0.866
0.872
0.877
0.878
0.880
0.886
0.891
0.897
0.900
0.904
0.905
0.907
0.913
0.918
0.920
0.920
0.925
0.925
0.927
0.931
0.929
0.936
0.936
0.935
0.935
0.933
0.938
0.943
0.943
(ang)
-169.5
-171.5
-172.4
-173.3
-173.7
-174.5
-174.9
-175.2
-175.3
-175.5
-175.5
-176.2
-176.6
-177.1
-177.2
-177.2
-177.3
-177.6
-178.1
-178.6
-178.9
-178.9
-178.9
-179.1
-179.5
179.8
179.5
179.2
179.3
179.2
179.0
178.5
178.1
177.9
177.8
177.8
177.5
(mag)
7.706
6.148
5.024
4.240
3.669
3.227
2.856
2.543
2.279
2.068
1.886
1.735
1.584
1.456
1.343
1.249
1.164
1.086
1.010
0.945
0.889
0.833
0.786
0.741
0.698
0.660
0.625
0.595
0.565
0.537
0.513
0.488
0.469
0.446
0.426
0.404
0.388
S21
(ang)
82.9
78.7
75.0
72.0
69.4
66.5
63.6
60.8
58.6
56.5
54.1
51.5
49.3
47.4
45.9
44.1
42.2
40.3
38.7
37.2
35.8
34.6
33.2
31.9
30.6
29.4
28.3
27.1
26.3
25.4
24.6
23.6
22.6
21.7
20.3
20.3
19.9
(mag)
0.020
0.020
0.019
0.018
0.017
0.017
0.017
0.016
0.015
0.014
0.013
0.013
0.012
0.011
0.011
0.011
0.010
0.010
0.010
0.010
0.011
0.011
0.011
0.012
0.012
0.013
0.013
0.014
0.015
0.016
0.017
0.019
0.020
0.023
0.024
0.019
0.019
S12
RD05MMP1
MITSUBISHI ELECTRIC
5/7
1st Jun. 2006
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