MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA60H1317M
BLOCK DIAGRAM
RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H1317M is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>60W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA60H1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA60H1317M-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA60H1317M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H1317M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=135-175MHz,
Z
G
=Z
L
=50Ω
RATING
17
6
100
75
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
135
60
TYP
MAX
175
UNIT
MHz
W
%
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
40
-25
3:1
1
dBc
—
mA
—
—
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<70W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=60W (V
GG
control),
Load VSWR=8:1
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H1317M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H1317M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
90
OUTPUT POWER P
out
(W)
80
INPUT VSWR
ρ
in
(-)
70
60
50
40
30
20
10
0
135
ρ
in
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
P
out
2
nd
, 3 HARMONICS versus FREQUENCY
-20
HARMONICS (dBc)
-30
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
rd
90
80
70
TOTAL EFFICIENCY
η
T
(%)
60
50
40
30
20
10
0
175
η
T
-40
-50
3
rd
-60
-70
135
145
155
165
FREQUENCY f(MHz)
145
155
165
FREQUENCY f(MHz)
175
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
60
50
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
f=135MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
60
50
40
30
20
10
0
-10
-5
0
5
10
f=155MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
14
12
10
8
6
4
2
0
14
12
10
8
I
DD
6
4
2
0
20
15
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
60
50
40
30
20
10
0
-10
-5
0
5
10
f=175MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
14
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
I
DD
15
20
INPUT POWER P
in
(dBm)
RA60H1317M
MITSUBISHI ELECTRIC
3/8
DRAIN CURRENT
I
DD
(A)
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H1317M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
f=135MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
DRAIN CURRENT I
DD
(A)
f=155MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
16
14
I
DD
16
14
12
I
DD
12
10
8
6
4
2
0
10
8
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
DD
f=175MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
16
14
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
RA60H1317M
MITSUBISHI ELECTRIC
4/8
DRAIN CURRENT I
DD
(A)
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H1317M
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
60.0 ±0.5
51.5 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(50.4)
2.3 ±0.3
4.0 ±0.3
(9.88)
RA60H1317M
MITSUBISHI ELECTRIC
5/8
17.0 ±0.5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
24 Jan 2006
FPGA/CPLD
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